Francisco Jesús Gámiz Pérez

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Francisco Jesús Gámiz Pérez

Administrative data

Full member researcher

  • Position in UGR: Professor
    Department where s/he teaches: Electrónica y Tecnología de Computadores
    Research group: TIC-216

Contributions and research experience

Publications in ISI SCI

  • Investigating the transient response of Schottky barrier back-gated MoS2 transistors
    Author-s: Marquez, Carlos; Salazar, Norberto; Gity, Farzan; Navarro, Carlos; Mirabelli, Gioele; Galdon, Jose C.; Duffy, Ray; Navarro, Santiago; Hurley, Paul K.; Gamiz, Francisco
    Source: 2D MATERIALS 7 2 0 0 2020
  • Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors
    Author-s: Kwon, S.; Navarro, C.; Galy, P.; Cristoloveanu, S.; Gamiz, F.; Ahn, J.; Kim, Y-T
    Source: IEEE ELECTRON DEVICE LETTERS 41 3 361 364 2020
  • Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
    Author-s: Medina-Bailon, Cristina; Carrillo-Nunez, Hamilton; Lee, Jaehyun; Sampedro, Carlos; Padilla, Jose Luis; Donetti, Luca; Georgiev, Vihar; Gamiz, Francisco; Asenov, Asen
    Source: MICROMACHINES 11 2 0 0 2020
  • Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
    Author-s: Medina-Bailon, Cristina; Padilla, Jose L.; Sadi, Toufik; Sampedro, Carlos; Godoy, Andres; Donetti, Luca; Georgiev, Vihar P.; Gamiz, Francisco; Asenov, Asen
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 66 3 1145 1152 2019
  • Thorough Understanding of Retention Time of Z2FET Memory Operation
    Author-s: Duan, M.; Navarro, C.; Cheng, B.; Adamu-Lema, F.; Wang, X.; Georgiev, V. P.; Gamiz, F.; Millar, C.; Asenov, A.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 66 1 383 388 2019
  • Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multi subband Ensemble Monte Carlo
    Author-s: Medina-Bailon, Cristina; Padilla, Jose L.; Sampedro, Carlos; Godoy, Andres; Donetti, Luca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 65 11 4740 4746 2018
  • Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
    Author-s: Padilla, Jose L.; Medina-Bailon, Cristina; Marquez, Carlos; Sampedro, Carlos; Donetti, Luca; Gamiz, Francisco; Ionescu, Adrian Mihai
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 65 10 4679 4686 2018
  • Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
    Author-s: Donetti, L.; Sampedro, C.; Ruiz, F. G.; Godoy, A.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 143 49 55 3rd Joint International EUROSOI Workshop / Interna APR 03-05, 2017 Athens, GREECE 2018
  • Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities
    Author-s: Padilla, Jose L.; Medina-Bailon, Cristina; Navarro, Carlos; Alper, Cem; Gamiz, Francisco; Ionescu, Adrian Mihai
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 65 1 339 346 2018
  • Z(2)-FET as Capacitor-Less eDRAM Cell For High-Density Integration
    Author-s: Navarro, Carlos; Duan, Meng; Parihar, Mukta Singh; Adamu-Lema, Fikru; Coseman, Stefan; Lacord, Joris; Lee, Kyunghwa; Sampedro, Carlos; Cheng, Binjie; El Dirani, Hassan; Barbe, Jean-Charles; Fonteneau, Pascal; Kim, Seong-Il; Cristoloveanu, Sorin; Bawedin, Maryline; Millar, Campbell; Galy, Philippe; Le Royer, Cyrille; Karg, Siegfried; Riel, Heike; Wells, Paul; Kim, Yong-Tae; Asenov, Asen; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 64 12 4904 4909 2017
  • Insights on the Body Charging and Noise Generation by Impact Ionization in Fully Depleted SOI MOSFETs
    Author-s: Marquez, Carlos; Rodriguez, Noel; Gamiz, Francisco; Ohata, Akiko
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 64 12 5093 5098 2017
  • Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires
    Author-s: Martinez-Blanque, C.; Marin, E. G.; Toral, A.; Gonzalez-Medina, J. M.; Ruiz, F. G.; Godoy, A.; Gamiz, F.
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 49 0 0 2017
  • Extended Analysis of the Z(2)-FET: Operation as Capacitorless eDRAM
    Author-s: Navarro, Carlos; Lacord, Joris; Parihar, Mukta Singh; Adamu-Lema, Fikru; Duan, Meng; Rodriguez, Noel; Cheng, Binjie; El Dirani, Hassan; Barbe, Jean-Charles; Fonteneau, Pascal; Bawedin, Maryline; Millar, Campbell; Galy, Philippe; Le Royer, Cyrille; Karg, Siegfried; Wells, Paul; Kim, Yong-Tae; Asenov, Asen; Cristoloveanu, Sorin; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 64 11 4486 4491 2017
  • Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs
    Author-s: Medina-Bailon, Cristina; Padilla, Jose L.; Sampedro, Carlos; Alper, Cem; Gamiz, Francisco; Ionescu, Adrian Mihai
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 64 8 3084 3091 2017
  • Ultra-low power 1T-DRAM in FDSOI technology
    Author-s: El Dirani, H.; Lee, K. H.; Parihar, M. S.; Lacord, J.; Martinie, S.; Barbe, J-Ch.; Mescot, X.; Fonteneau, P.; Broquin, J. -E.; Ghibaudo, G.; Galy, Ph; Gamiz, F.; Taur, Y.; Kim, Y. -T.; Cristoloveanu, S.; Bawedin, M.
    Source: MICROELECTRONIC ENGINEERING 178 245 249 20th Meeting on Insulating Films on Semiconductors JUN 27-30, 2017 Potsdam, GERMANY 2017
  • Confinement orientation effects in S/D tunneling
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 128 48 53 2017
  • Systematic method for electrical characterization of random telegraph noise in MOSFETs
    Author-s: Marquez, Carlos; Rodriguez, Noel; Gamiz, Francisco; Ohata, Akiko
    Source: SOLID-STATE ELECTRONICS 128 115 120 2017
  • Comment on Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening
    Author-s: Padilla, J. L.; Palomares, A.; Gamiz, F.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 63 12 5077 5078 2016
  • Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
    Author-s: Padilla, Jose L.; Alper, Cem; Gamiz, Francisco; Ionescu, Adrian Mihai
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 63 8 3320 3326 2016
  • Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations
    Author-s: Padilla, Jose L.; Alper, Cem; Gamiz, Francisco; Ionescu, Adrian Mihai
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 63 6 2570 2576 2016
  • Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation
    Author-s: Marquez, Carlos; Rodriguez, Noel; Gamiz, Francisco; Ruiz, Rafael; Ohata, Akiko
    Source: SOLID-STATE ELECTRONICS 117 60 65 2016
  • Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor
    Author-s: Padilla, J. L.; Palomares, A.; Alper, C.; Gamiz, F.; Ionescu, A. M.
    Source: JOURNAL OF APPLIED PHYSICS 119 4 0 0 2016
  • Impact of non uniform strain configuration on transport properties for FD14+devices
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 115 232 236 2016
  • Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility
    Author-s: Marin, Enrique G.; Ruiz, Francisco G.; Godoy, Andres; Maria Tienda-Luna, Isabel; Martinez-Blanque, Celso; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 62 1 224 227 2015
  • The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires
    Author-s: Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Gamiz, F.
    Source: APPLIED PHYSICS LETTERS 106 2 2015
  • Theoretical interpretation of the electron mobility behavior in InAs nanowires
    Author-s: Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Martinez-Blanque, C.; Gamiz, F.
    Source: JOURNAL OF APPLIED PHYSICS 116 17 -1 -1 2014
  • In Situ Characterization of Bias Instability in Bare SOI Wafers by Pseudo-MOSFET Technique
    Author-s: Marquez, Carlos; Rodriguez, Noel; Fernandez, Cristina; Ohata, Akiko; Gamiz, Francisco; Allibert, Frederic; Cristoloveanu, Sorin
    Source: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 14 3 878 883 2014
  • Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models
    Author-s: Cheralathan, Muthupandian; Sampedro, Carlos; Gamiz, Francisco; Iniguez, Benjamin
    Source: SOLID-STATE ELECTRONICS 98 2 6 2014
  • Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs
    Author-s: Mangla, Anurag; Sallese, Jean-Michel; Sampedro, Carlos; Gamiz, Francisco; Enz, Christian
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 61 8 2640 2646 2014
  • Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects
    Author-s: Marin, E. G.; Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 92 28 34 2014
  • An analytical mobility model for square Gate-All-Around MOSFETs
    Author-s: Tienda-Luna, I. M.; Roldan, J. B.; Ruiz, F. G.; Blanque, C. M.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 90 18 22 8th EUROSOI Workshop JAN, 2012 Montpellier, Montpellier 2013
  • On the extension of ET-FDSOI roadmap for 22 nm node and beyond
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.
    Source: SOLID-STATE ELECTRONICS 90 23 27 8th EUROSOI Workshop JAN, 2012 Montpellier, Montpellier 2013
  • A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration
    Author-s: Diab, A.; Fernandez, C.; Ohata, A.; Rodriguez, N.; Ionica, I.; Bae, Y.; Van den Daele, W.; Allibert, F.; Gamiz, F.; Ghibaudo, G.; Mazure, C.; Cristoloveanu, S.
    Source: SOLID-STATE ELECTRONICS 90 127 133 8th EUROSOI Workshop JAN, 2012 Montpellier, Montpellier 2013
  • Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator
    Author-s: Valin, Raul; Sampedro, Carlos; Seoane, Natalia; Aldegunde, Manuel; Garcia-Loureiro, Antonio; Godoy, Andres; Gamiz, Francisco
    Source: INTERNATIONAL JOURNAL OF HIGH PERFORMANCE COMPUTING APPLICATIONS 27 4 483 492 2013
  • Ab initio validation of continuum models parametrizations for ultrascaled SOI interfaces
    Author-s: Biel, Blanca; Donetti, Luca; Godoy, Andres; Gamiz, Francisco
    Source: MICROELECTRONIC ENGINEERING 109 286 289 2013
  • The effect of quantum confinement on tunneling field-effect transistors with high-kappa gate dielectric
    Author-s: Padilla, J. L.; Gamiz, F.; Godoy, A.
    Source: APPLIED PHYSICS LETTERS 103 11 -1 -1 2013
  • Bias-Engineered Mobility in Advanced FD-SOI MOSFETs
    Author-s: Fernandez, Cristina; Rodriguez, Noel; Ohata, Akiko; Gamiz, Francisco; Andrieu, Francois; Fenouillet-Beranger, Claire; Faynot, Olivier; Cristoloveanu, Sorin
    Source: IEEE ELECTRON DEVICE LETTERS 34 7 840 842 2013
  • Analytical Gate Capacitance Modeling of III-V Nanowire Transistors
    Author-s: Marin, Enrique G.; Garcia Ruiz, Francisco J.; Maria Tienda-Luna, Isabel; Godoy, Andres; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 60 5 1590 1599 2013
  • An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
    Author-s: Roldan, J. B.; Jimenez-Molinos, F.; Balaguer, M.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 79 92 97 2013
  • Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double-Gate Tunnel FETs
    Author-s: Padilla, Jose L.; Gamiz, Francisco; Godoy, Andres
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 59 12 3205 3211 2012
  • Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator
    Author-s: Rodriguez, Noel; Navarro, Carlos; Gamiz, Francisco; Andrieu, Francois; Faynot, Olivier; Cristoloveanu, Sorin
    Source: IEEE ELECTRON DEVICE LETTERS 33 12 1717 1719 2012
  • A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors
    Author-s: Padilla, J. L.; Gamiz, F.; Godoy, A.
    Source: IEEE ELECTRON DEVICE LETTERS 33 10 1342 1344 2012
  • Multibranch Mobility Analysis for the Characterization of FDSOI Transistors
    Author-s: Navarro, Carlos; Rodriguez, Noel; Ohata, Akiko; Gamiz, Francisco; Andrieu, Francois; Fenouillet-Beranger, Claire; Faynot, Olivier; Cristoloveanu, Sorin
    Source: IEEE ELECTRON DEVICE LETTERS 33 8 1102 1104 2012
  • Two-Dimensional Monte Carlo Simulation of DGSOI MOSFET Misalignment
    Author-s: Valin, Raul; Sampedro, Carlos; Aldegunde, Manuel; Garcia-Loureiro, Antonio; Seoane, Natalia; Godoy, Andres; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 59 6 1621 1628 2012
  • Simulation of Fabricated 20-nm Schottky Barrier MOSFETs on SOI: Impact of Barrier Lowering
    Author-s: Padilla, J. L.; Knoll, L.; Gamiz, F.; Zhao, Q. T.; Godoy, A.; Mantl, S.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 59 5 1320 1327 2012
  • Selected Full-Length Papers from the EUROSOI 2011 Conference Foreword
    Author-s: Godoy, Andres; Gamiz, Francisco
    Source: SOLID-STATE ELECTRONICS 70 1 2 2012
  • Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
    Author-s: Sampedro, C.; Gamiz, F.; Donetti, L.; Godoy, A.
    Source: SOLID-STATE ELECTRONICS 70 101 105 2012
  • Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
    Author-s: Balaguer, M.; Roldan, J. B.; Donetti, L.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 67 1 30 37 2012
  • In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic Orientations
    Author-s: Balaguer, Maria; Roldan Aranda, Juan Bautista; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 12 4438 4441 2011
  • Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs
    Author-s: Tienda-Luna, Isabel M.; Garcia Ruiz, Francisco J.; Godoy, Andres; Biel, Blanca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 10 3350 3357 2011
  • Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs
    Author-s: Cheralathan, M.; Sampedro, C.; Roldan, J. B.; Gamiz, F.; Iannaccone, G.; Sangiorgi, E.; Iniguez, B.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26 9 -1 -1 2011
  • An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs
    Author-s: Moreno Perez, Enrique; Roldan Aranda, Juan Bautista; Garcia Ruiz, Francisco J.; Barrera Rosillo, Domingo; Ibanez Perez, Maria Jose; Godoy, Andres; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 9 2854 2861 2011
  • Novel Capacitorless 1T-DRAM Cell for 22-nm Node Compatible With Bulk and SOI Substrates
    Author-s: Rodriguez, Noel; Cristoloveanu, Sorin; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 8 2371 2377 2011
  • Three-interface pseudo-MOSFET models for the characterization of SOI wafers with ultrathin film and BOX
    Author-s: Rodriguer, Noel; Cristoloveanu, Sorin; Maqueda, Mariazel; Gamiz, Francisco; Allibert, Frederic
    Source: MICROELECTRONIC ENGINEERING 88 7 1236 1239 17th International Conference on Insultating Films JUN 21-24, 2011 Grenoble, Grenoble 2011
  • Capacitor-less A-RAM SOI memory: Principles, scaling and expected performance
    Author-s: Rodriguez, Noel; Cristoloveanu, Sorin; Gamiz, Francisco
    Source: SOLID-STATE ELECTRONICS 59 1 44 49 6th Workshop of the Thematic Network on Silicon on JAN 25-27, 2010 Grenoble, Grenoble 2011
  • Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
    Author-s: Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Sampedro, C.; Gamiz, F.; Donetti, L.
    Source: SOLID-STATE ELECTRONICS 59 1 62 67 6th Workshop of the Thematic Network on Silicon on JAN 25-27, 2010 Grenoble, Grenoble 2011
  • An analytical model for square GAA MOSFETs including quantum effects
    Author-s: Moreno, E.; Roldan, J. B.; Ruiz, F. G.; Barrera, D.; Godoy, A.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 54 11 1463 1469 2010
  • An Analytical I-V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
    Author-s: Roldan, J. B.; Gamiz, Francisco; Jimenez-Molinos, F.; Sampedro, Carlos; Godoy, Andres; Garcia Ruiz, Francisco J.; Rodriguez, Noel
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 11 2925 2933 2010
  • A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETs
    Author-s: Garcia Ruiz, Francisco J.; Maria Tienda-Luna, Isabel; Godoy, Andres; Donetti, Luca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 10 2477 2483 2010
  • A-RAM Memory Cell: Concept and Operation
    Author-s: Rodriguez, Noel; Gamiz, Francisco; Cristoloveanu, Sorin
    Source: IEEE ELECTRON DEVICE LETTERS 31 9 972 974 2010
  • Why the Universal Mobility Is Not
    Author-s: Cristoloveanu, Sorin; Rodriguez, Noel; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 6 1327 1333 2010
  • An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETs
    Author-s: Jimenez-Molinos, F.; Roldan, J. B.; Balaguer, M.; Gamiz, F.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 25 5 -1 -1 2010
  • Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Valin, R.; Garcia-Loureiro, A.; Ruiz, F. G.
    Source: SOLID-STATE ELECTRONICS 54 2 131 136 5th Workshop of the Thematic-Network-on-Silicon-on JAN 19-21, 2009 Chalmers Univ Technol, Chalmers Univ Technol, Chalmers Univ Technol 2010
  • Hole transport in DGSOI devices: Orientation and silicon thickness effects
    Author-s: Donetti, L.; Gamiz, F.; Rodriguez, N.; Jimenez-Molinos, F.; Roldan, J. B.
    Source: SOLID-STATE ELECTRONICS 54 2 191 195 5th Workshop of the Thematic-Network-on-Silicon-on JAN 19-21, 2009 Chalmers Univ Technol, Chalmers Univ Technol, Chalmers Univ Technol 2010
  • Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel; Godoy, Andres
    Source: IEEE ELECTRON DEVICE LETTERS 30 12 1338 1340 2009
  • Non-metallic effects in silicided gate MOSFETs
    Author-s: Rodriguez, Noel; Gamiz, Francisco; Clerc, Raphael; Sampedro, Carlos; Godoy, Andres; Ghibaudo, Gerard
    Source: SOLID-STATE ELECTRONICS 53 12 1313 1317 10th International Conference on Ultimate Integrat MAR, 2009 Aachen, Aachen 2009
  • Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-kappa Insulators
    Author-s: Garcia Ruiz, Francisco J.; Maria Tienda-Luna, Isabel; Godoy, Andres; Donetti, Luca; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 56 11 2711 2719 2009
  • Monte Carlo simulation of nanoelectronic devices
    Author-s: Gamiz, F.; Godoy, A.; Donetti, L.; Sampedro, C.; Roldan, J. B.; Ruiz, F.; Tienda, I.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 8 3-4 174 191 2009
  • Revisited Pseudo-MOSFET Models for the Characterization of Ultrathin SOI Wafers
    Author-s: Rodriguez, Noel; Cristoloveanu, Sorin; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 56 7 1507 1515 2009
  • Simulation of hole mobility in two-dimensional systems
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 24 3 -1 -1 2009
  • Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-kappa insulators
    Author-s: Tienda-Luna, I. M.; Ruiz, F. J. Garcia; Donetti, L.; Godoy, A.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 52 12 1854 1860 2008
  • Accurate modeling of Metal/HfO2/Si capacitors
    Author-s: Ruiz, Francisco G.; Godoy, Andres; Donetti, Luca; Tienda-Luna, I. M.; Gamiz, Francisco; Sampedro, Carlos
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 7 3 155 158 2008
  • Monte Carlo simulation of low-field mobility in strained double gate SOI transistors
    Author-s: Gamiz, F.; Godoy, A.; Sampedro, C.; Rodriguez, N.; Ruiz, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 7 3 205 208 2008
  • The quantization impact of accumulated carriers in silicide-gated MOSFETs
    Author-s: Rodriguez, Noel; Gamiz, Francisco; Clerc, Raphael; Ghibaudo, Gerard; Cristoloveanu, Sorin
    Source: IEEE ELECTRON DEVICE LETTERS 29 6 628 631 2008
  • Quantum-corrected Monte Carlo simulation of double gate silicon on insulator transistors
    Author-s: Sampedro, Carlos; Gamiz, Francisco; Godoy, Andres
    Source: JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 5 6 1046 1057 2008
  • Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
    Author-s: Roldan, J. B.; Godoy, Andres; Gamiz, Francisco; Balaguer, M.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 55 1 411 416 2008
  • A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
    Author-s: Ruiz, Francisco J. Garcia; Godoy, Andres; Gamiz, Francisco; Sampedro, Carlos; Donetti, Luca
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 12 3369 3377 2007
  • Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 6 1-3 41 44 2007
  • Quantum-mechanical effects in multiple-gate MOSFETs
    Author-s: Godoy, A.; Ruiz-Gallardo, A.; Sampedro, C.; Gamiz, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 6 1-3 145 148 2007
  • Calculation of the phonon-limited mobility in silicon gate all-around MOSFETs
    Author-s: Godoy, A.; Ruiz, F.; Sampedro, C.; Gamiz, F.; Ravaioli, U.
    Source: SOLID-STATE ELECTRONICS 51 9 1211 1215 3rd Workshop of the Thematic-Network-on-Silicon-on JAN 24-26, 2007 Leuven, Leuven 2007
  • Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices
    Author-s: Donetti, L.; Gamiz, F.; Cristoloveanu, S.
    Source: SOLID-STATE ELECTRONICS 51 9 1216 1220 3rd Workshop of the Thematic-Network-on-Silicon-on JAN 24-26, 2007 Leuven, Leuven 2007
  • A theoretical interpretation of magnetoresistance mobility in silicon inversion layers
    Author-s: Donetti, L.; Gamiz, F.; Cristoloveanu, S.
    Source: JOURNAL OF APPLIED PHYSICS 102 1 -1 -1 2007
  • Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide MOSFET behavior: The influence of crystallographic orientation
    Author-s: Rodriguez, Noel; Gamiz, Francisco; Roldan, Juan B.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 4 723 732 2007
  • An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms
    Author-s: Rodriguez, N.; Roldan, J. B.; Gamiz, F.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 4 348 353 2007
  • Phonon scattering in Si-based nanodevices
    Author-s: Donetti, L.; Gamiz, F.; Rodriguez, N.; Ruiz, F. G.
    Source: SOLID-STATE ELECTRONICS 51 4 593 597 7th International Conference on Ultimate Integrati APR 20-21, 2006 Grenoble, Grenoble 2007
  • The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures
    Author-s: Sampedro-Matarin, Carlos; Gamiz, Francisco; Godoy, Andres; Garcia Ruiz, Francisco J.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 53 11 2703 2710 2006
  • Ontogeny, hippocampus and contextual specificity of taste memory
    Author-s: Manrique, T.; Gamiz, F.; Guerrero, R. M.; Moron, I.; Ballesteros, M. A.; Gallo, M.
    Source: CHEMICAL SENSES 31 8 11 12 17th Congress of the European-Chemoreception-Resea SEP 04-08, 2006 Granada, Granada 2006
  • PN64 Wistar rats behave as adolescents concerning the temporal modulation of taste learning
    Author-s: Garcia-Burgos, D.; Gamiz, F.; Diaz, A.; Manrique, T.; Gallo, M.
    Source: CHEMICAL SENSES 31 8 17 17 17th Congress of the European-Chemoreception-Resea SEP 04-08, 2006 Granada, Granada 2006
  • Peculiar time of day modulation of taste learning during ontogeny
    Author-s: Gamiz, F.; Manrique, T.; Moron, I.; Ballesteros, M. A.; Gallo, M.
    Source: CHEMICAL SENSES 31 8 20 21 17th Congress of the European-Chemoreception-Resea SEP 04-08, 2006 Granada, Granada 2006
  • Confined acoustic phonons in ultrathin SOI layers
    Author-s: Donetti, L.; Gamiz, F.; Roldan, J. B.; Godoy, A.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 5 2-3 199 203 2006
  • Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
    Author-s: Donetti, L.; Gamiz, F.; Roldan, J. B.; Godoy, A.
    Source: JOURNAL OF APPLIED PHYSICS 100 1 -1 -1 2006
  • On the gate capacitance limits of nanoscale DG and FD SOI MOSFETs
    Author-s: Ge, LX; Gamiz, F; Workman, GO; Veeraraghavan, S
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 53 4 753 758 2006
  • Papers selected from the Eurosoi Workshop - Foreword
    Author-s: Gamiz, F
    Source: SOLID-STATE ELECTRONICS 49 9 1453 1453 2005
  • A comprehensive study of carrier velocity modulation in DGSOI transistors
    Author-s: Sampedro, C; Gamiz, F; Godoy, A; Prunnila, M; Ahopelto, J
    Source: SOLID-STATE ELECTRONICS 49 9 1504 1509 1st EUROSOI Workshop JAN 19-21, 2005 Granada, Granada 2005
  • Electron mobility and magneto transport study of ultra-thin channel double-gate Si MOSFETs
    Author-s: Prunnila, M; Ahopelto, J; Gamiz, F
    Source: SOLID-STATE ELECTRONICS 49 9 1516 1521 1st EUROSOI Workshop JAN 19-21, 2005 Granada, Granada 2005
  • Effects of nonparabolic bands in quantum wires
    Author-s: Godoy, A; Yang, ZC; Ravaioli, U; Gamiz, F
    Source: JOURNAL OF APPLIED PHYSICS 98 1 -1 -1 2005
  • Implications of nonparabolicity, warping, and inelastic phonon scattering on hole transport in pure Si and Ge within the effective mass framework
    Author-s: Rodriguez-Bolivar, S; Gomez-Campos, FM; Gamiz, F; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 97 1 -1 -1 2005
  • Accurate Deterministic Numerical Simulation of p-n Junctions
    Author-s: Gonzalez, P.; Godoy, A.; Gamiz, F.; Carrillo, J. A.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 3 3-4 235 238 2004
  • Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs
    Author-s: Gamiz, F.; Godoy, A.; Sampedro, C.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 3 3-4 295 298 2004
  • Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs
    Author-s: Roldan, JB; Gamiz, F
    Source: SOLID-STATE ELECTRONICS 48 8 1347 1355 2004
  • Double gate silicon on insulator transistors. A Monte Carlo study
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Carceller, JE; Cartujo, P
    Source: SOLID-STATE ELECTRONICS 48 6 937 945 2004
  • Image and exchange-correlation effects in double gate silicon-on-insulator transistors
    Author-s: Gamiz, F; Cartujo-Cassinello, P; Jimenez-Molinos, F; Carceller, JE; Cartujo, P
    Source: MICROELECTRONIC ENGINEERING 72 1-4 374 378 13th Biennial Conference on Insulating Films on Se JUN 18-20, 2003 Barcelona, Barcelona 2004
  • A comprehensive study of velocity overshoot effects in double gate silicon on insulator transistors
    Author-s: Gamiz, F
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19 3 393 398 2004
  • Temperature behaviour of electron mobility in double-gate silicon on insulator transistors
    Author-s: Gamiz, F
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19 1 113 119 2004
  • Comparison Between Non-Equilibrium Green!s Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure
    Author-s: Guan, D.; Godoy, A.; Ravaioli, U.; Gamiz, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 2 2-4 335 339 2003
  • Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate
    Author-s: Gamiz, F; Fischetti, MV
    Source: APPLIED PHYSICS LETTERS 83 23 4848 4850 2003
  • Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Roldan, JB; Carceller, JE; Cartujo, P
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 18 11 927 937 2003
  • Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Cartujo-Cassinello, P; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 94 9 5732 5741 2003
  • Scattering of electrons in silicon inversion layers by remote surface roughness
    Author-s: Gamiz, F; Roldan, JB
    Source: JOURNAL OF APPLIED PHYSICS 94 1 392 399 2003
  • Strained-Si on Si1-xGex MOSFET mobility model
    Author-s: Roldan, JB; Gamiz, F; Cartujo-Cassinello, R; Cartujo, P; Carceller, JE; Roldan, A
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 50 5 1408 1411 2003
  • Monte Carlo simulation of electron mobility in silicon-on-insulator structures
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Jimenez-Molinos, F
    Source: SOLID-STATE ELECTRONICS 46 11 1715 1721 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2002
  • Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
    Author-s: Gamiz, F; Cartujo-Cassinello, P; Roldan, JB; Jimenez-Molinos, F
    Source: JOURNAL OF APPLIED PHYSICS 92 1 288 295 2002
  • Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility
    Author-s: Gamiz, F; Roldan, JB; Godoy, A
    Source: APPLIED PHYSICS LETTERS 80 22 4160 4162 2002
  • Electron transport in ultrathin double-gate SOI devices
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Jimenez-Molinos, F; Carceller, JE
    Source: MICROELECTRONIC ENGINEERING 59 1-4 423 427 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2001
  • Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P; Godoy, A
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 48 10 2447 2449 2001
  • Improving strained-Si on Si1-xGex deep submicron MOSFETs performance by means of a stepped doping profile
    Author-s: Gamiz, F; Roldan, JB; Kosina, H; Grasser, T
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 48 9 1878 1884 2001
  • Special issue - Proceedings of the EUROSOI-2000 (European Meeting on Silicon-On-Insulator Devices) - Granada. Spain - 26-27 October 2000 - Foreword
    Author-s: Gamiz, F; Lopez-Villanueva, JA
    Source: SOLID-STATE ELECTRONICS 45 4 539 539 2001
  • Electron transport in silicon-on-insulator devices
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Carceller, JE; Cartujo, P; Jimenez-Molinos, F
    Source: SOLID-STATE ELECTRONICS 45 4 613 620 European Meeting on Silicon-on-Insulator Devices ( OCT 26-27, 2000 GRANADA, GRANADA 2001
  • A simple subthreshold swing model for short channel MOSFETs
    Author-s: Godoy, A; Lopez-Villanueva, JA; Jimenez-Tejada, JA; Palma, A; Gamiz, F
    Source: SOLID-STATE ELECTRONICS 45 3 391 397 2001
  • Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Cartujo-Cassinello, P; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF APPLIED PHYSICS 89 3 1764 1770 2001
  • Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo-Cassinello, P
    Source: IEEE ELECTRON DEVICE LETTERS 21 5 239 241 2000
  • Effects of the inversion-layer centroid on the performance of double-gate MOSFET's
    Author-s: Lopez-Villanueva, JA; Cartujo-Cassinello, P; Gamiz, F; Banqueri, J; Palma, AJ
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 47 1 141 146 2000
  • Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Cartujo-Cassinello, P; Carceller, JE; Lopez-Villanueva, JA; Rodriguez, S
    Source: JOURNAL OF APPLIED PHYSICS 86 11 6269 6275 1999
  • A model for the drain current of deep submicrometer MOSFET!s including electron-velocity overshoot
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 10 2249 2251 1998
  • I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 8 P3 21 24 3rd European Workshop on Low Temperature Electroni JUN 24-26, 1998 SAN MINIATO, SAN MINIATO 1998
  • Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 8 P3 57 60 3rd European Workshop on Low Temperature Electroni JUN 24-26, 1998 SAN MINIATO, SAN MINIATO 1998
  • Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET!s
    Author-s: Gamiz, F; Lopez-Villanueva, JA; Roldan, JB; Carceller, JE; Cartujo, P
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 5 1122 1126 1998
  • Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 83 9 4802 4806 1998
  • An analytical model for the electron velocity overshoot effects in strained-Si on SixGe1-x MOSFET!s
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 4 993 995 1998
  • Understanding the improved performance of strained Si/Si1-xGex channel MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 12 1603 1608 1997
  • Effects of the inversion layer centroid on MOSFET behavior
    Author-s: LopezVillanueva, JA; CartujoCasinello, P; Banqueri, J; Gamiz, F; Rodriguez, S
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 11 1915 1922 1997
  • Study of the effects of a stepped doping profile in short-channel MOSFET!s
    Author-s: LopezVillanueva, JA; Gamiz, F; Roldan, JB; Ghailan, Y; Carceller, JE; Cartujo, P
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 9 1425 1431 1997
  • A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFET!s
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 9 1447 1453 1997
  • A detailed simulation study of the performance of beta-silicon carbide MOSFETs and a comparison with their silicon counterparts
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 6 655 661 1997
  • Modeling effects of electron-velocity overshoot in a MOSFET
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 5 841 846 1997
  • The dependence of the electron mobility on the longitudinal electric field in MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE; Cartujo, P
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 3 321 330 1997
  • Electron transport properties of quantized silicon carbide inversion layers
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Cartujo, P
    Source: JOURNAL OF ELECTRONIC MATERIALS 26 3 203 207 38th Electronic Materials Conference (EMC) JUN 26-28, 1996 UNIV OF CALIF AT SANTA BARBARA, UNIV OF CALIF AT SANTA BARBARA, UNIV OF CALIF AT SANTA BARBARA 1997
  • Influence of the doping profile on electron mobility in a MOSFET
    Author-s: Gamiz, F; LopezVillanueva, JA; Roldan, JB; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 43 11 2023 2025 1996
  • A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1-xGex channel MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 80 9 5121 5128 1996
  • Electron velocity saturation in quantized silicon carbide inversion layers
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE
    Source: APPLIED PHYSICS LETTERS 69 15 2219 2221 1996
  • Semi-empirical model of electron mobility in MOSFETS in strong inversion regime
    Author-s: Banqueri, J; LopezVillanueva, J; Gamiz, F; Palma, A; Carceller, JE
    Source: IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS 143 4 202 206 1996
  • Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Cartujo, P
    Source: APPLIED PHYSICS LETTERS 69 6 797 799 1996
  • A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region
    Author-s: Banqueri, J; LopezVillanueva, JA; Gamiz, F; Carceller, JE; LoraTamayo, E; Lozano, M
    Source: SOLID-STATE ELECTRONICS 39 6 875 883 1996
  • Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 6 C3 13 18 2nd European Workshop on Low Temperature Electroni JUN 26-28, 1996 LOUVAIN, LOUVAIN 1996
  • Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE; Cartujo, P
    Source: JOURNAL DE PHYSIQUE IV 6 C3 87 92 2nd European Workshop on Low Temperature Electroni JUN 26-28, 1996 LOUVAIN, LOUVAIN 1996
  • INFLUENCE OF NEGATIVELY AND POSITIVELY CHARGED SCATTERING CENTERS ON ELECTRON-MOBILITY IN SEMICONDUCTOR INVERSION-LAYERS - A MONTE-CARLO STUDY
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA
    Source: JOURNAL OF APPLIED PHYSICS 78 3 1787 1792 1995
  • ELECTRON TRAPPING AND DETRAPPING IN NEAR-INTERFACIAL TRAPS DURING FOWLER-NORDHEIM TUNNELING INJECTION AT 77 K
    Author-s: LOPEZVILLANUEVA, JA; CARCELLER, JE; GAMIZ, F; BANQUERI, J
    Source: MICROELECTRONIC ENGINEERING 28 1-4 317 320 9th Biennial Conference on Insulating Films on Sem JUN 07-10, 1995 VILLARD DE LANS, FRANCE 1995
  • INFLUENCE OF THE OXIDE-CHARGE DISTRIBUTION PROFILE ON ELECTRON-MOBILITY IN MOSFETS
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA; BANQUERI, J; CARCELLER, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 42 5 999 1004 1995
  • OXIDE CHARGE SPACE CORRELATION IN INVERSION-LAYERS .2. 3-DIMENSIONAL OXIDE CHARGE-DISTRIBUTION
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA; BANQUERI, J; GHAILAN, Y; CARCELLER, JE
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 10 5 592 600 1995
  • EFFECTS OF BULK-IMPURITY AND INTERFACE-CHARGE ON THE ELECTRON-MOBILITY IN MOSFETS
    Author-s: GAMIZ, F; BANQUERI, J; CARCELLER, JE; LOPEZVILLANUEVA, JA
    Source: SOLID-STATE ELECTRONICS 38 3 611 614 1995
  • UNIVERSALITY OF ELECTRON-MOBILITY CURVES IN MOSFETS - A MONTE-CARLO STUDY
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA; BANQUERI, J; CARCELLER, JE; CARTUJO, P
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 42 2 258 265 1995
  • A MODEL FOR THE QUANTIZED ACCUMULATION LAYER IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    Author-s: LOPEZVILLANUEVA, JA; MELCHOR, I; GAMIZ, F; BANQUERI, J; JIMENEZTEJADA, JA
    Source: SOLID-STATE ELECTRONICS 38 1 203 210 1995
  • EFFECTS OF OXIDE-CHARGE SPACE CORRELATION ON ELECTRON-MOBILITY IN INVERSION-LAYERS
    Author-s: GAMIZ, F; MELCHOR, I; PALMA, A; CARTUJO, P; LOPEZVILLANUEVA, JA
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 9 5 1102 1107 1994
  • INFLUENCE OF THE INTERFACE-STATE DENSITY ON THE ELECTRON-MOBILITY IN SILICON INVERSION-LAYERS
    Author-s: BANQUERI, J; GAMIZ, F; CARCELLER, JE; CARTUJO, P; LOPEZVILLANUEVA, JA
    Source: JOURNAL OF ELECTRONIC MATERIALS 22 9 1159 1163 1993
  • On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
    Author-s: Thomas, S. M.; Prest, M. J.; Whall, T. E.; Leadley, D. R.; Toniutti, P.; Conzatti, F.; Esseni, D.; Donetti, L.; Gamiz, F.; Lander, R. J. P.; Vellianitis, G.; Hellstrom, P. -E.; Ostling, M.
    Source: JOURNAL OF APPLIED PHYSICS 110 12 -1 -1 2011
  • Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
    Author-s: Marin, E. G.; Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Sanchez-Moreno, P.; Gamiz, F.
    Source: JOURNAL OF APPLIED PHYSICS 112 8 -1 -1 2012
  • Surface roughness scattering model for arbitrarily oriented silicon nanowires
    Author-s: Tienda-Luna, Isabel M.; Ruiz, F. G.; Godoy, A.; Biel, B.; Gamiz, F.
    Source: JOURNAL OF APPLIED PHYSICS 110 8 -1 -1 2011
  • An in-depth simulation study of thermal reset transitions in resistive switching memories
    Author-s: Villena, M. A.; Jimenez-Molinos, F.; Roldan, J. B.; Sune, J.; Long, S.; Lian, X.; Gamiz, F.; Liu, M.
    Source: JOURNAL OF APPLIED PHYSICS 114 14 -1 -1 2013
  • Effect of confined acoustic phonons on the electron mobility of rectangular nanowires
    Author-s: Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Donetti, L.; Martinez-Blanque, C.; Gamiz, F.
    Source: APPLIED PHYSICS LETTERS 103 16 -1 -1 2013
  • Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
    Author-s: Donetti, L.; Gamiz, F.; Thomas, S.; Whall, T. E.; Leadley, D. R.; Hellstrom, P. -E.; Malm, G.; Ostling, M.
    Source: JOURNAL OF APPLIED PHYSICS 110 6 -1 -1 2011
  • Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
    Author-s: Padilla, J. L.; Alper, C.; Gamiz, F.; Ionescu, A. M.
    Source: APPLIED PHYSICS LETTERS 105 8 -1 -1 2014
  • Two-band k . p model for Si-(110) electron devices
    Author-s: Donetti, Luca; Gamiz, Francisco; Biel, Blanca; Sampedro, Carlos
    Source: JOURNAL OF APPLIED PHYSICS 114 7 -1 -1 2013
  • Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
    Author-s: Ohata, A.; Rodriguez, N.; Navarro, C.; Donetti, L.; Gamiz, F.; Fenouillet-Beranger, F. C.; Cristoloveanu, S.
    Source: JOURNAL OF APPLIED PHYSICS 113 14 -1 -1 2013
  • On the enhanced electron mobility in strained-silicon inversion layers
    Author-s: Fischetti, MV; Gamiz, F; Hansch, W
    Source: JOURNAL OF APPLIED PHYSICS 92 12 7320 7324 2002
  • Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors
    Author-s: Prunnila, M; Ahopelto, J; Henttinen, K; Gamiz, F
    Source: APPLIED PHYSICS LETTERS 85 22 5442 5444 2004
  • Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Author-s: Rodriguez, N.; Cristoloveanu, S.; Gamiz, F.
    Source: JOURNAL OF APPLIED PHYSICS 102 8 -1 -1 2007
  • Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers
    Author-s: Gamiz, F; Cartujo-Cassinello, P; Jimenez-Molinos, F; Carceller, JE; Cartujo, P
    Source: APPLIED PHYSICS LETTERS 83 15 3120 3122 2003
  • Coulomb scattering in high-kappa gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
    Author-s: Jimenez-Molinos, F.; Gamiz, F.; Donetti, L.
    Source: JOURNAL OF APPLIED PHYSICS 104 6 -1 -1 2008
  • Influence of technological parameters on the behavior of the hole effective mass in SiGe structures
    Author-s: Rodriguez, S; Gamiz, F; Palma, A; Cartujo, P; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 88 4 1978 1982 2000
  • The effect of surface roughness scattering on hole mobility in double gate silicon-on-insulator devices
    Author-s: Donetti, Luca; Gamiz, Francisco; Rodriguez, Noel; Godoy, Andres; Sampedro, Carlos
    Source: JOURNAL OF APPLIED PHYSICS 106 2 -1 -1 2009
  • Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Jimenez-Molinos, F; Roldan, JB; Cartujo-Cassinello, P
    Source: APPLIED PHYSICS LETTERS 80 20 3835 3837 2002
  • Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors
    Author-s: Sampedro, C; Gamiz, F; Godoy, A; Prunnila, M; Ahopelto, J
    Source: APPLIED PHYSICS LETTERS 86 20 -1 -1 2005
  • Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
    Author-s: Gamiz, F; Fischetti, MV
    Source: JOURNAL OF APPLIED PHYSICS 89 10 5478 5487 2001
  • Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors
    Author-s: Gamiz, F; Roldan, JB; Carceller, JE; Cartujo, P
    Source: APPLIED PHYSICS LETTERS 82 19 3251 3253 2003
  • Direct and trap-assisted elastic tunneling through ultrathin gate oxides
    Author-s: Jimenez-Molinos, F; Gamiz, F; Palma, A; Cartujo, P; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 91 8 5116 5124 2002
  • Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K
    Author-s: Prunnila, M; Ahopelto, J; Gamiz, F
    Source: APPLIED PHYSICS LETTERS 84 13 2298 2300 2004
  • Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
    Author-s: Donetti, L; Gamiz, F; Rodriguez, N; Jimenez, F; Sampedro, C
    Source: APPLIED PHYSICS LETTERS 88 12 -1 -1 2006
  • Velocity overshoot in ultrathin double-gate silicon-on-insulator transistors
    Author-s: Gamiz, F
    Source: APPLIED PHYSICS LETTERS 84 2 299 301 2004
  • Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 86 12 6854 6863 1999
  • A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 81 10 6857 6865 1997
  • Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors
    Author-s: Godoy, A; Gamiz, F; Palma, A; JimenezTejada, JA; Carceller, JE
    Source: APPLIED PHYSICS LETTERS 70 16 2153 2155 1997
  • A COMPARISON OF MODELS FOR PHONON-SCATTERING IN SILICON INVERSION-LAYERS
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA
    Source: JOURNAL OF APPLIED PHYSICS 77 8 4128 4129 1995
  • DENSITY-OF-STATES OF A 2-DIMENSIONAL ELECTRON-GAS INCLUDING NONPARABOLICITY
    Author-s: LOPEZVILLANUEVA, JA; GAMIZ, F; MELCHOR, I; JIMENEZTEJADA, JA
    Source: JOURNAL OF APPLIED PHYSICS 75 8 4267 4269 1994
  • A COMPREHENSIVE MODEL FOR COULOMB SCATTERING IN INVERSION-LAYERS
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA; JIMENEZTEJADA, JA; MELCHOR, I; PALMA, A
    Source: JOURNAL OF APPLIED PHYSICS 75 2 924 934 1994
  • Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic
    Author-s: Navarro, Carlos; Marquez, Carlos; Navarro, Santiago; Gamiz, Francisco
    Source: IEEE ACCESS 8 132376 132381 2020
  • Active Radiation-Hardening Strategy in Bulk FinFETs
    Author-s: Calomarde, Antonio; Rubio, Antonio; Moll, Francesc; Gamiz, Francisco
    Source: IEEE ACCESS 8 201441 201449 2020
  • InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
    Author-s: Navarro, Carlos; Navarro, Santiago; Marquez, Carlos; Donetti, Luca; Sampedro, Carlos; Karg, Siegfried; Riel, H.; Gamiz, Francisco
    Source: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 1 884 892 2018
  • Electrical characterization and conductivity optimization of laser reduced graphene oxide on insulator using point-contact methods
    Author-s: Marquez, Carlos; Rodriguez, Noel; Ruiz, Rafael; Gamiz, Francisco
    Source: RSC ADVANCES 6 52 46231 46237 2016
  • Competitive 1T-DRAM in 28 nm FDSOI Technology for Low-Power Embedded Memory
    Author-s: El Dirani, H.; Bawedin, M.; Lee, K.; Parihar, M.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Kim, Y-T.; Ferrari, P.; Cristoloveanu, S.
    Source: 2016 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) 0 0 IEEE SOI-3D-Subthreshold Microelectronics Technolo OCT 10-13, 2016 Burlingame, CA 2016
  • Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs
    Author-s: Velayudhan, V.; Gamiz, F.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Aymerich, X.
    Source: MICROELECTRONICS RELIABILITY 53 9-11 1243 1246 2013
  • Effective Capacitance Area for Pseudo-MOSFET Characterization of Bare SOI Wafers by Split-C(V) Measurements
    Author-s: Fernandez, Cristina; Rodriguez, Noel; Ohata, Akiko; Gamiz, Francisco; Cristoloveanu, Sorin
    Source: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 2 12 529 533 2013
  • SELECTED PAPERS FROM THE ESSDERC 2010 CONFERENCE Foreword
    Author-s: Gamiz, Francisco; Godoy, Andres
    Source: SOLID-STATE ELECTRONICS 65-66 1 1 2011
  • Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Valin, R.; Garcia-Loureiro, A.; Rodriguez, N.; Tienda-Luna, I. M.; Martinez-Carricondo, F.; Biel, B.
    Source: SOLID-STATE ELECTRONICS 65-66 88 93 40th European Solid-State Device Research Conferen SEP 14-16, 2010 Seville, Seville 2011
  • Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices
    Author-s: Gehring, A; Jimenez-Molinos, F; Kosina, H; Palma, A; Gamiz, F; Selberherr, S
    Source: MICROELECTRONICS RELIABILITY 43 9-11 1495 1500 14th European Symposium on Raliability of Electron OCT 07-10, 2003 BORDEAUX, BORDEAUX 2003
  • Low temperature transport properties of thin SOI MOSFETs
    Author-s: Prunnila, M; Ahopelto, J; Gamiz, F
    Source: SUPERLATTICES AND MICROSTRUCTURES 34 3-6 341 345 6th International Conference on New Phenomena in M DEC 01-05, 2003 Maui, Maui 2003
  • Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
    Author-s: Jimenez-Molinos, F; Palma, A; Gamiz, F; Banqueri, J; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 90 7 3396 3404 2001
  • A computational study of the strained-Si MOSFET: a possible alternative for the next century electronics industry
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE; Cartujo, P
    Source: COMPUTER PHYSICS COMMUNICATIONS 121 547 549 Europhysics Conference on Computational Physics (C SEP 02-05, 1998 GRANADA, GRANADA 1999
  • Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 3 1538 1540 16th North American Conference on Molecular Beam E OCT 05-08, 1997 UNIV MICHIGAN, UNIV MICHIGAN, UNIV MICHIGAN 1998
  • Electron mobility in quantized beta-SiC inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 3 1631 1633 16th North American Conference on Molecular Beam E OCT 05-08, 1997 UNIV MICHIGAN, UNIV MICHIGAN, UNIV MICHIGAN 1998
  • Monte Carlo simulation of a submicron MOSFET including inversion layer quantization
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: VLSI DESIGN 6 1-4 287 290 4th International Workshop on Computational Electr OCT 31-NOV 01, 1995 TEMPE, TEMPE 1998
  • Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors
    Author-s: Godoy, A; Gamiz, F; Palma, A; JimenezTejada, JA; Banqueri, J; LopezVillanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 82 9 4621 4628 1997
  • AN ANALYTICAL EXPRESSION FOR PHONON-LIMITED ELECTRON-MOBILITY IN SILICON-INVERSION LAYERS
    Author-s: GAMIZ, F; BANQUERI, J; MELCHOR, I; CARCELLER, JE; CARTUJO, P; LOPEZVILLANUEVA, JA
    Source: JOURNAL OF APPLIED PHYSICS 74 5 3289 3292 1993

Conferences in ISI CPCI-Science

  • Low-Power Z(2)-FET Capacitorless 1T-DRAM
    Author-s: Parihar, M. S.; Lee, K. H.; Dirani, H. E.; Navarro, C.; Lacord, J.; Martinie, S.; Barbe, J. -Ch.; Fonteneau, P.; Galy, Ph.; Le Royer, C.; Mescot, X.; Gamiz, F.; Cheng, B.; Asenov, A.; Taur, Y.; Bawedin, M.; Cristoloveanu, S.
    Source: 2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW) 103 106 9th IEEE International Memory Workshop (IMW) MAY 14-17, 2017 Monterey, CA 2017
  • Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET
    Author-s: Padilla, J. L.; Alper, C.; Gamiz, F.; Ionescu, A. M.
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 20 23 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • Electrical Characterization of Random Telegraph Noise in Back-Biased Ultrathin Silicon-On-Insulator MOSFETs
    Author-s: Marquez, Carlos; Rodriguez, Noel; Gamiz, Francisco; Ohata, Akiko
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 40 43 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • Capacitor-less memory: advances and challenges
    Author-s: Gamiz, Francisco
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 68 71 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • Confinement Orientation Effects in S/D tunneling
    Author-s: Medina-Bailon, C.; Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 100 103 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • On the influence of the back-gate bias on InGaAs Trigate MOSFETs
    Author-s: Marin, Enrique G.; Ruiz, Francisco G.; Godoy, Andres; Gonzalez-Medina, Jose M.; Tienda-Luna, I. M.; Toral, Alejandro; Gamiz, Francisco
    Source: 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SI 230 233 2nd Joint International EUROSOI Workshop and Inter JAN 25-27, 2016 TU Wien, Inst Microelectron, Vienna, AUSTRIA 2016
  • Multi-Subband Ensemble Monte Carlo Study of Band-to-Band Tunneling in Silicon-based TFETs
    Author-s: Medina-Bailon, C.; Sampedro, C.; Padilla, J. L.; Gamiz, F.; Godoy, A.; Donetti, L.
    Source: 2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) 253 256 International Conference on Simulation of Semicond SEP 06-08, 2016 Nuremberg, GERMANY 2016
  • MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs
    Author-s: Gamiz, Francisco; Sampedro, Carlos; Donetti, Luca; Godoy, Andres
    Source: FRONTIERS IN ELECTRONICS: ADVANCED MODELING OF NANOSCALE ELECTRON DEVICES 54 1 32 2014
  • Non-parabolicity in Si-(110) nMOSFETs: analytic and numerical results for the two-band k . p model
    Author-s: Donetti, Luca; Gamiz, Francisco; Biel, Blanca; Sampedro, Carlos
    Source: 2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) 110 113 14th International Conference on Ultimate Integrat MAR 19-21, 2013 Univ Warwick, Univ Warwick, Univ Warwick 2013
  • Analytical Drain Current Model using Temperature dependence model in nanoscale Double-Gate (DG) MOSFETs
    Author-s: Cheralathan, M.; Sampedro, C.; Gamiz, F.; Iniguez, B.
    Source: 2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) 142 145 14th International Conference on Ultimate Integrat MAR 19-21, 2013 Univ Warwick, Univ Warwick, Univ Warwick 2013
  • Ab initio validation of continuum models for Si/SiO2 interfaces
    Author-s: Biel, Blanca; Donetti, Luca; Godoy, Andres; Gamiz, Francisco J.
    Source: 2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) 166 169 14th International Conference on Ultimate Integrat MAR 19-21, 2013 Univ Warwick, Univ Warwick, Univ Warwick 2013
  • Determination of Effective Capacitance Area for Pseudo-MOSFET Based Characterization of Bare SOI Wafers by Split-C(V) Measurements
    Author-s: Fernandez, C.; Rodriguez, N.; Ohata, A.; Diab, A.; Gamiz, F.; Cristoloveanu, S.
    Source: ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 16 53 5 209 217 16th International Symposium on Semiconductor-on-I MAY 12-16, 2013 Toronto, Toronto 2013
  • Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs
    Author-s: Gamiz, F.; Donetti, L.; Rodriguez, N.; Sampedro, C.; Faynot, O.; Barbe, J. C.
    Source: IEEE INTERNATIONAL SOI CONFERENCE -1 -1 IEEE International SOI Conference OCT 01-04, 2012 Napa, Napa 2012
  • Innovative Capacitorless SOI DRAMs
    Author-s: Cristoloveanu, S.; Bawedin, M.; Wan, J.; Chang, S-J.; Navarro, C.; Zaslavsky, A.; Le Royer, C.; Andrieu, F.; Rodriguez, N.; Gamiz, F.
    Source: IEEE INTERNATIONAL SOI CONFERENCE -1 -1 IEEE International SOI Conference OCT 01-04, 2012 Napa, Napa 2012
  • Experimental Demonstration of A2RAM memory cell on SOI
    Author-s: Rodriguez, N.; Navarro, C.; Gamiz, F.; Andrieu, F.; Faynot, O.; Cristoloveanu, S.
    Source: IEEE INTERNATIONAL SOI CONFERENCE -1 -1 IEEE International SOI Conference OCT 01-04, 2012 Napa, Napa 2012
  • 3D Trigate 1T-DRAM memory cell for 2x nm nodes
    Author-s: Gamiz, Francisco; Rodriguez, Noel; Cristoloveanu, Sorin
    Source: 2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) -1 -1 4th IEEE International Memory Workshop (IMW) MAY 20-23, 2012 Milano, Milano 2012
  • Ultrathin n-Channel and p-Channel SOI MOSFETs
    Author-s: Gamiz, F.; Donetti, L.; Sampedro, C.; Godoy, A.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: SEMICONDUCTOR-ON-INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONS 169 185 2011
  • Properties of 22nm node extremely-thin-SOI MOSFETs
    Author-s: Rodriguez, N.; Andrieu, F.; Navarro, C.; Faynot, O.; Gamiz, F.; Cristoloveanu, S.
    Source: 2011 IEEE INTERNATIONAL SOI CONFERENCE -1 -1 IEEE International SOI Conference OCT 03-06, 2011 Tempe, Tempe 2011
  • Self-Heating Effects in ultrathin FD SOI transistors
    Author-s: Rodriguez, N.; Navarro, C.; Andrieu, F.; Faynot, O.; Gamiz, F.; Cristoloveanu, S.
    Source: 2011 IEEE INTERNATIONAL SOI CONFERENCE -1 -1 IEEE International SOI Conference OCT 03-06, 2011 Tempe, Tempe 2011
  • New Capacitorless Dynamic Memory Compatible with SOI and Bulk CMOS
    Author-s: Rodriguez, N.; Gamiz, F.; Cristoloveanu, S.
    Source: ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15 35 5 195 200 15th International Symposium on Advanced Semicondu MAY 01-06, 2011 Montreal, Montreal 2011
  • NEW CONCEPTS FOR 1T-DRAMS: OVERCOMING THE SCALING LIMITS
    Author-s: Rodriguez, Noel; Cristoloveanu, Sorin; Gamiz, Francisco
    Source: 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2 11 14 34th International Semiconductor Conference (CAS) OCT 17-19, 2011 Natl Inst Res & Dev Microtechnologies (IMT), Natl Inst Res & Dev Microtechnologies (IMT), Natl Inst 2011
  • CHARACTERIZATION, MODELLING AND SIMULATION OF SUB-45NM SOI DEVICES
    Author-s: Rodriguez, Noel; Gamiz, Francisco; Cristoloveanu, Sorin
    Source: CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS 57 63 32nd International Semiconductor Conference OCT 12-14, 2009 Sinaia, Sinaia 2009
  • Ultrathin Body Effects in Multiple-Gate SOI Transistors
    Author-s: Gamiz, F.; Donetti, L.; Sampedro, C.; Godoy, A.; Rodriguez, N.
    Source: ULSI PROCESS INTEGRATION 6 25 7 91 98 6th Symposium on ULSI Process Integration held at OCT 04-09, 2009 Vienna, Vienna 2009
  • A revisited pseudo-MOSFET model for ultrathin SOI films
    Author-s: Rodriguez, N.; Cristoloveanu, S.; Gamiz, F.
    Source: 2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS 65 66 IEEE International SOI Conference OCT 06-09, 2008 New Platz, New Platz 2008
  • Fully self-consistent k . p solver and Monte Carlo simulator for hole inversion layers
    Author-s: Donetti, Luca; Gamiz, Francisco; Godoy, Andres; Rodriguez, Noel
    Source: ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 254 257 38th European Solid-State Device Research Conferen SEP 15-19, 2008 Edinburgh, Edinburgh 2008
  • Mobility in Multigate MOSFETs
    Author-s: Gamiz, Francisco; Godoy, Andres
    Source: FINFETS AND OTHER MULTI-GATE TRANSISTORS 191 256 2008
  • Electron transport in silicon-on-insulator nanodevices
    Author-s: Gamiz, F.; Godoy, A.; Sampedro, C.
    Source: Nanoscaled Semiconductor-on-Insulator Structures and Devices 303 322 NATO Advanced Research Workshop on Nanoscaled Semi OCT 15-19, 2006 Big Yalta, Big Yalta 2007
  • Anisotropy of electron mobility in arbitrarily oriente FinFETs
    Author-s: Gamiz, Francisco; Donetti, Luca; Rodriguez, Noel
    Source: ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 378 381 37th European Solid-State Device Research Conferen SEP 11-13, 2007 Technische Univ Munchen, Technische Univ Munchen, Technische Univ Munchen 2007
  • Geometric Magnetoresistance and Mobility Behavior in Single-Gate and Double-Gate SOI Devices
    Author-s: Rodriguez, N.; Doneth, L.; Gamiz, F.; Cristoloveanu, S.
    Source: 2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS 51 52 IEEE International SOI Conference OCT 01-04, 2007 Indian Wells, Indian Wells 2007
  • Deterministic numerical simulation of 1d kinetic descriptions of bipolar electron devices
    Author-s: Gonzalez, P.; Carrillo, J. A.; Gamiz, F.
    Source: Scientific Computing in Electrical Engineering 9 339 344 5th International Conference on Scientific Computi SEP 05-09, 2004 Capo d Orlando, Capo d Orlando 2006
  • Non-parabolic model for the solution of 2-d quantum transverse states applied to narrow conduction channel simulation
    Author-s: Yang, Z.; Godoy, A.; Ravaioli, U.; Gamiz, F.
    Source: Nonequilibrium Carrier Dynamics in Semiconductors Proceedings 110 365 368 14th International Conference on Nonequilibrium Ca JUL 25-29, 2005 Chicago, Chicago 2006
  • Electron transport in silicon inversion slabs of nanometric thickness
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Sampedro, C
    Source: Nanotechnology II 5838 199 207 Conference on Nanotechnology II MAY 09-11, 2005 Seville, Seville 2005
  • Monte Carlo simulation of electron mobility in double gate SOI-MOSFETs.
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE
    Source: PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES 97 23 233 238 8th International Symposium on Silicon-On-Insulato AUG 31-SEP 05, 1997 PARIS, PARIS 1997

Book chapters in ISI

  • Fabrication and Validation of A2RAM Memory Cells on SOI and Bulk Substrates
    Author-s: Rodriguez, N.; Gamiz, F.; Marquez, C.; Navarro, C.; Andrieu, F.; Faynot, O.; Cristoloveanu, S.
    Source: 2013 5TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) 135 138 5th IEEE International Memory Workshop (IMW) MAY 26-29, 2013 Monterey, Monterey 2013
  • HOME-MADE SOFTWARE FOR AUTONOMOUS EDUCATION OF MICROWAVE AMPLIFIERS
    Author-s: Rodriguez, Noel; Caballero, Katia; Gamiz, Francisco; Ruiz, Francisco G.; Tienda, Isabel; Donetti, Luca; Sampedro, Carlos
    Source: 2011 4TH INTERNATIONAL CONFERENCE OF EDUCATION, RESEARCH AND INNOVATION (ICERI) 2754 2758 4th International Conference of Education, Researc NOV 14-16, 2011 Madrid, Madrid 2011
  • Effects of deviations in the cross-section of square Nanowires
    Author-s: Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Donetti, L.; Gamiz, F.
    Source: 2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) 97 100 14th International Workshop on Computational Elect OCT 26-29, 2010 Pisa, Pisa 2010
  • Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-k Gate Stacks
    Author-s: Bufler, F. M.; Aubry-Fortuna, V.; Bournel, A.; Braccioli, M.; Dollfus, P.; Esseni, D.; Fiegna, C.; Gamiz, F.; De Michielis, M.; Palestri, P.; Saint-Martin, J.; Sampedro, C.; Sangiorgi, E.; Selmi, L.; Toniutti, P.
    Source: 2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) 319 322 14th International Workshop on Computational Elect OCT 26-29, 2010 Pisa, Pisa 2010
  • Quantization Effects in Silicided and Metal Gate MOSFETs.
    Author-s: Rodriguez, N.; Gamiz, F.; Clerc, R.; Sampedro, C.; Godoy, A.; Ghibaudo, G.
    Source: ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON 103 106 10th International Conference on Ultimate Integrat MAR 18-20, 2009 Aachen, Aachen 2009
  • A new inversion charge centroid model for surrounding gate transistors with HfO(2) as gate insulator
    Author-s: Balaguer, M.; Roldan, J. B.; Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Gamiz, F.; Sampedro, C.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 104 107 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Using Grid Infrastructures for a Stationary DGSOI Monte Carlo Simulation
    Author-s: Valin, R.; Aldegunde, M.; Seoane, N.; Garcia-Loureiro, A.; Sampedro, C.; Godoy, A.; Gamiz, F.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 172 175 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Accurate Simulation of the Electron Density of Surrounding Gate Transistors
    Author-s: Ruiz, F. G.; Tienda-Luna, I. M.; Godoy, A.; Sampedro, C.; Gamiz, F.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 192 195 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Quantum Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approach
    Author-s: Sampedro, Carlos; Valin, Raul; Gamiz, Francisco; Garcia-Loureiro, Antonio; Godoy, Andres; Ruiz, F. G.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 196 199 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Effect of arbitrary orientation and strain on Surrounding Gate Transistors
    Author-s: Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Gamiz, F.
    Source: IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS 181 184 13th International Workshop on Computational Elect MAY 27-29, 2009 Beijing, Beijing 2009
  • A-RAM: Novel capacitor-less DRAM memory
    Author-s: Rodriguez, Noel; Cristoloveanu, Sorin; Gamiz, Francisco
    Source: 2009 IEEE INTERNATIONAL SOI CONFERENCE 139 140 IEEE International SOI Conference 2009 OCT 05-08, 2009 Foster City, Foster City 2009
  • Enhanced electron transport by carrier overshoot in ultrascaled Double Gate MOSFETs
    Author-s: Rodriguez, Noel; Donetti, Luca; Sampedro, Carlos; Martinez-Carricondo, Francisco; Gamiz, Francisco
    Source: ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON 203 206 9th International Conference on Ultimate Integrati MAR 13-14, 2008 Univ Udine, Univ Udine, Univ Udine 2008
  • Study of the corner effects on pi-gate SOI MOSFETs
    Author-s: Ruiz, F. G.; Godoy, A.; Gamiz, F.; Donetti, L.; Sampedro, C.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 76 79 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
  • Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. diffusive regime
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Donetti, L.; Ruiz, F. G.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 88 91 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
  • Ballisticity at very low drain bias in DG SOI nano-MOSFETs
    Author-s: Sampedro, Carlos; Gamiz, Francisco; Godoy, Andres; Cristoloveanu, Sorin
    Source: 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 185 186 International Semiconductor Device Research Sympos DEC 12-14, 2007 College Pk, College Pk 2007
  • Double Gate Silicon-on-Insulator transistors: n( )-n( ) gate versus n( )-p( ) gate configuration
    Author-s: Gamiz, F; Roldan, JB; Godoy, J; Jimenez-Molinos, F; Cartujo-Cassinello, G
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 353 356 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • Monte Carlo simulation of velocity modulation transistors
    Author-s: Sampedro, C; Godoy, A; Gamiz, F; Roldan, J; Carceller, JE; Cartujo, P
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 377 380 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • SPICE BSIMSOI enhancement to account for velocity overshoot
    Author-s: Roldan, A; Roldan, JB; Gamiz, F
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 401 404 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • DGSOI devices operated as velocity modulation transistors
    Author-s: Gamiz, F; Sampedro, C; Godoy, A; Prunnila, M; Ahopelto, J
    Source: 2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS 198 199 IEEE International SOI Conference OCT 04-07, 2004 Charleston, Charleston 2004
  • Double gate silicon-on-insulator transistors: n( )-n( ) gate versus n( )-p( ) gate configuration.
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Jimenez-Molinos, F
    Source: ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 173 176 34th European Solid-State Device Research Conferen SEP 21-23, 2004 Leuven, Leuven 2004
  • A compact QM-based mobility model for nanoscale ultra-thin-body CMOS devices
    Author-s: Trivedi, VP; Fossum, JG; Gamiz, F
    Source: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST 763 766 50th IEEE International Electron Devices Meeting DEC 13-15, 2004 San Francisco, San Francisco 2004
  • A new remote Coulomb scattering model for ultrathin oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Roldan, JB
    Source: 2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 47 50 IEEE International Conference on Simulation of Sem SEP 03-05, 2003 BOSTON, BOSTON 2003
  • Mobility enhancement via volume inversion in double-gate MOSFETs
    Author-s: Ge, LX; Fossum, JG; Gamiz, F
    Source: 2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS 153 154 IEEE International SOI Conference SEP 29-OCT 02, 2003 NEWPORT BEACH, NEWPORT BEACH 2003
  • Remote surface roughness scattering in ultrathin-oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Jimenez-Molinos, F; Cartujo-Cassinello, P; Roldan, JB
    Source: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 403 406 33rd European Solid-State Device Research Conferen SEP 16-18, 2003 ESTORIL, ESTORIL 2003
  • Contribution of the carrier number fluctuation and mobility fluctuation on the RTS amplitude in submicron n-MOSFETs.
    Author-s: Godoy, A; Palma, A; Gamiz, F; Jimenez-Tejada, JA; Cartujo, P
    Source: NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE 201 204 14th International Conference on Noise in Physical JUL 14-18, 1997 LOUVAIN, LOUVAIN 1997

European Projects

  • NANOSIL (Silicon-based nanostructures and nanodevices for long term microelectronics applications)
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: FP7-ICT-216171
    Start date: 2008-01-01
    End date: 2011-03-31
    Research Group: TIC-216
    Amount to UGR: 120000.00
    Funding Agency: Comisión Europea - Investigación e Innovación
    Program: Séptimo Programa Marco. 7th European Framework Programme.
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  • EUROSOI+: European platform for low-power applications on Silicon-on Insulator Technology
    Description: In the framework of FP6, the European Commission supported the formation of a European Network on Silicon on Insulator Technology, Devices and Circuits, whose main goal was to create a discussion forum for the exchange of ideas and results on the topic of Silicon-On-Insulator technologies in Europe, and to facilitate the synergy between research groups which enables the use of Silicon-On-Insulator (SOI) technology as an effective tool to push the limits of CMOS and prepare for post-CMOS. Today, EUROSOI network comprises more than 30 partners all over Europe, with expertise in all the fields of the SOI technology. EUROSOI network has already made possible a big part of this path by successfully organizing and achieving during the last three years an important number of events such as the EUROSOI roadmap and state of the art documents, workshops, training events, scientific exchanges. . EUROSOI+ is a coordination action (CA) project aiming at promotion, maintaining, follow-up and upgrading the activities and the network set up by the previous CA project EUROSOI. Important objectives are: i) Creation of a Permanent European School on SOI Technology; ii) Fostering and co-ordinating the initiatives and activities required to successfully face some of the challenges identified and listed in the updated EUROSOI+ Roadmap for the future. Creation of a consortium to elaborate new research project proposals addressing specific challenges identified in the Roadmap; iii) Development of a research-dedicated platform in order to address circuit design aspects, focussing on the advantage of SOI technology for Low Power applications. This platform will provide, through the integration at some point in EUROPRACTICE, prototyping and Multi-Projects-Wafers in SOI open to European research groups and Fabless Semiconductor companies (SMEs) using LETI SOI process. The long-term goal is to make SOI technology reachable to any European research group or fables Semiconductor Company in order to allow any circuit design to have the chance to become a SOI circuit using European technology.
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Participants: Coordinator: UNIVERSITY OF GRANADA (Spain) Participants: UNIVERSITE CATHOLIQUE DE LOUVAIN (Belgium), INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW (Belgium), INSTITUT POLYTECHNIQUE DE GRENOBLE (France), COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France), UNIVERSITY COLLEGE CORK, NATIONAL UNIVERSITY OF IRELAND, CORK (Ireland), CHALMERS TEKNISKA HOEGSKOLA AB (Sweden), UNIVERSITE JOSEPH FOURIER GRENOBLE 1 (France), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
    Reference: FP7-ICT-216373
    Start date: 2008-01-01
    End date: 2011-06-30
    Research Group: TIC-216
    Amount to UGR: 800000.00
    Funding Agency: Comisión Europea - Investigación e Innovación
    Program: Séptimo Programa Marco. 7th European Framework Programme.
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National Projects

  • Familia A-RAM: en busca de la celda de memoria universal
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: TEC2011-28660
    Start date: 2012-01-01
    End date: 2014-12-31
    Research Group: TIC-216
    Amount to UGR: 148830.00
    Funding Agency: Ministerio de Ciencia e Innovación
    Program: Proyectos nacionales de investigación (MICINN)
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  • CARACTERIZACION, SIMULACION Y MODELADO DE TRANSISTORES CMOS NANOMETRICOS DE ULTIMA GENERACION PARA APLICACIONES DE RF Y UWB.
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: TEC2008-06758-C02-01
    Start date: 2009-01-01
    End date: 2012-06-30
    Research Group: TIC-216
    Amount to UGR: 286891.00
    Funding Agency: Ministerio de Ciencia e Innovación
    Program: Proyectos nacionales de investigación (MICINN)
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Local Projects

  • BiocounTIC: Conteo domiciliario de neutrófilos en pacientes con tratamiento de quimioterapia.
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: CEI2014-PBS22
    Start date: 2014-05-28
    End date: 2014-12-31
    Research Group: TIC-216
    Amount to UGR: 21500.00
    Funding Agency: CEI-BioTIC: consorcio UGR, CSIC y Parque Tecnológico de la Salud Granada
    Program: Proyectos para Investigadores Noveles del CEIbioTIC
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  • La celda de memoria A-RAM: La UGR en la frontera del conocimiento TIC
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: 20F12/37
    Start date: 2012-01-01
    End date: 2012-12-31
    Research Group: TIC-216
    Funding Agency: CEI-BioTIC: consorcio UGR, CSIC y Parque Tecnológico de la Salud Granada
    Program: Proyectos de investigación financiados por el CEI BioTIC
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Regional Projects

  • El transistor Pseudo-MOSFET como plataforma CMOS para la detección de agentes patógenos. Aplicación a la detección precoz del virus del papiloma humano (VPH)
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: P12-TIC-1996
    Start date: 2014-01-01
    End date: 2017-01-01
    Research Group: TIC-216
    Amount to UGR: 203194.00
    Funding Agency: Consejería de Economía, Innovación y Ciencia, J.A.
    Program: Proyectos de Excelencia: Proyectos motrices
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  • Desarrollo de Memorias Semiconductoras de un solo Transmisor (1T-Dram) Transferencia
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: P10-TIC-6902
    Start date: 2011-03-15
    End date: 2015-03-14
    Research Group: TIC-216
    Amount to UGR: 160497.00
    Funding Agency: Consejería de Economía, Innovación y Ciencia, J.A.
    Program: Proyectos de Excelencia: Promoción general del conocimiento
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  • Desarrollo de una plataforma multidisciplinar para el estudio de la viabilidad de la tecnología de Silicio sobre Aislante y Silicio tenso sobre aislante en aplicaciones TIC
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: P06-TIC-1899
    Start date: 2007-11-04
    End date: 2010-03-31
    Research Group: TIC-216
    Amount to UGR: 83528.00
    Funding Agency: Consejería de Economía, Innovación y Ciencia, J.A.
    Program: Proyectos de Excelencia: Promoción general del conocimiento
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  • Desarrollo de una plataforma multidisciplinar para el estudio de la viabilidad de la tecnología de Silicio sobre Aislante en aplicaciones TIC
    Principal Investigator: Francisco Jesús Gámiz Pérez
    Reference: P05-TIC-831
    Start date: 2006-01-02
    End date: 2009-02-28
    Research Group: TIC-216
    Amount to UGR: 153600.00
    Funding Agency: Consejería de Economía, Innovación y Ciencia, J.A.
    Program: Proyectos de Excelencia: Promoción general del conocimiento
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Patents and protected results

  • RAM MEMORY POINT WITH A TRANSISTOR
    Inventors: Noel Rodríguez Santiago, Francisco Jesús Gámiz Pérez
    Reference: WO/2013/050707
    Priority date: 2011-10-04
    Applicant: Centre National de la Recherche Scientifique, Universidad de Granada
    Research group: TIC-250,TIC-216
    Scope: mundial
  • RAM Memory Element with one transistor
    Inventors: Noel Rodríguez Santiago, Francisco Jesús Gámiz Pérez, Sorin Cristoloveanu
    Reference: PCT/FR2010/050716
    Priority date: 2009-04-15
    Patent exploitation: ninguna
    Applicant: Centre National de la Recherche Scientifique, Universidad de Granada
    Research group: TIC-250,TIC-216
    Scope: nacional
  • Point mémoire RAM à un transistor
    Inventors: Noel Rodríguez Santiago, Francisco Jesús Gámiz Pérez, Sorin Cristoloveanu
    Reference: FR1052612
    Applicant: Centre National de la Recherche Scientifique, Universidad de Granada
    Research group: TIC-250,TIC-216
    Scope: otro país

Doctoral Dissertations supervised

  • Development of a Near-Field Scanning Microwave Microscopy for Semiconductor Characterization
    Author: Bendehiba Abadlia Bagdad
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2019-07-04
    Supervision: Francisco Jesús Gámiz Pérez
  • Optimization of the Z2-FET Memory Cell for Future Technologies
    Author: Santiago Navarro Moral
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2019-11-25
    Supervision: Francisco Jesús Gámiz Pérez, Carlos Navarro Moral
  • Development of a Multisubband Monte Carlo Simulator for Nanometric Transistors
    Author: Cristina Medina Bailón
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2017-02-02
    Supervision: Carlos Sampedro Matarín, Francisco Jesús Gámiz Pérez
    Special mention: internacional
  • Electrical Characterization of Reliability in Advanced Silicon-On-Insulator Structures for sub-22nm Technologies
    Author: Carlos Márquez González
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2017-03-23
    Supervision: Noel Rodríguez Santiago, Francisco Jesús Gámiz Pérez
    Special mention: internacional
  • Application of the Pseudo-MOSFET Technique on Silicon-On-Insulator Wafers
    Author: Cristina Fernández Sánchez
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2016-07-22
    Supervision: Noel Rodríguez Santiago, Francisco Jesús Gámiz Pérez
  • Design, simulation and electrical characterization of A2RAM memory cells
    Author: Carlos Navarro Moral
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2014-02-18
    Supervision: Noel Rodríguez Santiago, Francisco Jesús Gámiz Pérez
    Special mention: internacional
  • Study and Simulation of advanced Si-based Nanodevices: Schottky-Barrier MOSFETs and Tunnel FETs
    Author: Jose Luis Padilla de la Torre
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2012-10-26
    Supervision: Francisco Jesús Gámiz Pérez, Andrés Godoy Medina
    Special mention: internacional
  • Characterization, Modelling and Simulation Of decananometer Soi Mosfets
    Author: Noel Rodríguez Santiago
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2008-04-07
    Supervision: Francisco Jesús Gámiz Pérez
    Special mention: europea
  • Estudio, Caracterización y Simulación de Transistores con Modulación de la Velocidad en Silicio
    Author: Carlos Sampedro Matarín
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2006-12-18
    Supervision: Andrés Godoy Medina, Francisco Jesús Gámiz Pérez

Research visits

  • IMEP: INSTITUT DE MICROÉLECTRONIQUE, ELECTROMAGNÉTISME ET PHOTONIQUE
    Visiting researcher: Gámiz Pérez, Francisco Jesús
    Research group: TIC-216
    Place: GRENOBLE; FRANCIA
    Start date: 2008-06-22
    End date: 2008-07-07
    Visiting category: INV
  • INSTITUTE FOR MICROELECTRONICS. UNIVERSIDAD TECNICA DE VIENA
    Visiting researcher: Gámiz Pérez, Francisco Jesús
    Research group: TIC-216
    Place: VIENA; AUSTRIA
    Start date: 2000-03-13
    End date: 2000-03-26
    Visiting category: INV
  • IBM. T.J.WATSON RESEARCH CENTER. (YORKTOWN HEIGHTS, NEW YORK, U.S.A.)
    Visiting researcher: Gámiz Pérez, Francisco Jesús
    Research group: TIC-216
    Place: YORKTOWN HEIGHTS, NEW YORK; ESTADOS UNIDOS DE AMERICA
    Start date: 1999-09-01
    End date: 1999-12-31
    Visiting category: INV
  • INSTITUTE FOR MICROELECTRONICS. UNIVERSIDAD TECNICA DE VIENA
    Visiting researcher: Gámiz Pérez, Francisco Jesús
    Research group: TIC-216
    Place: VIENA, AUSTRIA; AUSTRIA
    Start date: 1998-12-12
    End date: 1998-12-19
    Visiting category: INV
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