Juan Antonio López Villanueva

Fotografía a baja resolución

Juan Antonio López Villanueva

Administrative data

Full member researcher

  • Position in UGR: Professor
    Department where s/he teaches: Electrónica y Tecnología de Computadores
    Research group: TIC-105

Contributions and research experience

Publications in ISI SCI

  • Hybrid Printed Device for Simultaneous Vapors Sensing
    Author-s: Rivadeneyra, Almudena; Fernandez-Salmeron, Jose; Agudo-Acemel, Manuel; Lopez-Villanueva, Juan A.; Fermin Capitan-Vallvey, Luis; Palma, Alberto J.
    Source: IEEE SENSORS JOURNAL 16 23 8501 8508 2016
  • Printed electrodes structures as capacitive humidity sensors: A comparison
    Author-s: Rivadeneyra, Almudena; Fernandez-Salmeron, Jose; Agudo-Acemel, Manuel; Lopez-Villanueva, Juan A.; Fermin Capitan-Vallvey, Luis; Palma, Alberto J.
    Source: SENSORS AND ACTUATORS A-PHYSICAL 244 56 65 2016
  • A printed capacitive-resistive double sensor for toluene and moisture sensing
    Author-s: Rivadeneyra, Almudena; Fernandez-Salmeron, Jose; Agudo-Acemel, Manuel; Lopez-Villanueva, Juan A.; Palma, Alberto J.; Fermin Capitan-Vallvey, Luis
    Source: SENSORS AND ACTUATORS B-CHEMICAL 210 542 549 2015
  • Space-charge and injection limited current in organic diodes: A unified model
    Author-s: Lopez Varo, P.; Jimenez Tejada, J. A.; Lopez Villanueva, J. A.; Deen, M. J.
    Source: ORGANIC ELECTRONICS 15 10 2526 2535 2014
  • Electrical characterization of controlled and unintentional modified metal-organic contacts
    Author-s: Lopez Varo, P.; Jimenez Tejada, J. A.; Lopez Villanueva, J. A.; Deen, M. J.
    Source: ORGANIC ELECTRONICS 15 10 2536 2545 2014
  • Design and characterization of a low thermal drift capacitive humidity sensor by inkjet-printing
    Author-s: Rivadeneyra, Almudena; Fernandez-Salmeron, Jose; Agudo, Manuel; Lopez-Villanueva, Juan A.; Fermin Capitan-Vallvey, Luis; Palma, Alberto J.
    Source: SENSORS AND ACTUATORS B-CHEMICAL 195 123 131 2014
  • Compact Modeling and Contact Effects in Thin Film Transistors
    Author-s: Jimenez Tejada, Juan Antonio; Lopez Villanueva, Juan Antonio; Lopez Varo, Pilar; Awawdeh, Karam M.; Deen, M. Jamal
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 61 2 266 277 2014
  • Characterization of organic thin film transistors with hysteresis and contact effects
    Author-s: Awawdeh, K. M.; Jimenez Tejada, J. A.; Lopez Varo, P.; Lopez Villanueva, J. A.; Gomez Campos, F. M.; Deen, M. J.
    Source: ORGANIC ELECTRONICS 14 12 3286 3296 2013
  • Modeling the transition from ohmic to space charge limited current in organic semiconductors
    Author-s: Lopez Varo, P.; Jimenez Tejada, J. A.; Lopez Villanueva, J. A.; Carceller, J. E.; Deen, M. J.
    Source: ORGANIC ELECTRONICS 13 9 1700 1709 2012
  • Influence of size and shape of InAs/GaAs quantum dots in the photophysics of regimented arrays
    Author-s: Luque-Rodriguez, A.; Rodriguez-Bolivar, S.; Lopez-Villanueva, J. A.; Gomez-Campos, F. M.
    Source: JOURNAL OF APPLIED PHYSICS 111 11 -1 -1 2012
  • Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors
    Author-s: Jimenez Tejada, Juan A.; Luque Rodriguez, Abraham; Godoy, Andres; Rodriguez-Bolivar, Salvador; Lopez Villanueva, Juan A.; Marinov, Ognian; Deen, M. Jamal
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 59 2 459 467 2012
  • Influence of the Number of Anchoring Groups on the Electronic and Mechanical Properties of Benzene-, Anthracene- and Pentacene-Based Molecular Devices
    Author-s: Martin-Lasanta, Ana; Miguel, Delia; Garcia, Trinidad; Lopez-Villanueva, Juan A.; Rodriguez-Bolivar, Salvador; Gomez-Campos, Francisco M.; Bunuel, Elena; Cardenas, Diego J.; Alvarez de Cienfuegos, Luis; Cuerva, Juan M.
    Source: CHEMPHYSCHEM 13 3 860 868 2012
  • Contact effects in compact models of organic thin film transistors: Application to zinc phthalocyanine-based transistors
    Author-s: Jimenez Tejada, J. A.; Awawdeh, K. M.; Lopez Villanueva, J. A.; Carceller, J. E.; Deen, M. J.; Chaure, N. B.; Basova, Tamara; Ray, A. K.
    Source: ORGANIC ELECTRONICS 12 5 832 842 2011
  • Miniband structure and photon absorption in regimented quantum dot systems
    Author-s: Rodriguez-Bolivar, S.; Gomez-Campos, F. M.; Luque-Rodriguez, A.; Lopez-Villanueva, J. A.; Jimenez-Tejada, J. A.; Carceller, J. E.
    Source: JOURNAL OF APPLIED PHYSICS 109 7 -1 -1 2011
  • A low-frequency noise model for four-gate field-effect transistors
    Author-s: Jimenez Tejada, Juan Antonio; Rodriguez, Abraham Luque; Godoy, Andres; Villanueva, Juan A. Lopez; Gomez-Campos, Francisco M.; Rodriguez-Bolivar, Salvador
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 55 3 896 903 2008
  • A solution of the effective-mass Schrodinger equation in general isotropic and nonparabolic bands for the study of two-dimensional carrier gases
    Author-s: Gomez-Campos, FM; Rodriguez-Bolivar, S; Lopez-Villanueva, JA; Jimenez-Tejada, JA; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 98 3 -1 -1 2005
  • A simple model for analysing the effects of band non-parabolicity in nanostructures
    Author-s: Lopez-Villanueva, JA; Jimenez-Tejada, JA; Palma, A; Bolivar, SR; Carceller, JE
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20 6 532 539 2005
  • Monte Carlo simulation of electron mobility in silicon-on-insulator structures
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Jimenez-Molinos, F
    Source: SOLID-STATE ELECTRONICS 46 11 1715 1721 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2002
  • Generation-recombination noise in highly asymmetrical p-n junctions
    Author-s: Tejada, JAJ; Godoy, A; Palma, A; Villanueva, JAL
    Source: JOURNAL OF APPLIED PHYSICS 92 1 320 329 2002
  • Electron transport in ultrathin double-gate SOI devices
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Jimenez-Molinos, F; Carceller, JE
    Source: MICROELECTRONIC ENGINEERING 59 1-4 423 427 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2001
  • Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P; Godoy, A
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 48 10 2447 2449 2001
  • Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
    Author-s: Jimenez-Molinos, F; Palma, A; Gamiz, F; Banqueri, J; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 90 7 3396 3404 2001
  • Special issue - Proceedings of the EUROSOI-2000 (European Meeting on Silicon-On-Insulator Devices) - Granada. Spain - 26-27 October 2000 - Foreword
    Author-s: Gamiz, F; Lopez-Villanueva, JA
    Source: SOLID-STATE ELECTRONICS 45 4 539 539 2001
  • Electron transport in silicon-on-insulator devices
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Carceller, JE; Cartujo, P; Jimenez-Molinos, F
    Source: SOLID-STATE ELECTRONICS 45 4 613 620 European Meeting on Silicon-on-Insulator Devices ( OCT 26-27, 2000 GRANADA, GRANADA 2001
  • A simple subthreshold swing model for short channel MOSFETs
    Author-s: Godoy, A; Lopez-Villanueva, JA; Jimenez-Tejada, JA; Palma, A; Gamiz, F
    Source: SOLID-STATE ELECTRONICS 45 3 391 397 2001
  • Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Cartujo-Cassinello, P; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF APPLIED PHYSICS 89 3 1764 1770 2001
  • Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo-Cassinello, P
    Source: IEEE ELECTRON DEVICE LETTERS 21 5 239 241 2000
  • The escape time of electrons from localised states
    Author-s: Gasparian, V; Villanueva, JAL
    Source: PHYSICA STATUS SOLIDI B-BASIC RESEARCH 218 1 299 302 8th International Conference on Hopping and Relate SEP 07-10, 1999 MURCIA, MURCIA 2000
  • Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects
    Author-s: Rodriguez, S; Lopez-Villanueva, JA; Cartujo, P; Carceller, JE
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 15 2 85 90 2000
  • Effects of the inversion-layer centroid on the performance of double-gate MOSFET!s
    Author-s: Lopez-Villanueva, JA; Cartujo-Cassinello, P; Gamiz, F; Banqueri, J; Palma, AJ
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 47 1 141 146 2000
  • Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Cartujo-Cassinello, P; Carceller, JE; Lopez-Villanueva, JA; Rodriguez, S
    Source: JOURNAL OF APPLIED PHYSICS 86 11 6269 6275 1999
  • Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory
    Author-s: Rodriguez, S; Lopez-Villanueva, JA; Melchor, I; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 86 1 438 444 1999
  • Experimental determination of the effective mobility in NMOSFETs: a comparative study
    Author-s: Banqueri, J; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Rodriguez, S; Carceller, JE
    Source: SOLID-STATE ELECTRONICS 43 4 701 707 1999
  • Energy dependence of the effective mass in the envelope-function approximation
    Author-s: Carpena, P; Villanueva, JAL; Gasparian, V
    Source: PHYSICA B 253 3-4 242 249 1998
  • A model for the drain current of deep submicrometer MOSFET!s including electron-velocity overshoot
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 10 2249 2251 1998
  • I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 8 P3 21 24 3rd European Workshop on Low Temperature Electroni JUN 24-26, 1998 SAN MINIATO, SAN MINIATO 1998
  • Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 8 P3 57 60 3rd European Workshop on Low Temperature Electroni JUN 24-26, 1998 SAN MINIATO, SAN MINIATO 1998
  • Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET!s
    Author-s: Gamiz, F; Lopez-Villanueva, JA; Roldan, JB; Carceller, JE; Cartujo, P
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 5 1122 1126 1998
  • Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 83 9 4802 4806 1998
  • An analytical model for the electron velocity overshoot effects in strained-Si on SixGe1-x MOSFET!s
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 4 993 995 1998
  • Understanding the improved performance of strained Si/Si1-xGex channel MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 12 1603 1608 1997
  • Effects of the inversion layer centroid on MOSFET behavior
    Author-s: LopezVillanueva, JA; CartujoCasinello, P; Banqueri, J; Gamiz, F; Rodriguez, S
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 11 1915 1922 1997
  • Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors
    Author-s: Godoy, A; Gamiz, F; Palma, A; JimenezTejada, JA; Banqueri, J; LopezVillanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 82 9 4621 4628 1997
  • Study of the effects of a stepped doping profile in short-channel MOSFET!s
    Author-s: LopezVillanueva, JA; Gamiz, F; Roldan, JB; Ghailan, Y; Carceller, JE; Cartujo, P
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 9 1425 1431 1997
  • A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFET!s
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 9 1447 1453 1997
  • A detailed simulation study of the performance of beta-silicon carbide MOSFETs and a comparison with their silicon counterparts
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 6 655 661 1997
  • Modeling effects of electron-velocity overshoot in a MOSFET
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 5 841 846 1997
  • The dependence of the electron mobility on the longitudinal electric field in MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE; Cartujo, P
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 3 321 330 1997
  • Electron transport properties of quantized silicon carbide inversion layers
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Cartujo, P
    Source: JOURNAL OF ELECTRONIC MATERIALS 26 3 203 207 38th Electronic Materials Conference (EMC) JUN 26-28, 1996 UNIV OF CALIF AT SANTA BARBARA, UNIV OF CALIF AT SANTA BARBARA, UNIV OF CALIF AT SANTA BARBARA 1997
  • Influence of the doping profile on electron mobility in a MOSFET
    Author-s: Gamiz, F; LopezVillanueva, JA; Roldan, JB; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 43 11 2023 2025 1996
  • A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1-xGex channel MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 80 9 5121 5128 1996
  • Electron velocity saturation in quantized silicon carbide inversion layers
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE
    Source: APPLIED PHYSICS LETTERS 69 15 2219 2221 1996
  • Electric field dependence of the electron capture cross section of neutral traps in SiO2
    Author-s: Palma, A; LopezVillanueva, JA; Carceller, JE
    Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY 143 8 2687 2690 1996
  • Semi-empirical model of electron mobility in MOSFETS in strong inversion regime
    Author-s: Banqueri, J; LopezVillanueva, J; Gamiz, F; Palma, A; Carceller, JE
    Source: IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS 143 4 202 206 1996
  • Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Cartujo, P
    Source: APPLIED PHYSICS LETTERS 69 6 797 799 1996
  • A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region
    Author-s: Banqueri, J; LopezVillanueva, JA; Gamiz, F; Carceller, JE; LoraTamayo, E; Lozano, M
    Source: SOLID-STATE ELECTRONICS 39 6 875 883 1996
  • Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 6 C3 13 18 2nd European Workshop on Low Temperature Electroni JUN 26-28, 1996 LOUVAIN, LOUVAIN 1996
  • Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE; Cartujo, P
    Source: JOURNAL DE PHYSIQUE IV 6 C3 87 92 2nd European Workshop on Low Temperature Electroni JUN 26-28, 1996 LOUVAIN, LOUVAIN 1996
  • INFLUENCE OF NEGATIVELY AND POSITIVELY CHARGED SCATTERING CENTERS ON ELECTRON-MOBILITY IN SEMICONDUCTOR INVERSION-LAYERS - A MONTE-CARLO STUDY
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA
    Source: JOURNAL OF APPLIED PHYSICS 78 3 1787 1792 1995
  • ELECTRON TRAPPING AND DETRAPPING IN NEAR-INTERFACIAL TRAPS DURING FOWLER-NORDHEIM TUNNELING INJECTION AT 77 K
    Author-s: LOPEZVILLANUEVA, JA; CARCELLER, JE; GAMIZ, F; BANQUERI, J
    Source: MICROELECTRONIC ENGINEERING 28 1-4 317 320 9th Biennial Conference on Insulating Films on Sem JUN 07-10, 1995 VILLARD DE LANS, VILLARD DE LANS 1995
  • INFLUENCE OF THE OXIDE-CHARGE DISTRIBUTION PROFILE ON ELECTRON-MOBILITY IN MOSFETS
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA; BANQUERI, J; CARCELLER, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 42 5 999 1004 1995
  • OXIDE CHARGE SPACE CORRELATION IN INVERSION-LAYERS .2. 3-DIMENSIONAL OXIDE CHARGE-DISTRIBUTION
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA; BANQUERI, J; GHAILAN, Y; CARCELLER, JE
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 10 5 592 600 1995
  • EFFECTS OF BULK-IMPURITY AND INTERFACE-CHARGE ON THE ELECTRON-MOBILITY IN MOSFETS
    Author-s: GAMIZ, F; BANQUERI, J; CARCELLER, JE; LOPEZVILLANUEVA, JA
    Source: SOLID-STATE ELECTRONICS 38 3 611 614 1995
  • COMPREHENSIVE MONTE-CARLO SIMULATION OF THE NONRADIATIVE CARRIER CAPTURE PROCESS BY IMPURITIES IN SEMICONDUCTORS
    Author-s: PALMA, A; JIMENEZTEJADA, JA; MELCHOR, I; LOPEZVILLANUEVA, JA; CARCELLER, JE
    Source: JOURNAL OF APPLIED PHYSICS 77 5 1998 2005 1995
  • UNIVERSALITY OF ELECTRON-MOBILITY CURVES IN MOSFETS - A MONTE-CARLO STUDY
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA; BANQUERI, J; CARCELLER, JE; CARTUJO, P
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 42 2 258 265 1995
  • A MODEL FOR THE QUANTIZED ACCUMULATION LAYER IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    Author-s: LOPEZVILLANUEVA, JA; MELCHOR, I; GAMIZ, F; BANQUERI, J; JIMENEZTEJADA, JA
    Source: SOLID-STATE ELECTRONICS 38 1 203 210 1995
  • EFFECTS OF OXIDE-CHARGE SPACE CORRELATION ON ELECTRON-MOBILITY IN INVERSION-LAYERS
    Author-s: GAMIZ, F; MELCHOR, I; PALMA, A; CARTUJO, P; LOPEZVILLANUEVA, JA
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 9 5 1102 1107 1994
  • INFLUENCE OF THE INTERFACE-STATE DENSITY ON THE ELECTRON-MOBILITY IN SILICON INVERSION-LAYERS
    Author-s: BANQUERI, J; GAMIZ, F; CARCELLER, JE; CARTUJO, P; LOPEZVILLANUEVA, JA
    Source: JOURNAL OF ELECTRONIC MATERIALS 22 9 1159 1163 1993
  • AN ANALYTICAL EXPRESSION FOR PHONON-LIMITED ELECTRON-MOBILITY IN SILICON-INVERSION LAYERS
    Author-s: GAMIZ, F; BANQUERI, J; MELCHOR, I; CARCELLER, JE; CARTUJO, P; LOPEZVILLANUEVA, JA
    Source: JOURNAL OF APPLIED PHYSICS 74 5 3289 3292 1993
  • A NONDESTRUCTIVE METHOD TO DETERMINE IMPURITY-PROFILES IN NONABRUPT P-N-JUNCTIONS WITH DEEP LEVELS
    Author-s: JIMENEZTEJADA, JA; LOPEZVILLANUEVA, JA; CARTUJO, P; CARCELLER, JE
    Source: SOLID-STATE ELECTRONICS 35 12 1729 1736 1992
  • IMPORTANCE OF THE CHOICE OF THE PROFILE MODEL FOR A P-N-JUNCTION IN THE LOCATION OF DEEP LEVELS
    Author-s: JIMENEZTEJADA, JA; LOPEZVILLANUEVA, JA; CARTUJO, P; VICENTE, J; CARCELLER, JE
    Source: JOURNAL OF ELECTRONIC MATERIALS 21 9 883 886 1992
  • A HIGH-FREQUENCY BIDIRECTIONAL CAPACITANCE METHOD TO STUDY THE EVOLUTION OF THE INTERFACE STATE DENSITY GENERATED AT LOW-TEMPERATURES
    Author-s: LOPEZVILLANUEVA, JA; JIMENEZTEJADA, JA; CARTUJO, P; BAUSELLS, J; CARCELLER, JE
    Source: SOLID-STATE ELECTRONICS 35 1 73 81 1992
  • ANALYSIS OF THE EFFECTS OF CONSTANT-CURRENT FOWLER-NORDHEIM-TUNNELING INJECTION WITH CHARGE TRAPPING INSIDE THE POTENTIAL BARRIER
    Author-s: LOPEZVILLANUEVA, JA; JIMENEZTEJADA, JA; CARTUJO, P; BAUSELLS, J; CARCELLER, JE
    Source: JOURNAL OF APPLIED PHYSICS 70 7 3712 3720 1991
  • ANALYSIS OF A REVERSE-BIASED LINEARLY GRADED JUNCTION WITH HIGH-CONCENTRATION OF DEEP IMPURITIES
    Author-s: LOPEZVILLANUEVA, JA; JIMENEZTEJADA, JA; CARTUJO, P; MORANTE, JR; CARCELLER, JE
    Source: SOLID-STATE ELECTRONICS 33 7 805 811 1990
  • Intraband photon absorption in edge-defined nanowire superlattices for optoelectronic applications
    Author-s: Gomez-Campos, F. M.; Rodriguez-Bolivar, S.; Luque-Rodriguez, A.; Lopez-Villanueva, J. A.; Carceller, J. E.
    Source: JOURNAL OF APPLIED PHYSICS 108 12 -1 -1 2010
  • Thermal drift reduction with multiple bias current for MOSFET dosimeters
    Author-s: Carvajal, M. A.; Martinez-Olmos, A.; Morales, D. P.; Lopez-Villanueva, J. A.; Lallena, A. M.; Palma, A. J.
    Source: PHYSICS IN MEDICINE AND BIOLOGY 56 12 3535 3550 2011
  • Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy
    Author-s: Tejada, Juan A. Jimenez; Bullejos, Pablo Lara; Villanueva, Juan A. Lopez; Gomez-Campos, Francisco M.; Rodriguez-Bolivar, Salvador; Deen, M. Jamal
    Source: APPLIED PHYSICS LETTERS 89 11 -1 -1 2006
  • Direct and trap-assisted elastic tunneling through ultrathin gate oxides
    Author-s: Jimenez-Molinos, F; Gamiz, F; Palma, A; Cartujo, P; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 91 8 5116 5124 2002
  • Effects of oxygen related defects on the electrical and thermal behavior of a n( )-p junction
    Author-s: Tejada, JAJ; Godoy, A; Carceller, JE; Villanueva, JAL
    Source: JOURNAL OF APPLIED PHYSICS 95 2 561 570 2004
  • Evaluation of a low-cost commercial mosfet as radiation dosimeter
    Author-s: Asensio, LJ; Carvajal, MA; Lopez-Villanueva, JA; Vilches, M; Lallena, AM; Palma, AJ
    Source: SENSORS AND ACTUATORS A-PHYSICAL 125 2 288 295 2006
  • Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 86 12 6854 6863 1999
  • EVOLUTION OF ELECTRICAL MAGNITUDES IN GRADUAL P-N-JUNCTIONS WITH DEEP LEVELS DURING THE EMISSION OF MAJORITY CARRIERS
    Author-s: JIMENEZTEJADA, JA; LOPEZVILLANUEVA, JA; CARTUJO, P; VICENTE, J; CARCELLER, JE
    Source: JOURNAL OF APPLIED PHYSICS 72 10 4946 4953 1992
  • Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
    Author-s: Palma, A; Godoy, A; JimenezTejada, JA; Carceller, JE; LopezVillanueva, JA
    Source: PHYSICAL REVIEW B 56 15 9565 9574 1997
  • Local Larmor clock approach to the escape time
    Author-s: Villanueva, JAL; Gasparian, V
    Source: PHYSICS LETTERS A 260 3-4 286 293 1999
  • MODIFIED SCHRODINGER-EQUATION INCLUDING NONPARABOLICITY FOR THE STUDY OF A 2-DIMENSIONAL ELECTRON-GAS
    Author-s: LOPEZVILLANUEVA, JA; MELCHOR, I; CARTUJO, P; CARCELLER, JE
    Source: PHYSICAL REVIEW B 48 3 1626 1631 1993
  • A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 81 10 6857 6865 1997
  • MONTE-CARLO STUDY OF THE STATISTICS OF ELECTRON-CAPTURE BY SHALLOW DONORS IN SILICON AT LOW-TEMPERATURES
    Author-s: PALMA, A; JIMENEZTEJADA, JA; GODOY, A; LOPEZVILLANUEVA, JA; CARCELLER, JE
    Source: PHYSICAL REVIEW B 51 20 14147 14151 1995
  • A COMPARISON OF MODELS FOR PHONON-SCATTERING IN SILICON INVERSION-LAYERS
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA
    Source: JOURNAL OF APPLIED PHYSICS 77 8 4128 4129 1995
  • DENSITY-OF-STATES OF A 2-DIMENSIONAL ELECTRON-GAS INCLUDING NONPARABOLICITY
    Author-s: LOPEZVILLANUEVA, JA; GAMIZ, F; MELCHOR, I; JIMENEZTEJADA, JA
    Source: JOURNAL OF APPLIED PHYSICS 75 8 4267 4269 1994
  • A COMPREHENSIVE MODEL FOR COULOMB SCATTERING IN INVERSION-LAYERS
    Author-s: GAMIZ, F; LOPEZVILLANUEVA, JA; JIMENEZTEJADA, JA; MELCHOR, I; PALMA, A
    Source: JOURNAL OF APPLIED PHYSICS 75 2 924 934 1994
  • Localization and quantification of noise sources in four-gate field-effect-transistors
    Author-s: Luque Rodriguez, A.; Jimenez Tejada, J. A.; Godoy, A.; Lopez Villanueva, J. A.; Gomez-Campos, F. M.; Rodriguez-Bolivar, S.
    Source: INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS 23 4-5 285 300 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2010
  • A computational study of the strained-Si MOSFET: a possible alternative for the next century electronics industry
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE; Cartujo, P
    Source: COMPUTER PHYSICS COMMUNICATIONS 121 547 549 Europhysics Conference on Computational Physics (C SEP 02-05, 1998 GRANADA, GRANADA 1999
  • Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 3 1538 1540 16th North American Conference on Molecular Beam E OCT 05-08, 1997 UNIV MICHIGAN, UNIV MICHIGAN, UNIV MICHIGAN 1998
  • Electron mobility in quantized beta-SiC inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 3 1631 1633 16th North American Conference on Molecular Beam E OCT 05-08, 1997 UNIV MICHIGAN, UNIV MICHIGAN, UNIV MICHIGAN 1998
  • Monte Carlo simulation of a submicron MOSFET including inversion layer quantization
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: VLSI DESIGN 6 1-4 287 290 4th International Workshop on Computational Electr OCT 31-NOV 01, 1995 TEMPE, TEMPE 1998

Conferences in ISI CPCI-Science

  • Influence of the Contact Effects on the Variation of the Trapped Charge in the Intrinsic Channel of Organic Thin Film Transistors
    Author-s: Awawdeh, K. M.; Jimenez Tejada, J. A.; Lopez Varo, P.; Lopez Villanueva, J. A.; Deen, M. J.
    Source: PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) 71 73 9th Spanish Conference on Electron Devices (CDE) FEB 12-14, 2013 Valladolid, Valladolid 2013
  • Absorption Coefficient in Periodic InAs/GaAs Nanostructures
    Author-s: Rodriguez-Bolivar, S.; Gomez-Campos, F. M.; Luque-Rodriguez, A.; Lopez-Villanueva, J. A.; Carceller, J. E.
    Source: QUANTUM DOTS 2010 245 -1 -1 Conference on Quantum Dots 2010 (QD2010) APR 26-30, 2010 Nottingham, Nottingham 2010
  • Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors
    Author-s: Luque Rodriguez, A.; Jimenez Tejada, J. A.; Lopez Villanueva, J. A.; Godoy, A.; Lara Bullejos, P.; Gomez-Campos, M.
    Source: NOISE AND FLUCTUATIONS 1129 585 588 20th International Conference on Noise and Fluctua JUN 14-19, 2009 Pisa, Pisa 2009
  • SIMULATION OF THE IMPACT OF DESIGN PARAMETERS ON THE EFFICIENCY OF CONCENTRATOR SYSTEMS WITH THE ISOSIM PACKAGE
    Author-s: Rodriguez Messmer, E.; Miguel-Sanchez, J.; Diaz, V.; Lopez Villanueva, J. A.
    Source: PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 379 382 33rd IEEE Photovoltaic Specialists Conference MAY 11-16, 2008 San Diego, San Diego 2008
  • Effects of oxygen-related traps in silicon on the generation-recombination noise
    Author-s: Tejada, JAJ; Villanueva, JAL; Godoy, A; Carceller, JE; Gomez-Campo, FM; Rodriguez-Bolivar, S
    Source: Noise and Fluctuations 780 717 720 18th International Conference on Noise and Fluctua SEP 19-23, 2005 Salamanca, Salamanca 2005
  • Monte Carlo simulation of electron mobility in double gate SOI-MOSFETs.
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE
    Source: PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES 97 23 233 238 8th International Symposium on Silicon-On-Insulato AUG 31-SEP 05, 1997 PARIS, PARIS 1997
  • Electric field dependence of the electron capture cross-section of neutral traps in SiO2 bulk
    Author-s: Palma, A; Lopez-Villanueva, JA; Carceller, JE
    Source: PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996 96 1 509 519 3rd International Symposium on the Physics and Che MAY 05-10, 1996 LOS ANGELES, LOS ANGELES 1996

Book chapters in ISI

  • Computational Study of InAs/GaAs Quantum Dot Arrays
    Author-s: Gomez-Campos, F. M.; Rodriguez-Bolivar, S.; Luque-Rodriguez, A.; Lopez-Villanueva, J. A.; Carceller, J. E.
    Source: 2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) 223 226 14th International Workshop on Computational Elect OCT 26-29, 2010 Pisa, Pisa 2010
  • Electronic properties of nanosize GNRs: the role of the anchoring groups
    Author-s: Alvarez de Cienfuegos, L.; Rodriguez-Bolivar, S.; Gomez Campos, F. M.; Garcia, T.; Lopez-Villanueva, J. A.; Carceller, J. E.; Martin-Lasanta, A.; Cuerva, J. M.; Bunuel, E.; Cardenas, Diego J.
    Source: 2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) 275 278 14th International Workshop on Computational Elect OCT 26-29, 2010 Pisa, Pisa 2010
  • Improvement of the k.p Approach for Describing Silicon Quantum Dots
    Author-s: Rodriguez-Bolivar, S.; Gomez-Campos, F. M.; Luque-Rodriguez, A.; Lopez-Villanueva, J. A.; Jimenez-Tejada, J. A.; Lara-Bullejos, P.; Carceller, J. E.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 124 127 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Effect of traps in the performance of Four Gate Transistors
    Author-s: Luque Rodriguez, A.; Jimenez Tejada, J. A.; Godoy, A.; Lopez Villanueva, J. A.; Gomez-Campos, F. M.; Rodriguez-Bolivar, S.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 132 135 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Computational study of a nanofuse based on organic molecules
    Author-s: Fuentes, Noelia; Parra, Andres; Oltra, Enrique; Cuerva, Juan M.; Rodriguez-Bolivar, S.; Gomez-Campos, F. M.; Lopez-Villanueva, J. A.; Carceller, J. E.; Bunuel, Elena; Cardenas, Diego J.
    Source: IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS 238 241 13th International Workshop on Computational Elect MAY 27-29, 2009 Beijing, Beijing 2009
  • 3D Animations Used for Teaching
    Author-s: Gomez-Campos, F. M.; Rodriguez-Bolivar, S.; Luque-Rodriguez, A.; Lopez-Villanueva, J. A.; Jimenez-Tejada, J. A.; Lara-Bullejos, P.; Carceller, J. E.
    Source: 2009 EAEEIE ANNUAL CONFERENCE 200 204 20th Annual Conference of the European-Association JUN 22-24, 2009 Valencia, Valencia 2009
  • Confinement in Quantum Wire Periodic Nanostructures
    Author-s: Rodriguez-Bolivar, S.; Gomez-Campos, F. M.; Luque-Rodriguez, A.; Lopez-Villanueva, J. A.; Carceller, J. E.
    Source: 2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) 707 709 9th IEEE Conference on Nanotechnology (IEEE-NANO) JUL 26-30, 2009 Genoa, Genoa 2009
  • Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy
    Author-s: Tejada, J. A. Jimenez; Deen, M. J.; Bullejos, P. Lara; Villanueva, J. A. Lopez; Gomez-Campos, F. M.; Rodriguez-Bolivar, S.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 139 142 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007
  • A multijunction solar cell simulation program for the development of concentration systems
    Author-s: Villanueva, J. A. Lopez; Diaz, V.; Bolivar, S. Rodriguez; Tejada, J. A. Jimenez; Rodriguez, E.
    Source: 2007 Spanish Conference on Electron Devices, Proceedings 262 265 6th Spanish Conference on Electron Devices JAN 31-FEB 02, 2007 Madrid, Madrid 2007

Doctoral Dissertations supervised

  • Diseño de sistemas multisensores para monitorización ambiental
    Author: Almudena Rivadeneyra Torres
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2014-07-11
    Supervision: Juan Antonio López Villanueva, Alberto José Palma López
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