Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model
Author-s: Roldan, J. B.; Miranda, E.; Gonzalez-Cordero, G.; Garcia-Fernandez, P.; Romero-Zaliz, R.; Gonzalez-Rodelas, P.; Aguilera, A. M.; Gonzalez, M. B.; Jimenez-Molinos, F.
Source: JOURNAL OF APPLIED PHYSICS 123 1 0 0 2018
: a physical model for RRAM devices simulation
Author-s: Villena, Marco A.; Roldan, Juan B.; Jimenez-Molinos, Francisco; Miranda, Enrique; Sune, Jordi; Lanza, Mario
Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 16 4 1095 1120 2017
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n(+)-based RRAMs
Author-s: Aldana, S.; Garcia-Fernandez, P.; Rodriguez-Fernandez, Alberto; Romero-Zaliz, R.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Gomez-Campos, F.; Roldan, J. B.
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 33 0 0 2017
Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n(+)-Si RRAM Devices
Author-s: Rodriguez-Fernandez, Alberto; Aldana, Samuel; Campabadal, Francesca; Sune, Jordi; Miranda, Enrique; Jimenez-Molinos, Francisco; Roldan, Juan Bautista; Gonzalez, Mireia Bargallo
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 64 8 3159 3166 2017
A physically based model for resistive memories including a detailed temperature and variability description
Author-s: Gonzalez-Cordero, G.; Gonzalez, M. B.; Garcia, H.; Campabadal, F.; Duenas, S.; Castan, H.; Jimenez-Molinos, F.; Roldan, J. B.
Source: MICROELECTRONIC ENGINEERING 178 26 29 20th Meeting on Insulating Films on Semiconductors JUN 27-30, 2017 Potsdam, GERMANY 2017
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n(+)-based RRAMs
Author-s: Villena, M. A.; Roldan, J. B.; Gonzalez, M. B.; Gonzalez-Rodelas, P.; Jimenez-Molinos, F.; Campabadal, F.; Barrera, D.
Source: SOLID-STATE ELECTRONICS 118 56 60 2016
Simulation of thermal reset transitions in resistive switching memories including quantum effects
Author-s: Villena, M. A.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.; Sune, J.; Romera, E.; Miranda, E.
Source: JOURNAL OF APPLIED PHYSICS 115 21 -1 -1 2014
An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
Author-s: Roldan, J. B.; Jimenez-Molinos, F.; Balaguer, M.; Gamiz, F.
Source: SOLID-STATE ELECTRONICS 79 92 97 2013
An Analytical I-V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
Author-s: Roldan, J. B.; Gamiz, Francisco; Jimenez-Molinos, F.; Sampedro, Carlos; Godoy, Andres; Garcia Ruiz, Francisco J.; Rodriguez, Noel
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 11 2925 2933 2010
An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETs
Author-s: Jimenez-Molinos, F.; Roldan, J. B.; Balaguer, M.; Gamiz, F.
Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 25 5 -1 -1 2010
Hole transport in DGSOI devices: Orientation and silicon thickness effects
Author-s: Donetti, L.; Gamiz, F.; Rodriguez, N.; Jimenez-Molinos, F.; Roldan, J. B.
Source: SOLID-STATE ELECTRONICS 54 2 191 195 5th Workshop of the Thematic-Network-on-Silicon-on JAN 19-21, 2009 Chalmers Univ Technol, Chalmers Univ Technol, Chalmers Univ Technol 2010
Monte Carlo simulation of nanoelectronic devices
Author-s: Gamiz, F.; Godoy, A.; Donetti, L.; Sampedro, C.; Roldan, J. B.; Ruiz, F.; Tienda, I.; Rodriguez, N.; Jimenez-Molinos, F.
Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 8 3-4 174 191 2009
Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices
Author-s: Sampedro, C.; Gamiz, F.; Godoy, A.; Jimenez-Molinos, F.
Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 6 1-3 41 44 2007
Image and exchange-correlation effects in double gate silicon-on-insulator transistors
Author-s: Gamiz, F; Cartujo-Cassinello, P; Jimenez-Molinos, F; Carceller, JE; Cartujo, P
Source: MICROELECTRONIC ENGINEERING 72 1-4 374 378 13th Biennial Conference on Insulating Films on Se JUN 18-20, 2003 Barcelona, Barcelona 2004
Monte Carlo simulation of electron mobility in silicon-on-insulator structures
Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Jimenez-Molinos, F
Source: SOLID-STATE ELECTRONICS 46 11 1715 1721 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2002
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
Author-s: Gamiz, F; Cartujo-Cassinello, P; Roldan, JB; Jimenez-Molinos, F
Source: JOURNAL OF APPLIED PHYSICS 92 1 288 295 2002
Electron transport in ultrathin double-gate SOI devices
Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Jimenez-Molinos, F; Carceller, JE
Source: MICROELECTRONIC ENGINEERING 59 1-4 423 427 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2001
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
Effects of the extension of conductive filaments, a simulation approach
Author-s: Villena, Marco A.; Roldan, Juan B.; Garcia-Fernandez, Pedro; Jimenez-Molinos, Francisco
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 35 1 0 0 2017
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
A Physically Based Model to describe Resistive Switching in different RRAM technologies
Author-s: Gonzalez-Cordero, G.; Gonzalez, M. B.; Garcia, H.; Campabadal, F.; Duenas, S.; Castan, H.; Jimenez-Molinos, F.; Roldan, J. B.
Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes
Author-s: Jimenez-Molinos, F.; Gonzalez-Cordero, G.; Cartujo-Cassinello, P.; Roldan, J. B.
Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
SPICE simulation of RRAM circuits. A compact modeling perspective
Author-s: Gonzalez-Cordero, G.; Roldan, J. B.; Jimenez-Molinos, F.
Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
Author-s: Gamiz, F; Roldan, JB; Godoy, A; Jimenez-Molinos, F
Source: ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 173 176 34th European Solid-State Device Research Conferen SEP 21-23, 2004 Leuven, Leuven 2004
Remote surface roughness scattering in ultrathin-oxide MOSFETs
Author-s: Gamiz, F; Godoy, A; Jimenez-Molinos, F; Cartujo-Cassinello, P; Roldan, JB
Source: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 403 406 33rd European Solid-State Device Research Conferen SEP 16-18, 2003 ESTORIL, ESTORIL 2003
Author: Marco Antonio Villena Sánchez
Institution: Electrónica y Tecnología de Computadores (UGR),
Dissertation date: 2015-07-17
Supervision: Juan Bautista Roldán Aranda, Francisco Jiménez Molinos
INSTITUTO DE MICROELECTRÓNICA, ELECTROMAGNETISMO Y FOTÓNICA (IMEP) DE GRENOBLE.
Visiting researcher: Jiménez Molinos, Francisco
Research group: TIC-216
Place: GRENOBLE; FRANCIA
Start date: 2006-11-13
End date: 2006-12-14
Visiting category: INV
INSTITUTO DE MICROELECTRÓNICA DE LA UNIVERSIDAD TÉCNICA DE VIENA
Visiting researcher: Jiménez Molinos, Francisco
Research group: TIC-216
Place: VIENA; AUSTRIA
Start date: 2001-09-24
End date: 2001-11-24