Francisco Jiménez Molinos

Fotografía a baja resolución

Francisco Jiménez Molinos

Administrative data

Full member researcher

  • Position in UGR: Tenure professor
    Department where s/he teaches: Electrónica y Tecnología de Computadores
    Research group: TIC-216

Contributions and research experience

Publications in ISI SCI

  • Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model
    Author-s: Roldan, J. B.; Miranda, E.; Gonzalez-Cordero, G.; Garcia-Fernandez, P.; Romero-Zaliz, R.; Gonzalez-Rodelas, P.; Aguilera, A. M.; Gonzalez, M. B.; Jimenez-Molinos, F.
    Source: JOURNAL OF APPLIED PHYSICS 123 1 0 0 2018
  • : a physical model for RRAM devices simulation
    Author-s: Villena, Marco A.; Roldan, Juan B.; Jimenez-Molinos, Francisco; Miranda, Enrique; Sune, Jordi; Lanza, Mario
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 16 4 1095 1120 2017
  • A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n(+)-based RRAMs
    Author-s: Aldana, S.; Garcia-Fernandez, P.; Rodriguez-Fernandez, Alberto; Romero-Zaliz, R.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Gomez-Campos, F.; Roldan, J. B.
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 33 0 0 2017
  • Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n(+)-Si RRAM Devices
    Author-s: Rodriguez-Fernandez, Alberto; Aldana, Samuel; Campabadal, Francesca; Sune, Jordi; Miranda, Enrique; Jimenez-Molinos, Francisco; Roldan, Juan Bautista; Gonzalez, Mireia Bargallo
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 64 8 3159 3166 2017
  • A physically based model for resistive memories including a detailed temperature and variability description
    Author-s: Gonzalez-Cordero, G.; Gonzalez, M. B.; Garcia, H.; Campabadal, F.; Duenas, S.; Castan, H.; Jimenez-Molinos, F.; Roldan, J. B.
    Source: MICROELECTRONIC ENGINEERING 178 26 29 20th Meeting on Insulating Films on Semiconductors JUN 27-30, 2017 Potsdam, GERMANY 2017
  • A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n(+)-based RRAMs
    Author-s: Villena, M. A.; Roldan, J. B.; Gonzalez, M. B.; Gonzalez-Rodelas, P.; Jimenez-Molinos, F.; Campabadal, F.; Barrera, D.
    Source: SOLID-STATE ELECTRONICS 118 56 60 2016
  • Simulation of thermal reset transitions in resistive switching memories including quantum effects
    Author-s: Villena, M. A.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.; Sune, J.; Romera, E.; Miranda, E.
    Source: JOURNAL OF APPLIED PHYSICS 115 21 -1 -1 2014
  • An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
    Author-s: Roldan, J. B.; Jimenez-Molinos, F.; Balaguer, M.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 79 92 97 2013
  • An Analytical I-V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
    Author-s: Roldan, J. B.; Gamiz, Francisco; Jimenez-Molinos, F.; Sampedro, Carlos; Godoy, Andres; Garcia Ruiz, Francisco J.; Rodriguez, Noel
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 11 2925 2933 2010
  • An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETs
    Author-s: Jimenez-Molinos, F.; Roldan, J. B.; Balaguer, M.; Gamiz, F.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 25 5 -1 -1 2010
  • Hole transport in DGSOI devices: Orientation and silicon thickness effects
    Author-s: Donetti, L.; Gamiz, F.; Rodriguez, N.; Jimenez-Molinos, F.; Roldan, J. B.
    Source: SOLID-STATE ELECTRONICS 54 2 191 195 5th Workshop of the Thematic-Network-on-Silicon-on JAN 19-21, 2009 Chalmers Univ Technol, Chalmers Univ Technol, Chalmers Univ Technol 2010
  • Monte Carlo simulation of nanoelectronic devices
    Author-s: Gamiz, F.; Godoy, A.; Donetti, L.; Sampedro, C.; Roldan, J. B.; Ruiz, F.; Tienda, I.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 8 3-4 174 191 2009
  • Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices
    Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 6 1-3 41 44 2007
  • Image and exchange-correlation effects in double gate silicon-on-insulator transistors
    Author-s: Gamiz, F; Cartujo-Cassinello, P; Jimenez-Molinos, F; Carceller, JE; Cartujo, P
    Source: MICROELECTRONIC ENGINEERING 72 1-4 374 378 13th Biennial Conference on Insulating Films on Se JUN 18-20, 2003 Barcelona, Barcelona 2004
  • Monte Carlo simulation of electron mobility in silicon-on-insulator structures
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Jimenez-Molinos, F
    Source: SOLID-STATE ELECTRONICS 46 11 1715 1721 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2002
  • Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
    Author-s: Gamiz, F; Cartujo-Cassinello, P; Roldan, JB; Jimenez-Molinos, F
    Source: JOURNAL OF APPLIED PHYSICS 92 1 288 295 2002
  • Electron transport in ultrathin double-gate SOI devices
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Jimenez-Molinos, F; Carceller, JE
    Source: MICROELECTRONIC ENGINEERING 59 1-4 423 427 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2001
  • Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
    Author-s: Jimenez-Molinos, F; Palma, A; Gamiz, F; Banqueri, J; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 90 7 3396 3404 2001
  • Electron transport in silicon-on-insulator devices
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Carceller, JE; Cartujo, P; Jimenez-Molinos, F
    Source: SOLID-STATE ELECTRONICS 45 4 613 620 European Meeting on Silicon-on-Insulator Devices ( OCT 26-27, 2000 GRANADA, GRANADA 2001
  • An in-depth simulation study of thermal reset transitions in resistive switching memories
    Author-s: Villena, M. A.; Jimenez-Molinos, F.; Roldan, J. B.; Sune, J.; Long, S.; Lian, X.; Gamiz, F.; Liu, M.
    Source: JOURNAL OF APPLIED PHYSICS 114 14 -1 -1 2013
  • A comprehensive analysis on progressive reset transitions in RRAMs
    Author-s: Villena, M. A.; Roldan, J. B.; Jimenez-Molinos, F.; Sune, J.; Long, S.; Miranda, E.; Liu, M.
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS 47 20 -1 -1 2014
  • Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers
    Author-s: Gamiz, F; Cartujo-Cassinello, P; Jimenez-Molinos, F; Carceller, JE; Cartujo, P
    Source: APPLIED PHYSICS LETTERS 83 15 3120 3122 2003
  • Coulomb scattering in high-kappa gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors
    Author-s: Jimenez-Molinos, F.; Gamiz, F.; Donetti, L.
    Source: JOURNAL OF APPLIED PHYSICS 104 6 -1 -1 2008
  • Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Jimenez-Molinos, F; Roldan, JB; Cartujo-Cassinello, P
    Source: APPLIED PHYSICS LETTERS 80 20 3835 3837 2002
  • Direct and trap-assisted elastic tunneling through ultrathin gate oxides
    Author-s: Jimenez-Molinos, F; Gamiz, F; Palma, A; Cartujo, P; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 91 8 5116 5124 2002
  • Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
    Author-s: Donetti, L; Gamiz, F; Rodriguez, N; Jimenez, F; Sampedro, C
    Source: APPLIED PHYSICS LETTERS 88 12 -1 -1 2006
  • Effects of the extension of conductive filaments, a simulation approach
    Author-s: Villena, Marco A.; Roldan, Juan B.; Garcia-Fernandez, Pedro; Jimenez-Molinos, Francisco
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 35 1 0 0 2017
  • In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
    Author-s: Gonzalez-Cordero, Gerardo; Jimenez-Molinos, Francisco; Bautista Roldan, Juan; Bargallo Gonzalez, Mireia; Campabadal, Francesca
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 35 1 0 0 2017
  • Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices
    Author-s: Gehring, A; Jimenez-Molinos, F; Kosina, H; Palma, A; Gamiz, F; Selberherr, S
    Source: MICROELECTRONICS RELIABILITY 43 9-11 1495 1500 14th European Symposium on Raliability of Electron OCT 07-10, 2003 BORDEAUX, BORDEAUX 2003

Conferences in ISI CPCI-Science

  • A Physically Based Model to describe Resistive Switching in different RRAM technologies
    Author-s: Gonzalez-Cordero, G.; Gonzalez, M. B.; Garcia, H.; Campabadal, F.; Duenas, S.; Castan, H.; Jimenez-Molinos, F.; Roldan, J. B.
    Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
  • SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes
    Author-s: Jimenez-Molinos, F.; Gonzalez-Cordero, G.; Cartujo-Cassinello, P.; Roldan, J. B.
    Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
  • SPICE simulation of RRAM circuits. A compact modeling perspective
    Author-s: Gonzalez-Cordero, G.; Roldan, J. B.; Jimenez-Molinos, F.
    Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
  • Ultrathin n-Channel and p-Channel SOI MOSFETs
    Author-s: Gamiz, F.; Donetti, L.; Sampedro, C.; Godoy, A.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: SEMICONDUCTOR-ON-INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONS 169 185 2011

Book chapters in ISI

  • Double Gate Silicon-on-Insulator transistors: n( )-n( ) gate versus n( )-p( ) gate configuration
    Author-s: Gamiz, F; Roldan, JB; Godoy, J; Jimenez-Molinos, F; Cartujo-Cassinello, G
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 353 356 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • Double gate silicon-on-insulator transistors: n( )-n( ) gate versus n( )-p( ) gate configuration.
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Jimenez-Molinos, F
    Source: ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 173 176 34th European Solid-State Device Research Conferen SEP 21-23, 2004 Leuven, Leuven 2004
  • Remote surface roughness scattering in ultrathin-oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Jimenez-Molinos, F; Cartujo-Cassinello, P; Roldan, JB
    Source: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 403 406 33rd European Solid-State Device Research Conferen SEP 16-18, 2003 ESTORIL, ESTORIL 2003

Doctoral Dissertations supervised

  • Estudio, modelado y simulación de memorias RRAM
    Author: Marco Antonio Villena Sánchez
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2015-07-17
    Supervision: Juan Bautista Roldán Aranda, Francisco Jiménez Molinos

Research visits

  • INSTITUTO DE MICROELECTRÓNICA, ELECTROMAGNETISMO Y FOTÓNICA (IMEP) DE GRENOBLE.
    Visiting researcher: Jiménez Molinos, Francisco
    Research group: TIC-216
    Place: GRENOBLE; FRANCIA
    Start date: 2006-11-13
    End date: 2006-12-14
    Visiting category: INV
  • INSTITUTO DE MICROELECTRÓNICA DE LA UNIVERSIDAD TÉCNICA DE VIENA
    Visiting researcher: Jiménez Molinos, Francisco
    Research group: TIC-216
    Place: VIENA; AUSTRIA
    Start date: 2001-09-24
    End date: 2001-11-24
Histórico de banners
23 Hoy lunes
abril2018
Anterior Siguiente
L
M
X
J
V
S
D
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
PRÓXIMOS EVENTOS

    • No hay próximos eventos programados

© Universidad de Granada

Calle Periodista Rafael Gómez Montero, número 2 · E-18071 GRANADA (Spain) · +34-958241720

Diseño Web Granada

Oficina Web UGR