Luca Donetti

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Luca Donetti

Administrative data

Full member researcher

  • Position in UGR: Tenure professor
    Department where s/he teaches: Electrónica y Tecnología de Computadores
    Research group: TIC-216

Contributions and research experience

Publications in ISI SCI

  • Confinement orientation effects in S/D tunneling
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 128 48 53 2017
  • Impact of non uniform strain configuration on transport properties for FD14+devices
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 115 232 236 2016
  • Tunability of effective masses on MoS2 monolayers
    Author-s: Biel, Blanca; Donetti, Luca; Ortiz, Ernesto R.; Godoy, Andres; Gamiz, Francisco
    Source: MICROELECTRONIC ENGINEERING 147 302 2015
  • Ab initio validation of continuum models parametrizations for ultrascaled SOI interfaces
    Author-s: Biel, Blanca; Donetti, Luca; Godoy, Andres; Gamiz, Francisco
    Source: MICROELECTRONIC ENGINEERING 109 286 289 2013
  • Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
    Author-s: Sampedro, C.; Gamiz, F.; Donetti, L.; Godoy, A.
    Source: SOLID-STATE ELECTRONICS 70 101 105 2012
  • Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
    Author-s: Balaguer, M.; Roldan, J. B.; Donetti, L.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 67 1 30 37 2012
  • Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
    Author-s: Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Sampedro, C.; Gamiz, F.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 59 1 62 67 6th Workshop of the Thematic Network on Silicon on JAN 25-27, 2010 Grenoble, Grenoble 2011
  • A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETs
    Author-s: Garcia Ruiz, Francisco J.; Maria Tienda-Luna, Isabel; Godoy, Andres; Donetti, Luca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 10 2477 2483 2010
  • Hole transport in DGSOI devices: Orientation and silicon thickness effects
    Author-s: Donetti, L.; Gamiz, F.; Rodriguez, N.; Jimenez-Molinos, F.; Roldan, J. B.
    Source: SOLID-STATE ELECTRONICS 54 2 191 195 5th Workshop of the Thematic-Network-on-Silicon-on JAN 19-21, 2009 Chalmers Univ Technol, Chalmers Univ Technol, Chalmers Univ Technol 2010
  • Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel; Godoy, Andres
    Source: IEEE ELECTRON DEVICE LETTERS 30 12 1338 1340 2009
  • Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-kappa Insulators
    Author-s: Garcia Ruiz, Francisco J.; Maria Tienda-Luna, Isabel; Godoy, Andres; Donetti, Luca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 56 11 2711 2719 2009
  • Monte Carlo simulation of nanoelectronic devices
    Author-s: Gamiz, F.; Godoy, A.; Donetti, L.; Sampedro, C.; Roldan, J. B.; Ruiz, F.; Tienda, I.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 8 3-4 174 191 2009
  • Simulation of hole mobility in two-dimensional systems
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 24 3 -1 -1 2009
  • Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-kappa insulators
    Author-s: Tienda-Luna, I. M.; Ruiz, F. J. Garcia; Donetti, L.; Godoy, A.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 52 12 1854 1860 2008
  • Accurate modeling of Metal/HfO2/Si capacitors
    Author-s: Ruiz, Francisco G.; Godoy, Andres; Donetti, Luca; Tienda-Luna, I. M.; Gamiz, Francisco; Sampedro, Carlos
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 7 3 155 158 2008
  • Network synchronization: optimal and pessimal scale-free topologies
    Author-s: Donetti, Luca; Hurtado, Pablo I.; Munoz, Miguel A.
    Source: JOURNAL OF PHYSICS A-MATHEMATICAL AND THEORETICAL 41 22 -1 -1 Workshop on Complex Networks - from Biology to Inf JUL, 2007 Pula, Pula 2008
  • A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
    Author-s: Ruiz, Francisco J. Garcia; Godoy, Andres; Gamiz, Francisco; Sampedro, Carlos; Donetti, Luca
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 12 3369 3377 2007
  • Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices
    Author-s: Donetti, L.; Gamiz, F.; Cristoloveanu, S.
    Source: SOLID-STATE ELECTRONICS 51 9 1216 1220 3rd Workshop of the Thematic-Network-on-Silicon-on JAN 24-26, 2007 Leuven, Leuven 2007
  • Phonon scattering in Si-based nanodevices
    Author-s: Donetti, L.; Gamiz, F.; Rodriguez, N.; Ruiz, F. G.
    Source: SOLID-STATE ELECTRONICS 51 4 593 597 7th International Conference on Ultimate Integrati APR 20-21, 2006 Grenoble, Grenoble 2007
  • Optimal network topologies: expanders, cages, Ramanujan graphs, entangled networks and all that
    Author-s: Donetti, Luca; Neri, Franco; Munoz, Miguel A.
    Source: JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT -1 -1 2006
  • Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
    Author-s: Donetti, L.; Gamiz, F.; Roldan, J. B.; Godoy, A.
    Source: JOURNAL OF APPLIED PHYSICS 100 1 -1 -1 2006
  • Detecting network communities: a new systematic and efficient algorithm
    Author-s: Donetti, L; Munoz, MA
    Source: JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT -1 -1 2004
  • Lee-Yang zeros and the Ising model on the Sierpinski gasket
    Author-s: Burioni, R; Cassi, D; Donetti, L
    Source: JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL 32 27 5017 5027 1999
  • On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
    Author-s: Thomas, S. M.; Prest, M. J.; Whall, T. E.; Leadley, D. R.; Toniutti, P.; Conzatti, F.; Esseni, D.; Donetti, L.; Gamiz, F.; Lander, R. J. P.; Vellianitis, G.; Hellstrom, P. -E.; Ostling, M.
    Source: JOURNAL OF APPLIED PHYSICS 110 12 -1 -1 2011
  • Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
    Author-s: Donetti, L.; Gamiz, F.; Thomas, S.; Whall, T. E.; Leadley, D. R.; Hellstrom, P. -E.; Malm, G.; Ostling, M.
    Source: JOURNAL OF APPLIED PHYSICS 110 6 -1 -1 2011
  • Two-band k . p model for Si-(110) electron devices
    Author-s: Donetti, Luca; Gamiz, Francisco; Biel, Blanca; Sampedro, Carlos
    Source: JOURNAL OF APPLIED PHYSICS 114 7 -1 -1 2013
  • Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
    Author-s: Ohata, A.; Rodriguez, N.; Navarro, C.; Donetti, L.; Gamiz, F.; Fenouillet-Beranger, F. C.; Cristoloveanu, S.
    Source: JOURNAL OF APPLIED PHYSICS 113 14 -1 -1 2013
  • The spectral dimension of random trees
    Author-s: Destri, C; Donetti, L
    Source: JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL 35 45 9499 9515 2002
  • Entangled networks, synchronization, and optimal network topology
    Author-s: Donetti, L; Hurtado, PI; Munoz, MA
    Source: PHYSICAL REVIEW LETTERS 95 18 -1 -1 2005
  • Coulomb scattering in high-kappa gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
    Author-s: Jimenez-Molinos, F.; Gamiz, F.; Donetti, L.
    Source: JOURNAL OF APPLIED PHYSICS 104 6 -1 -1 2008
  • The effect of surface roughness scattering on hole mobility in double gate silicon-on-insulator devices
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel; Godoy, Andres; Sampedro, Carlos
    Source: JOURNAL OF APPLIED PHYSICS 106 2 -1 -1 2009
  • On the growth of bounded trees
    Author-s: Destri, C; Donetti, L
    Source: JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL 35 25 5147 5163 2002
  • The statistical geometry of scale-free random trees
    Author-s: Donetti, L; Destri, C
    Source: JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL 37 23 6003 6025 2004
  • Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
    Author-s: Donetti, L; Gamiz, F; Rodriguez, N; Jimenez, F; Sampedro, C
    Source: APPLIED PHYSICS LETTERS 88 12 -1 -1 2006

Conferences in ISI CPCI-Science

  • Confinement Orientation Effects in S/D tunneling
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 100 103 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • Multi-Subband Ensemble Monte Carlo Study of Band-to-Band Tunneling in Silicon-based TFETs
    Author-s: Medina-Bailon, C.; Sampedro, C.; Padilla, J. L.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: 2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) 253 256 International Conference on Simulation of Semicond SEP 06-08, 2016 Nuremberg, GERMANY 2016
  • Strain effects on effective masses for MoS2 monolayers
    Author-s: Ortiz, E. R.; Biel, Blanca; Donetti, Luca; Godoy, Andres; Gamiz, Francisco
    Source: EURO-TMCS I: THEORY, MODELLING AND COMPUTATIONAL METHODS FOR SEMICONDUCTORS 609 1st Conference on Theory, Modelling and Computatio JAN 28-30, 2015 Univ Granada, Fac Sci, Granada, SPAIN 2015
  • Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs
    Author-s: Gamiz, F.; Donetti, L.; Rodriguez, N.; Sampedro, C.; Faynot, O.; Barbe, J. C.
    Source: IEEE INTERNATIONAL SOI CONFERENCE -1 -1 IEEE International SOI Conference OCT 01-04, 2012 Napa, Napa 2012
  • Fully self-consistent k . p solver and Monte Carlo simulator for hole inversion layers
    Author-s: Donetti, Luca; Gamiz, Francisco; Godoy, Andres; Rodriguez, Noel
    Source: ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 254 257 38th European Solid-State Device Research Conferen SEP 15-19, 2008 Edinburgh, Edinburgh 2008
  • Anisotropy of electron mobility in arbitrarily oriente FinFETs
    Author-s: Gamiz, Francisco; Donetti, Luca; Rodriguez, Noel
    Source: ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 378 381 37th European Solid-State Device Research Conferen SEP 11-13, 2007 Technische Univ Munchen, Technische Univ Munchen, Technische Univ Munchen 2007
  • Synchronization in network structures: Entangled topology as optimal architecture for network design
    Author-s: Donetti, Luca; Hurtado, Pablo I.; Munoz, Miguel A.
    Source: COMPUTATIONAL SCIENCE - ICCS 2006, PT 3, PROCEEDINGS 3993 1075 1082 6th International Conference on Computational Scie MAY 28-31, 2006 Reading, Reading 2006
  • Improved spectral algorithm for the detection of network communities
    Author-s: Donetti, L; Munoz, MA
    Source: MODELING COOPERATIVE BEHAVIOR IN THE SOCIAL SCIENCES 779 104 107 8th Granada Seminar FEB 07-11, 2005 Univ Granada, Fac Ciencias, Univ Granada, Fac Ciencias, Univ Granada, Fac Ciencias 2005

Book chapters in ISI

  • Enhanced electron transport by carrier overshoot in ultrascaled Double Gate MOSFETs
    Author-s: Rodriguez, Noel; Donetti, Luca; Sampedro, Carlos; Martinez-Carricondo, Francisco; Gamiz, Francisco
    Source: ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON 203 206 9th International Conference on Ultimate Integrati MAR 13-14, 2008 Univ Udine, Univ Udine, Univ Udine 2008
  • Study of the corner effects on pi-gate SOI MOSFETs
    Author-s: Ruiz, F. G.; Godoy, A.; Gamiz, F.; Donetti, L.; Sampedro, C.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 76 79 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
  • Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. diffusive regime
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.; Ruiz, F. G.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 88 91 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
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