Andrés Godoy Medina

Administrative data

Full member researcher

  • Position in UGR: Professor
    Department where s/he teaches: Electrónica y Tecnología de Computadores
    Research group: TIC-250

Contributions and research experience

Publications in ISI SCI

  • Confinement orientation effects in S/D tunneling
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 128 48 53 2017
  • Impact of non uniform strain configuration on transport properties for FD14+devices
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 115 232 236 2016
  • Mobility and Capacitance Comparison in Scaled InGaAs Versus Si Trigate MOSFETs
    Author-s: Marin, Enrique G.; Ruiz, Francisco G.; Godoy, Andres; Tienda-Luna, Isabel M.; Gamiz, Francisco
    Source: IEEE ELECTRON DEVICE LETTERS 36 2 114 116 2015
  • Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility
    Author-s: Marin, Enrique G.; Ruiz, Francisco G.; Godoy, Andres; Maria Tienda-Luna, Isabel; Martinez-Blanque, Celso; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 62 1 224 227 2015
  • The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires
    Author-s: Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Gamiz, F.
    Source: APPLIED PHYSICS LETTERS 106 2 2015
  • Selected Full-Length Papers from the EUROSOI 2011 Conference Foreword
    Author-s: Godoy, Andres; Gamiz, Francisco
    Source: SOLID-STATE ELECTRONICS 70 1 2 2012
  • Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
    Author-s: Sampedro, C.; Gamiz, F.; Donetti, L.; Godoy, A.
    Source: SOLID-STATE ELECTRONICS 70 101 105 2012
  • Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors
    Author-s: Jimenez Tejada, Juan A.; Luque Rodriguez, Abraham; Godoy, Andres; Rodriguez-Bolivar, Salvador; Lopez Villanueva, Juan A.; Marinov, Ognian; Deen, M. Jamal
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 59 2 459 467 2012
  • Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs
    Author-s: Tienda-Luna, Isabel M.; Garcia Ruiz, Francisco J.; Godoy, Andres; Biel, Blanca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 10 3350 3357 2011
  • An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs
    Author-s: Moreno Perez, Enrique; Roldan Aranda, Juan Bautista; Garcia Ruiz, Francisco J.; Barrera Rosillo, Domingo; Ibanez Perez, Maria Jose; Godoy, Andres; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 9 2854 2861 2011
  • Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors (vol 57, pg 2405, 2010)
    Author-s: Jimenez, David; Miranda, Enrique; Godoy, Andres
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 8 2818 2818 2011
  • Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
    Author-s: Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Sampedro, C.; Gamiz, F.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 59 1 62 67 6th Workshop of the Thematic Network on Silicon on JAN 25-27, 2010 Grenoble, Grenoble 2011
  • An analytical model for square GAA MOSFETs including quantum effects
    Author-s: Moreno, E.; Roldan, J. B.; Ruiz, F. G.; Barrera, D.; Godoy, A.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 54 11 1463 1469 2010
  • An Analytical I-V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
    Author-s: Roldan, J. B.; Gamiz, Francisco; Jimenez-Molinos, F.; Sampedro, Carlos; Godoy, Andres; Garcia Ruiz, Francisco J.; Rodriguez, Noel
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 11 2925 2933 2010
  • Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors
    Author-s: Jimenez, David; Miranda, Enrique; Godoy, Andres
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 10 2405 2409 2010
  • A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETs
    Author-s: Garcia Ruiz, Francisco J.; Maria Tienda-Luna, Isabel; Godoy, Andres; Donetti, Luca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 10 2477 2483 2010
  • Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Valin, R.; Garcia-Loureiro, A.; Ruiz, F. G.
    Source: SOLID-STATE ELECTRONICS 54 2 131 136 5th Workshop of the Thematic-Network-on-Silicon-on JAN 19-21, 2009 Chalmers Univ Technol, Chalmers Univ Technol, Chalmers Univ Technol 2010
  • Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel; Godoy, Andres
    Source: IEEE ELECTRON DEVICE LETTERS 30 12 1338 1340 2009
  • Non-metallic effects in silicided gate MOSFETs
    Author-s: Rodriguez, Noel; Gamiz, Francisco; Clerc, Raphael; Sampedro, Carlos; Godoy, Andres; Ghibaudo, Gerard
    Source: SOLID-STATE ELECTRONICS 53 12 1313 1317 10th International Conference on Ultimate Integrat MAR, 2009 Aachen, Aachen 2009
  • Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-kappa Insulators
    Author-s: Garcia Ruiz, Francisco J.; Maria Tienda-Luna, Isabel; Godoy, Andres; Donetti, Luca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 56 11 2711 2719 2009
  • Monte Carlo simulation of nanoelectronic devices
    Author-s: Gamiz, F.; Godoy, A.; Donetti, L.; Sampedro, C.; Roldan, J. B.; Ruiz, F.; Tienda, I.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 8 3-4 174 191 2009
  • Size Effects and Performance Assessment in Nanoscale Multigate MOSFET Structures
    Author-s: Mohamed, Mohamed; Aksamija, Zlatan; Godoy, Andres; Martin, Pierre; Hahm, Hyung-Seok; Lee, Wonsok; Lee, Kyu Il; Ravaiolil, Umberto
    Source: JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 6 8 1927 1936 2009
  • Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-kappa insulators
    Author-s: Tienda-Luna, I. M.; Ruiz, F. J. Garcia; Donetti, L.; Godoy, A.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 52 12 1854 1860 2008
  • Quantum-corrected Monte Carlo simulation of double gate silicon on insulator transistors
    Author-s: Sampedro, Carlos; Gamiz, Francisco; Godoy, Andres
    Source: JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 5 6 1046 1057 2008
  • A low-frequency noise model for four-gate field-effect transistors
    Author-s: Jimenez Tejada, Juan Antonio; Rodriguez, Abraham Luque; Godoy, Andres; Villanueva, Juan A. Lopez; Gomez-Campos, Francisco M.; Rodriguez-Bolivar, Salvador
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 55 3 896 903 2008
  • Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
    Author-s: Roldan, J. B.; Godoy, Andres; Gamiz, Francisco; Balaguer, M.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 55 1 411 416 2008
  • A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
    Author-s: Ruiz, Francisco J. Garcia; Godoy, Andres; Gamiz, Francisco; Sampedro, Carlos; Donetti, Luca
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 12 3369 3377 2007
  • Calculation of the phonon-limited mobility in silicon gate all-around MOSFETs
    Author-s: Godoy, A.; Ruiz, F.; Sampedro, C.; Gamiz, F.; Ravaioli, U.
    Source: SOLID-STATE ELECTRONICS 51 9 1211 1215 3rd Workshop of the Thematic-Network-on-Silicon-on JAN 24-26, 2007 Leuven, Leuven 2007
  • The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures
    Author-s: Sampedro-Matarin, Carlos; Gamiz, Francisco; Godoy, Andres; Garcia Ruiz, Francisco J.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 53 11 2703 2710 2006
  • Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
    Author-s: Donetti, L.; Gamiz, F.; Roldan, J. B.; Godoy, A.
    Source: JOURNAL OF APPLIED PHYSICS 100 1 -1 -1 2006
  • A comprehensive study of carrier velocity modulation in DGSOI transistors
    Author-s: Sampedro, C; Gamiz, F; Godoy, A; Prunnila, M; Ahopelto, J
    Source: SOLID-STATE ELECTRONICS 49 9 1504 1509 1st EUROSOI Workshop JAN 19-21, 2005 Granada, Granada 2005
  • Effects of nonparabolic bands in quantum wires
    Author-s: Godoy, A; Yang, ZC; Ravaioli, U; Gamiz, F
    Source: JOURNAL OF APPLIED PHYSICS 98 1 -1 -1 2005
  • Double gate silicon on insulator transistors. A Monte Carlo study
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Carceller, JE; Cartujo, P
    Source: SOLID-STATE ELECTRONICS 48 6 937 945 2004
  • Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Roldan, JB; Carceller, JE; Cartujo, P
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 18 11 927 937 2003
  • Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Cartujo-Cassinello, P; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 94 9 5732 5741 2003
  • Generation-recombination noise in highly asymmetrical p-n junctions
    Author-s: Tejada, JAJ; Godoy, A; Palma, A; Villanueva, JAL
    Source: JOURNAL OF APPLIED PHYSICS 92 1 320 329 2002
  • Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility
    Author-s: Gamiz, F; Roldan, JB; Godoy, A
    Source: APPLIED PHYSICS LETTERS 80 22 4160 4162 2002
  • Temperature dependence of generation-recombination noise in p-n junctions
    Author-s: Tejada, JAJ; Godoy, A; Palma, A; Cartujo, P
    Source: JOURNAL DE PHYSIQUE IV 12 PR3 71 74 5th European Workshop on Low Temperature Electroni JUN 19-21, 2002 GRENOBLE, GRENOBLE 2002
  • Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P; Godoy, A
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 48 10 2447 2449 2001
  • A simple subthreshold swing model for short channel MOSFETs
    Author-s: Godoy, A; Lopez-Villanueva, JA; Jimenez-Tejada, JA; Palma, A; Gamiz, F
    Source: SOLID-STATE ELECTRONICS 45 3 391 397 2001
  • Optimum design in a JFET for minimum generation-recombination noise
    Author-s: Godoy, A; Jimenez-Tejada, JA; Palma, A; Carceller, JE
    Source: MICROELECTRONICS RELIABILITY 40 11 1965 1968 2000
  • Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors
    Author-s: Godoy, A; Gamiz, F; Palma, A; JimenezTejada, JA; Banqueri, J; LopezVillanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 82 9 4621 4628 1997
  • Influence of the doping profile and deep level trap characteristics on generation-recombination noise
    Author-s: Godoy, A; JimenezTejada, JA; Palma, A; Cartujo, P
    Source: JOURNAL OF APPLIED PHYSICS 82 7 3351 3357 1997
  • Anomalous behaviour of the electric field in highly-compensated non-uniform semiconductors at low temperatures
    Author-s: JimenezTejada, JA; Palma, A; Godoy, A; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 6 C3 99 103 2nd European Workshop on Low Temperature Electroni JUN 26-28, 1996 LOUVAIN, LOUVAIN 1996
  • Capture process by shallow donors in silicon at low temperatures
    Author-s: Palma, A; JimenezTejada, JA; Godoy, A; Cartujo, P
    Source: JOURNAL DE PHYSIQUE IV 6 C3 105 110 2nd European Workshop on Low Temperature Electroni JUN 26-28, 1996 LOUVAIN, LOUVAIN 1996
  • MONTE-CARLO SIMULATION OF MULTIPHONON CAPTURE MECHANISM BY DEEP NEUTRAL IMPURITIES IN SI IN THE PRESENCE OF AN ELECTRIC-FIELD
    Author-s: PALMA, A; JIMENEZTEJADA, JA; GODOY, A; MELCHOR, I; CARTUJO, P
    Source: JOURNAL OF APPLIED PHYSICS 78 9 5448 5453 1995
  • Surface roughness scattering model for arbitrarily oriented silicon nanowires
    Author-s: Tienda-Luna, Isabel M.; Ruiz, F. G.; Godoy, A.; Biel, B.; Gamiz, F.
    Source: JOURNAL OF APPLIED PHYSICS 110 8 -1 -1 2011
  • Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions
    Author-s: Tejada, JAJ; Godoy, A; Palma, A; Cartujo, P
    Source: JOURNAL OF APPLIED PHYSICS 90 8 3998 4006 2001
  • The effect of surface roughness scattering on hole mobility in double gate silicon-on-insulator devices
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel; Godoy, Andres; Sampedro, Carlos
    Source: JOURNAL OF APPLIED PHYSICS 106 2 -1 -1 2009
  • Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors
    Author-s: Sampedro, C; Gamiz, F; Godoy, A; Prunnila, M; Ahopelto, J
    Source: APPLIED PHYSICS LETTERS 86 20 -1 -1 2005
  • A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations
    Author-s: Lazaro, A.; Nae, B.; Iniguez, B.; Garcia, F.; Tienda-Luna, I. M.; Godoy, A.
    Source: JOURNAL OF APPLIED PHYSICS 103 8 -1 -1 2008
  • Effects of oxygen related defects on the electrical and thermal behavior of a n( )-p junction
    Author-s: Tejada, JAJ; Godoy, A; Carceller, JE; Villanueva, JAL
    Source: JOURNAL OF APPLIED PHYSICS 95 2 561 570 2004
  • INFLUENCE OF THE POSITION OF DEEP LEVELS ON GENERATION-RECOMBINATION NOISE
    Author-s: GODOY, A; PALMA, A; JIMENEZTEJADA, JA; CARCELLER, JE
    Source: APPLIED PHYSICS LETTERS 67 24 3581 3583 1995
  • Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
    Author-s: Palma, A; Godoy, A; JimenezTejada, JA; Carceller, JE; LopezVillanueva, JA
    Source: PHYSICAL REVIEW B 56 15 9565 9574 1997
  • MONTE-CARLO STUDY OF THE STATISTICS OF ELECTRON-CAPTURE BY SHALLOW DONORS IN SILICON AT LOW-TEMPERATURES
    Author-s: PALMA, A; JIMENEZTEJADA, JA; GODOY, A; LOPEZVILLANUEVA, JA; CARCELLER, JE
    Source: PHYSICAL REVIEW B 51 20 14147 14151 1995
  • Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors
    Author-s: Godoy, A; Gamiz, F; Palma, A; JimenezTejada, JA; Carceller, JE
    Source: APPLIED PHYSICS LETTERS 70 16 2153 2155 1997
  • SELECTED PAPERS FROM THE ESSDERC 2010 CONFERENCE Foreword
    Author-s: Gamiz, Francisco; Godoy, Andres
    Source: SOLID-STATE ELECTRONICS 65-66 1 1 2011
  • Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Valin, R.; Garcia-Loureiro, A.; Rodriguez, N.; Tienda-Luna, I. M.; Martinez-Carricondo, F.; Biel, B.
    Source: SOLID-STATE ELECTRONICS 65-66 88 93 40th European Solid-State Device Research Conferen SEP 14-16, 2010 Seville, Seville 2011
  • Localization and quantification of noise sources in four-gate field-effect-transistors
    Author-s: Luque Rodriguez, A.; Jimenez Tejada, J. A.; Godoy, A.; Lopez Villanueva, J. A.; Gomez-Campos, F. M.; Rodriguez-Bolivar, S.
    Source: INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS 23 4-5 285 300 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2010

Conferences in ISI CPCI-Science

  • Confinement Orientation Effects in S/D tunneling
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 100 103 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • On the influence of the back-gate bias on InGaAs Trigate MOSFETs
    Author-s: Marin, Enrique G.; Ruiz, Francisco G.; Godoy, Andres; Gonzalez-Medina, Jose M.; Tienda-Luna, I. M.; Toral, Alejandro; Gamiz, Francisco
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 230 233 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • Multi-Subband Ensemble Monte Carlo Study of Band-to-Band Tunneling in Silicon-based TFETs
    Author-s: Medina-Bailon, C.; Sampedro, C.; Padilla, J. L.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: 2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) 253 256 International Conference on Simulation of Semicond SEP 06-08, 2016 Nuremberg, GERMANY 2016
  • Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors
    Author-s: Luque Rodriguez, A.; Jimenez Tejada, J. A.; Lopez Villanueva, J. A.; Godoy, A.; Lara Bullejos, P.; Gomez-Campos, M.
    Source: NOISE AND FLUCTUATIONS 1129 585 588 20th International Conference on Noise and Fluctua JUN 14-19, 2009 Pisa, Pisa 2009
  • Fully self-consistent k . p solver and Monte Carlo simulator for hole inversion layers
    Author-s: Donetti, Luca; Gamiz, Francisco; Godoy, Andres; Rodriguez, Noel
    Source: ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 254 257 38th European Solid-State Device Research Conferen SEP 15-19, 2008 Edinburgh, Edinburgh 2008
  • Electron transport in silicon-on-insulator nanodevices
    Author-s: Gamiz, F.; Godoy, A.; Sampedro, C.
    Source: Nanoscaled Semiconductor-on-Insulator Structures and Devices 303 322 NATO Advanced Research Workshop on Nanoscaled Semi OCT 15-19, 2006 Big Yalta, Big Yalta 2007
  • A model for the generation recombination noise in junction field effect structures: application to four-gate transistors
    Author-s: Tejada, J. A. Jimenez; Rodriguez, A. Luque; Godoy, A.
    Source: Noise and Fluctuations 922 105 110 19th International Conference on Noise and Fluctua SEP 09-14, 2007 Tokyo, Tokyo 2007
  • Charge transport in nanoscaled silicon-on-insulator devices - art. no. 65910C
    Author-s: Garniz, Francisco; Godoy, Andres; Sampedro, Carlos
    Source: Nanotechnology III 6591 5910 5910 Conference on Nanotechnology III MAY 02-04, 2007 Maspalomas, Maspalomas 2007
  • Electron transport in silicon inversion slabs of nanometric thickness
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Sampedro, C
    Source: Nanotechnology II 5838 199 207 Conference on Nanotechnology II MAY 09-11, 2005 Seville, Seville 2005
  • Effects of oxygen-related traps in silicon on the generation-recombination noise
    Author-s: Tejada, JAJ; Villanueva, JAL; Godoy, A; Carceller, JE; Gomez-Campo, FM; Rodriguez-Bolivar, S
    Source: Noise and Fluctuations 780 717 720 18th International Conference on Noise and Fluctua SEP 19-23, 2005 Salamanca, Salamanca 2005

Book chapters in ISI

  • Effects of deviations in the cross-section of square Nanowires
    Author-s: Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Donetti, L.; Gamiz, F.
    Source: 2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) 97 100 14th International Workshop on Computational Elect OCT 26-29, 2010 Pisa, Pisa 2010
  • Quantization Effects in Silicided and Metal Gate MOSFETs.
    Author-s: Rodriguez, N.; Gamiz, F.; Clerc, R.; Sampedro, C.; Godoy, A.; Ghibaudo, G.
    Source: ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON 103 106 10th International Conference on Ultimate Integrat MAR 18-20, 2009 Aachen, Aachen 2009
  • A new inversion charge centroid model for surrounding gate transistors with HfO(2) as gate insulator
    Author-s: Balaguer, M.; Roldan, J. B.; Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Gamiz, F.; Sampedro, C.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 104 107 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Effect of traps in the performance of Four Gate Transistors
    Author-s: Luque Rodriguez, A.; Jimenez Tejada, J. A.; Godoy, A.; Lopez Villanueva, J. A.; Gomez-Campos, F. M.; Rodriguez-Bolivar, S.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 132 135 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Accurate Simulation of the Electron Density of Surrounding Gate Transistors
    Author-s: Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Sampedro, C.; Gamiz, F.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 192 195 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Quantum Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approach
    Author-s: Sampedro, Carlos; Valin, Raul; Gamiz, Francisco; Garcia-Loureiro, Antonio; Godoy, Andres; Ruiz, F. G.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 196 199 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Effect of arbitrary orientation and strain on Surrounding Gate Transistors
    Author-s: Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Gamiz, F.
    Source: IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS 181 184 13th International Workshop on Computational Elect MAY 27-29, 2009 Beijing, Beijing 2009
  • Study of the corner effects on pi-gate SOI MOSFETs
    Author-s: Ruiz, F. G.; Godoy, A.; Gamiz, F.; Donetti, L.; Sampedro, C.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 76 79 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
  • Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. diffusive regime
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.; Ruiz, F. G.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 88 91 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
  • Ballisticity at very low drain bias in DG SOI nano-MOSFETs
    Author-s: Sampedro, Carlos; Gamiz, Francisco; Godoy, Andres; Cristoloveanu, Sorin
    Source: 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 185 186 International Semiconductor Device Research Sympos DEC 12-14, 2007 College Pk, College Pk 2007
  • Characterization of oxygen related defects in silicon p-n junctions
    Author-s: Tejada, JAJ; Villanueva, JAU; Godoy, A; Gomez-Campos, FM; Rodriguez-Bolivar, S; Carceller, JE
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 37 40 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • Monte Carlo simulation of velocity modulation transistors
    Author-s: Sampedro, C; Godoy, A; Gamiz, F; Roldan, J; Carceller, JE; Cartujo, P
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 377 380 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • DGSOI devices operated as velocity modulation transistors
    Author-s: Gamiz, F; Sampedro, C; Godoy, A; Prunnila, M; Ahopelto, J
    Source: 2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS 198 199 IEEE International SOI Conference OCT 04-07, 2004 Charleston, Charleston 2004
  • Double gate silicon-on-insulator transistors: n( )-n( ) gate versus n( )-p( ) gate configuration.
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Jimenez-Molinos, F
    Source: ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 173 176 34th European Solid-State Device Research Conferen SEP 21-23, 2004 Leuven, Leuven 2004
  • A new remote Coulomb scattering model for ultrathin oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Roldan, JB
    Source: 2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 47 50 IEEE International Conference on Simulation of Sem SEP 03-05, 2003 BOSTON, BOSTON 2003
  • Remote surface roughness scattering in ultrathin-oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Jimenez-Molinos, F; Cartujo-Cassinello, P; Roldan, JB
    Source: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 403 406 33rd European Solid-State Device Research Conferen SEP 16-18, 2003 ESTORIL, ESTORIL 2003
  • Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs.
    Author-s: Godoy, A; Palma, A; Gamiz, F; Jimenez-Tejada, JA; Cartujo, P
    Source: NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE 201 204 14th International Conference on Noise in Physical JUL 14-18, 1997 LOUVAIN, LOUVAIN 1997
  • Gate voltage and temperature dependencies of up and down times of RTS in MOS structures: A theoretical study
    Author-s: Palma, A; Godoy, A; Jimenez-Tejada, JA; Carceller, JE
    Source: NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE 210 213 14th International Conference on Noise in Physical JUL 14-18, 1997 LOUVAIN, LOUVAIN 1997

National Projects

  • ESTUDIO MULTI-ESCALA DE NANOHILOS SEMICONDUCTORES
    Principal Investigator: Andrés Godoy Medina
    Reference: FIS2011-26005
    Start date: 2012-01-01
    End date: 2014-12-31
    Research Group: TIC-250
    Amount to UGR: 42350.00
    Funding Agency: Ministerio de Ciencia e Innovación
    Program: Proyectos nacionales de investigación (MICINN)
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  • ATOMISTIC APPROACHES FOR MODELLING AND SIMULATION OF ELECTRONIC AND TRANSPORT PROPERTIES OF NANOSTRUCTURED SEMICONDUCTOR DEVICES
    Principal Investigator: Andrés Godoy Medina
    Reference: FIS2008-05805
    Start date: 2009-01-01
    End date: 2011-12-31
    Research Group: TIC-250
    Amount to UGR: 48400.00
    Funding Agency: Ministerio de Ciencia e Innovación
    Program: Proyectos nacionales de investigación (MICINN)
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Regional Projects

  • Aproximación Multidisciplinar al Modelado y Simulación Atomístico de Nanodispositivos Electrónicos Basados en Silicio y Grafeno
    Principal Investigator: Andrés Godoy Medina
    Reference: P09-TIC-4873
    Start date: 2010-03-02
    End date: 2013-02-02
    Research Group: TIC-250
    Amount to UGR: 144199.00
    Funding Agency: Consejería de Economía, Innovación y Ciencia, J.A.
    Program: Proyectos de Excelencia: Promoción general del conocimiento
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Doctoral Dissertations supervised

  • Calculation of the electronic structure and transport properties of semiconductor nanowires
    Author: Celso Jesús Martínez Blanque
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2015-02-25
    Supervision: Andrés Godoy Medina, Francisco Javier García Ruiz
    Special mention: internacional
  • Modeling and Simulation of Semiconductor Nanowires for Future Technology Nodes
    Author: Enrique González Marín
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2014-06-24
    Supervision: Andrés Godoy Medina, Francisco Javier García Ruiz
    Special mention: internacional
  • Study and Simulation of advanced Si-based Nanodevices: Schottky-Barrier MOSFETs and Tunnel FETs
    Author: Jose Luis Padilla de la Torre
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2012-10-26
    Supervision: Francisco Jesús Gámiz Pérez, Andrés Godoy Medina
    Special mention: internacional
  • Estudio, Caracterización y Simulación de Transistores con Modulación de la Velocidad en Silicio
    Author: Carlos Sampedro Matarín
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2006-12-18
    Supervision: Andrés Godoy Medina, Francisco Jesús Gámiz Pérez

Research visits

  • BECKMAN INSTITUTE; UNIVERSITY OF ILLINOIS, URBANA, IL 61801, USA
    Visiting researcher: Godoy Medina, Andrés
    Research group: TIC-250
    Place: URBANA-CHAMPAIGN; ILLINOIS; ESTADOS UNIDOS DE AMERICA
    Start date: 2008-07-12
    End date: 2008-08-17
    Visiting category: INV
  • BECKMAN INSTITUTE; UNIVERSITY OF ILLINOIS, URBANA, IL 61801, USA
    Visiting researcher: Godoy Medina, Andrés
    Research group: TIC-250
    Place: URBANA-CHAMPAIGN; ILLINOIS; ESTADOS UNIDOS DE AMERICA
    Start date: 2007-07-15
    End date: 2007-08-25
    Visiting category: INV
  • BECKMAN INSTITUTE; UNIVERSITY OF ILLINOIS, URBANA, IL 61801, USA
    Visiting researcher: Godoy Medina, Andrés
    Research group: TIC-250
    Place: URBANA-CHAMPAIGN; ILLINOIS; ESTADOS UNIDOS DE AMERICA
    Start date: 2003-06-01
    End date: 2003-10-12
    Visiting category: INV
  • BECKMAN INSTITUTE; UNIVERSITY OF ILLINOIS; URBANA, IL 61801, USA
    Visiting researcher: Godoy Medina, Andrés
    Research group: TIC-250
    Place: URBANA-CHAMPAIGN; ILINOIS; ESTADOS UNIDOS DE AMERICA
    Start date: 2002-07-01
    End date: 2002-09-30
    Visiting category: INV
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