Carlos Sampedro Matarín

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Carlos Sampedro Matarín

  • Correo:
  • Teléfono: 958 241583
  • FAX: 958 243230

Administrative data

Full member researcher

  • Position in UGR: Tenure professor
    Department where s/he teaches: Electrónica y Tecnología de Computadores
    Research group: TIC-216

Contributions and research experience

Publications in ISI SCI

  • Confinement orientation effects in S/D tunneling
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 128 48 53 2017
  • Impact of non uniform strain configuration on transport properties for FD14+devices
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 115 232 236 2016
  • Role of the gate in ballistic nanowire SOI MOSFETs
    Author-s: Mangla, A.; Sallese, J. -M.; Sampedro, C.; Gamiz, F.; Enz, C.
    Source: SOLID-STATE ELECTRONICS 112 24 2015
  • Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models
    Author-s: Cheralathan, Muthupandian; Sampedro, Carlos; Gamiz, Francisco; Iniguez, Benjamin
    Source: SOLID-STATE ELECTRONICS 98 2 6 2014
  • On the extension of ET-FDSOI roadmap for 22 nm node and beyond
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.
    Source: SOLID-STATE ELECTRONICS 90 23 27 8th EUROSOI Workshop JAN, 2012 Montpellier, Montpellier 2013
  • Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator
    Author-s: Valin, Raul; Sampedro, Carlos; Seoane, Natalia; Aldegunde, Manuel; Garcia-Loureiro, Antonio; Godoy, Andres; Gamiz, Francisco
    Source: INTERNATIONAL JOURNAL OF HIGH PERFORMANCE COMPUTING APPLICATIONS 27 4 483 492 2013
  • Two-Dimensional Monte Carlo Simulation of DGSOI MOSFET Misalignment
    Author-s: Valin, Raul; Sampedro, Carlos; Aldegunde, Manuel; Garcia-Loureiro, Antonio; Seoane, Natalia; Godoy, Andres; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 59 6 1621 1628 2012
  • Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
    Author-s: Sampedro, C.; Gamiz, F.; Donetti, L.; Godoy, A.
    Source: SOLID-STATE ELECTRONICS 70 101 105 2012
  • Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs
    Author-s: Cheralathan, M.; Sampedro, C.; Roldan, J. B.; Gamiz, F.; Iannaccone, G.; Sangiorgi, E.; Iniguez, B.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26 9 -1 -1 2011
  • Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
    Author-s: Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Sampedro, C.; Gamiz, F.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 59 1 62 67 6th Workshop of the Thematic Network on Silicon on JAN 25-27, 2010 Grenoble, Grenoble 2011
  • An Analytical I-V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
    Author-s: Roldan, J. B.; Gamiz, Francisco; Jimenez-Molinos, F.; Sampedro, Carlos; Godoy, Andres; Garcia Ruiz, Francisco J.; Rodriguez, Noel
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 11 2925 2933 2010
  • Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Valin, R.; Garcia-Loureiro, A.; Ruiz, F. G.
    Source: SOLID-STATE ELECTRONICS 54 2 131 136 5th Workshop of the Thematic-Network-on-Silicon-on JAN 19-21, 2009 Chalmers Univ Technol, Chalmers Univ Technol, Chalmers Univ Technol 2010
  • Non-metallic effects in silicided gate MOSFETs
    Author-s: Rodriguez, Noel; Gamiz, Francisco; Clerc, Raphael; Sampedro, Carlos; Godoy, Andres; Ghibaudo, Gerard
    Source: SOLID-STATE ELECTRONICS 53 12 1313 1317 10th International Conference on Ultimate Integrat MAR, 2009 Aachen, Aachen 2009
  • Monte Carlo simulation of nanoelectronic devices
    Author-s: Gamiz, F.; Godoy, A.; Donetti, L.; Sampedro, C.; Roldan, J. B.; Ruiz, F.; Tienda, I.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 8 3-4 174 191 2009
  • Accurate modeling of Metal/HfO2/Si capacitors
    Author-s: Ruiz, Francisco G.; Godoy, Andres; Donetti, Luca; Tienda-Luna, I. M.; Gamiz, Francisco; Sampedro, Carlos
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 7 3 155 158 2008
  • Monte Carlo simulation of low-field mobility in strained double gate SOI transistors
    Author-s: Gamiz, F.; Godoy, A.; Sampedro, C.; Rodriguez, N.; Ruiz, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 7 3 205 208 2008
  • Quantum-corrected Monte Carlo simulation of double gate silicon on insulator transistors
    Author-s: Sampedro, Carlos; Gamiz, Francisco; Godoy, Andres
    Source: JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 5 6 1046 1057 2008
  • A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
    Author-s: Ruiz, Francisco J. Garcia; Godoy, Andres; Gamiz, Francisco; Sampedro, Carlos; Donetti, Luca
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 12 3369 3377 2007
  • Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 6 1-3 41 44 2007
  • Quantum-mechanical effects in multiple-gate MOSFETs
    Author-s: Godoy, A.; Ruiz-Gallardo, A.; Sampedro, C.; Gamiz, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 6 1-3 145 148 2007
  • Calculation of the phonon-limited mobility in silicon gate all-around MOSFETs
    Author-s: Godoy, A.; Ruiz, F.; Sampedro, C.; Gamiz, F.; Ravaioli, U.
    Source: SOLID-STATE ELECTRONICS 51 9 1211 1215 3rd Workshop of the Thematic-Network-on-Silicon-on JAN 24-26, 2007 Leuven, Leuven 2007
  • The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures
    Author-s: Sampedro-Matarin, Carlos; Gamiz, Francisco; Godoy, Andres; Garcia Ruiz, Francisco J.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 53 11 2703 2710 2006
  • A comprehensive study of carrier velocity modulation in DGSOI transistors
    Author-s: Sampedro, C; Gamiz, F; Godoy, A; Prunnila, M; Ahopelto, J
    Source: SOLID-STATE ELECTRONICS 49 9 1504 1509 1st EUROSOI Workshop JAN 19-21, 2005 Granada, Granada 2005
  • Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs
    Author-s: Gamiz, F.; Godoy, A.; Sampedro, C.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 3 3-4 295 298 2004
  • Two-band k . p model for Si-(110) electron devices
    Author-s: Donetti, Luca; Gamiz, Francisco; Biel, Blanca; Sampedro, Carlos
    Source: JOURNAL OF APPLIED PHYSICS 114 7 -1 -1 2013
  • The effect of surface roughness scattering on hole mobility in double gate silicon-on-insulator devices
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel; Godoy, Andres; Sampedro, Carlos
    Source: JOURNAL OF APPLIED PHYSICS 106 2 -1 -1 2009
  • Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors
    Author-s: Sampedro, C; Gamiz, F; Godoy, A; Prunnila, M; Ahopelto, J
    Source: APPLIED PHYSICS LETTERS 86 20 -1 -1 2005
  • Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
    Author-s: Donetti, L; Gamiz, F; Rodriguez, N; Jimenez, F; Sampedro, C
    Source: APPLIED PHYSICS LETTERS 88 12 -1 -1 2006
  • Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Valin, R.; Garcia-Loureiro, A.; Rodriguez, N.; Tienda-Luna, I. M.; Martinez-Carricondo, F.; Biel, B.
    Source: SOLID-STATE ELECTRONICS 65-66 88 93 40th European Solid-State Device Research Conferen SEP 14-16, 2010 Seville, Seville 2011

Conferences in ISI CPCI-Science

  • Confinement Orientation Effects in S/D tunneling
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 100 103 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • Multi-Subband Ensemble Monte Carlo Study of Band-to-Band Tunneling in Silicon-based TFETs
    Author-s: Medina-Bailon, C.; Sampedro, C.; Padilla, J. L.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: 2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) 253 256 International Conference on Simulation of Semicond SEP 06-08, 2016 Nuremberg, GERMANY 2016
  • MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs
    Author-s: Gamiz, Francisco; Sampedro, Carlos; Donetti, Luca; Godoy, Andres
    Source: FRONTIERS IN ELECTRONICS: ADVANCED MODELING OF NANOSCALE ELECTRON DEVICES 54 1 32 2014
  • Non-parabolicity in Si-(110) nMOSFETs: analytic and numerical results for the two-band k . p model
    Author-s: Donetti, Luca; Gamiz, Francisco; Biel, Blanca; Sampedro, Carlos
    Source: 2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) 110 113 14th International Conference on Ultimate Integrat MAR 19-21, 2013 Univ Warwick, Univ Warwick, Univ Warwick 2013
  • Analytical Drain Current Model using Temperature dependence model in nanoscale Double-Gate (DG) MOSFETs
    Author-s: Cheralathan, M.; Sampedro, C.; Gamiz, F.; Iniguez, B.
    Source: 2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) 142 145 14th International Conference on Ultimate Integrat MAR 19-21, 2013 Univ Warwick, Univ Warwick, Univ Warwick 2013
  • Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs
    Author-s: Gamiz, F.; Donetti, L.; Rodriguez, N.; Sampedro, C.; Faynot, O.; Barbe, J. C.
    Source: IEEE INTERNATIONAL SOI CONFERENCE -1 -1 IEEE International SOI Conference OCT 01-04, 2012 Napa, Napa 2012
  • Ultrathin n-Channel and p-Channel SOI MOSFETs
    Author-s: Gamiz, F.; Donetti, L.; Sampedro, C.; Godoy, A.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: SEMICONDUCTOR-ON-INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONS 169 185 2011
  • Electron transport in silicon-on-insulator nanodevices
    Author-s: Gamiz, F.; Godoy, A.; Sampedro, C.
    Source: Nanoscaled Semiconductor-on-Insulator Structures and Devices 303 322 NATO Advanced Research Workshop on Nanoscaled Semi OCT 15-19, 2006 Big Yalta, Big Yalta 2007
  • Charge transport in nanoscaled silicon-on-insulator devices - art. no. 65910C
    Author-s: Garniz, Francisco; Godoy, Andres; Sampedro, Carlos
    Source: Nanotechnology III 6591 5910 5910 Conference on Nanotechnology III MAY 02-04, 2007 Maspalomas, Maspalomas 2007
  • Electron transport in silicon inversion slabs of nanometric thickness
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Sampedro, C
    Source: Nanotechnology II 5838 199 207 Conference on Nanotechnology II MAY 09-11, 2005 Seville, Seville 2005

Book chapters in ISI

  • HOME-MADE SOFTWARE FOR AUTONOMOUS EDUCATION OF MICROWAVE AMPLIFIERS
    Author-s: Rodriguez, Noel; Caballero, Katia; Gamiz, Francisco; Ruiz, Francisco G.; Tienda, Isabel; Donetti, Luca; Sampedro, Carlos
    Source: 2011 4TH INTERNATIONAL CONFERENCE OF EDUCATION, RESEARCH AND INNOVATION (ICERI) 2754 2758 4th International Conference of Education, Researc NOV 14-16, 2011 Madrid, Madrid 2011
  • Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-k Gate Stacks
    Author-s: Bufler, F. M.; Aubry-Fortuna, V.; Bournel, A.; Braccioli, M.; Dollfus, P.; Esseni, D.; Fiegna, C.; Gamiz, F.; De Michielis, M.; Palestri, P.; Saint-Martin, J.; Sampedro, C.; Sangiorgi, E.; Selmi, L.; Toniutti, P.
    Source: 2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) 319 322 14th International Workshop on Computational Elect OCT 26-29, 2010 Pisa, Pisa 2010
  • Quantization Effects in Silicided and Metal Gate MOSFETs.
    Author-s: Rodriguez, N.; Gamiz, F.; Clerc, R.; Sampedro, C.; Godoy, A.; Ghibaudo, G.
    Source: ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON 103 106 10th International Conference on Ultimate Integrat MAR 18-20, 2009 Aachen, Aachen 2009
  • A new inversion charge centroid model for surrounding gate transistors with HfO(2) as gate insulator
    Author-s: Balaguer, M.; Roldan, J. B.; Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Gamiz, F.; Sampedro, C.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 104 107 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Using Grid Infrastructures for a Stationary DGSOI Monte Carlo Simulation
    Author-s: Valin, R.; Aldegunde, M.; Seoane, N.; Garcia-Loureiro, A.; Sampedro, C.; Godoy, A.; Gamiz, F.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 172 175 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Accurate Simulation of the Electron Density of Surrounding Gate Transistors
    Author-s: Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Sampedro, C.; Gamiz, F.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 192 195 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Quantum Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approach
    Author-s: Sampedro, Carlos; Valin, Raul; Gamiz, Francisco; Garcia-Loureiro, Antonio; Godoy, Andres; Ruiz, F. G.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 196 199 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Enhanced electron transport by carrier overshoot in ultrascaled Double Gate MOSFETs
    Author-s: Rodriguez, Noel; Donetti, Luca; Sampedro, Carlos; Martinez-Carricondo, Francisco; Gamiz, Francisco
    Source: ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON 203 206 9th International Conference on Ultimate Integrati MAR 13-14, 2008 Univ Udine, Univ Udine, Univ Udine 2008
  • Study of the corner effects on pi-gate SOI MOSFETs
    Author-s: Ruiz, F. G.; Godoy, A.; Gamiz, F.; Donetti, L.; Sampedro, C.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 76 79 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
  • Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. diffusive regime
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.; Ruiz, F. G.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 88 91 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
  • Ballisticity at very low drain bias in DG SOI nano-MOSFETs
    Author-s: Sampedro, Carlos; Gamiz, Francisco; Godoy, Andres; Cristoloveanu, Sorin
    Source: 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 185 186 International Semiconductor Device Research Sympos DEC 12-14, 2007 College Pk, College Pk 2007
  • Monte Carlo simulation of velocity modulation transistors
    Author-s: Sampedro, C; Godoy, A; Gamiz, F; Roldan, J; Carceller, JE; Cartujo, P
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 377 380 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • DGSOI devices operated as velocity modulation transistors
    Author-s: Gamiz, F; Sampedro, C; Godoy, A; Prunnila, M; Ahopelto, J
    Source: 2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS 198 199 IEEE International SOI Conference OCT 04-07, 2004 Charleston, Charleston 2004

Doctoral Dissertations supervised

  • Development of a Multisubband Monte Carlo Simulator for Nanometric Transistors
    Author: Cristina Medina Bailón
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2017-02-02
    Supervision: Carlos Sampedro Matarín, Francisco Jesús Gámiz Pérez
    Special mention: internacional
  • Parallelisation and Optimisation of a 2D Monte Carlo Simulator on Grid and Cluster
    Author: Raúl Valín Ferreiro
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2011-11-25
    Supervision: Carlos Sampedro Matarín, Antonio García Loureiro, Natalia Seoane Iglesias
    Special mention: europea

Research visits

  • UNIVERSIDAD DE SANTIAGO DE COMPOSTELA. ---
    Visiting researcher: Sampedro Matarín, Carlos
    Research group: TIC-216
    Start date: 2009-02-10
    End date: 2009-02-19
    Visiting category: POSTD
  • UNIVERSIDAD DE SANTIAGO DE COMPOSTELA. ---
    Visiting researcher: Sampedro Matarín, Carlos
    Research group: TIC-216
    Start date: 2008-08-31
    End date: 2008-09-15
    Visiting category: POSTD
  • UNIVERSITY OF GLASGOW
    Visiting researcher: Sampedro Matarín, Carlos
    Research group: TIC-216
    Place: GLASGOW; REINO UNIDO
    Start date: 2005-02-08
    End date: 2005-03-17
  • FACHHOCHSCHULE PFORZHEIM
    Visiting researcher: Sampedro Matarín, Carlos
    Research group: TIC-216
    Place: PFORZHEIM; ALEMANIA
    Start date: 2001-11-01
    End date: 2003-02-28
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