Juan Bautista Roldán Aranda

Fotografía a baja resolución

Juan Bautista Roldán Aranda

Administrative data

Full member researcher

  • Position in UGR: Tenure professor
    Department where s/he teaches: Electrónica y Tecnología de Computadores
    Research group: TIC-216

Contributions and research experience

Publications in ISI SCI

  • A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n(+)-based RRAMs
    Author-s: Aldana, S.; Garcia-Fernandez, P.; Rodriguez-Fernandez, Alberto; Romero-Zaliz, R.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Gomez-Campos, F.; Roldan, J. B.
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 33 0 0 2017
  • Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n(+)-Si RRAM Devices
    Author-s: Rodriguez-Fernandez, Alberto; Aldana, Samuel; Campabadal, Francesca; Sune, Jordi; Miranda, Enrique; Jimenez-Molinos, Francisco; Roldan, Juan Bautista; Gonzalez, Mireia Bargallo
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 64 8 3159 3166 2017
  • Polynomial pattern finding in scattered data
    Author-s: Barrera, D.; Ibanez, M. J.; Roldan, A. M.; Roldan, J. B.; Yanez, R.
    Source: JOURNAL OF COMPUTATIONAL AND APPLIED MATHEMATICS 318 107 116 2017
  • A physically based model for resistive memories including a detailed temperature and variability description
    Author-s: Gonzalez-Cordero, G.; Gonzalez, M. B.; Garcia, H.; Campabadal, F.; Duenas, S.; Castan, H.; Jimenez-Molinos, F.; Roldan, J. B.
    Source: MICROELECTRONIC ENGINEERING 178 26 29 20th Meeting on Insulating Films on Semiconductors JUN 27-30, 2017 Potsdam, GERMANY 2017
  • Revivals of electron currents and topological-band insulator transitions in 2D gapped Dirac materials
    Author-s: Romera, E.; Bolivar, J. C.; Roldan, J. B.; de los Santos, F.
    Source: EPL 115 2 2016
  • A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n(+)-based RRAMs
    Author-s: Villena, M. A.; Roldan, J. B.; Gonzalez, M. B.; Gonzalez-Rodelas, P.; Jimenez-Molinos, F.; Campabadal, F.; Barrera, D.
    Source: SOLID-STATE ELECTRONICS 118 56 60 2016
  • A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse
    Author-s: Blanco-Filgueira, Beatriz; Lopez Martinez, Paula; Roldan Aranda, Juan Bautista
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 63 1 16 25 2016
  • An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors
    Author-s: Gonzalez, P.; Ibanez, M. J.; Roldan, A. M.; Roldan, J. B.
    Source: MATHEMATICS AND COMPUTERS IN SIMULATION 118 248 2015
  • An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
    Author-s: Villena, M. A.; Gonzalez, M. B.; Roldan, J. B.; Campabadal, F.; Jimenez-Molinos, F.; Gomez-Campos, F. M.; Sune, J.
    Source: SOLID-STATE ELECTRONICS 111 47 2015
  • A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners
    Author-s: Moreno, E.; Villada, M. P.; Ruiz, F. G.; Roldan, J. B.; Marin, E. G.
    Source: SOLID-STATE ELECTRONICS 111 180 2015
  • Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors
    Author-s: Picos, Rodrigo; Roldan, Juan Bautista; Al Chawa, Mohamed Moner; Garcia-Fernandez, Pedro; Jimenez-Molinos, Francisco; Garcia-Moreno, Eugeni
    Source: RADIOENGINEERING 24 2 424 10 2015
  • DC self-heating effects modelling in SOI and bulk FinFETs
    Author-s: Gonzalez, B.; Roldan, J. B.; Iniguez, B.; Lazaro, A.; Cerdeira, A.
    Source: MICROELECTRONICS JOURNAL 46 4 10 2015
  • A SPICE Compact Model for Unipolar RRAM Reset Process Analysis
    Author-s: Jimenez-Molinos, Francisco; Villena, Marco A.; Roldan, Juan B.; Roldan, Andres M.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 62 3 10 2015
  • Analytical Model for Crosstalk in p-n(well) Photodiodes
    Author-s: Blanco-Filgueira, Beatriz; Lopez Martinez, Paula; Roldan Aranda, Juan Bautista; Hauer, Johann
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 62 2 10 2015
  • A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines
    Author-s: Ibanez, M. J.; Roldan, J. B.; Roldan, A. M.; Yanez, R.
    Source: MATHEMATICS AND COMPUTERS IN SIMULATION 102 1 10 2014
  • Zitterbewegung in monolayer silicene in a magnetic field
    Author-s: Romera, E.; Roldan, J. B.; de los Santos, F.
    Source: PHYSICS LETTERS A 378 34 2582 2585 2014
  • Simulation of thermal reset transitions in resistive switching memories including quantum effects
    Author-s: Villena, M. A.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.; Sune, J.; Romera, E.; Miranda, E.
    Source: JOURNAL OF APPLIED PHYSICS 115 21 -1 -1 2014
  • On the Numerical Modeling of Terahertz Photoconductive Antennas
    Author-s: Moreno, E.; Pantoja, M. F.; Ruiz, F. G.; Roldan, J. B.; Garcia, S. G.
    Source: JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES 35 5 432 444 2014
  • Pseudo-Boltzmann model for modeling the junctionless transistors
    Author-s: Avila-Herrera, F.; Cerdeira, A.; Roldan, J. B.; Sanchez-Moreno, P.; Tienda-Luna, I. M.; Iniguez, B.
    Source: SOLID-STATE ELECTRONICS 95 19 22 2014
  • An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal-oxide-semiconductor integration
    Author-s: Roldan, A.; Roldan, J. B.; Reig, C.; Cardoso, S.; Cardoso, F.; Ferreira, R.; Freitas, P. P.
    Source: JOURNAL OF APPLIED PHYSICS 115 17 -1 -1 2014
  • An analytical mobility model for square Gate-All-Around MOSFETs
    Author-s: Tienda-Luna, I. M.; Roldan, J. B.; Ruiz, F. G.; Blanque, C. M.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 90 18 22 8th EUROSOI Workshop JAN, 2012 Montpellier, Montpellier 2013
  • Closed-Form and Explicit Analytical Model for Crosstalk in CMOS Photodiodes
    Author-s: Blanco-Filgueira, Beatriz; Lopez, Paula; Bautista Roldan, Juan
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 60 10 3459 3464 2013
  • Experimental characterization of peripheral photocurrent in CMOS photodiodes down to 65 nm technology
    Author-s: Blanco-Filgueira, B.; Lopez, P.; Roldan, J. B.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28 4 -1 -1 2013
  • An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
    Author-s: Roldan, J. B.; Jimenez-Molinos, F.; Balaguer, M.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 79 92 97 2013
  • In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs
    Author-s: Roldan, J. B.; Gonzalez, B.; Iniguez, B.; Roldan, A. M.; Lazaro, A.; Cerdeira, A.
    Source: SOLID-STATE ELECTRONICS 79 179 184 2013
  • A Verilog-AMS photodiode model including lateral effects
    Author-s: Blanco-Filgueira, B.; Lopez, P.; Roldan, J. B.
    Source: MICROELECTRONICS JOURNAL 43 12 980 984 2012
  • Analytical modelling of size effects on the lateral photoresponse of CMOS photodiodes
    Author-s: Blanco-Filgueira, B.; Lopez, P.; Roldan, Juan B.
    Source: SOLID-STATE ELECTRONICS 73 15 20 2012
  • Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
    Author-s: Balaguer, M.; Roldan, J. B.; Donetti, L.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 67 1 30 37 2012
  • In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic Orientations
    Author-s: Balaguer, Maria; Roldan Aranda, Juan Bautista; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 12 4438 4441 2011
  • An analytical compact model for Schottky-barrier double gate MOSFETs
    Author-s: Balaguer, M.; Iniguez, B.; Roldan, J. B.
    Source: SOLID-STATE ELECTRONICS 64 1 78 84 2011
  • Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs
    Author-s: Cheralathan, M.; Sampedro, C.; Roldan, J. B.; Gamiz, F.; Iannaccone, G.; Sangiorgi, E.; Iniguez, B.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26 9 -1 -1 2011
  • An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs
    Author-s: Moreno Perez, Enrique; Roldan Aranda, Juan Bautista; Garcia Ruiz, Francisco J.; Barrera Rosillo, Domingo; Ibanez Perez, Maria Jose; Godoy, Andres; Gamiz, Francisco
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 58 9 2854 2861 2011
  • A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation
    Author-s: Roldan, Andres M.; Roldan, Juan B.; Reig, Candid; Cubells-Beltran, M. -D.; Ramirez, Diego; Cardoso, Susana; Freitas, Paulo P.
    Source: MICROELECTRONICS JOURNAL 42 2 365 370 2011
  • Analytical compact modeling of GMR based current sensors Application to power measurement at the IC level
    Author-s: Roldan, A.; Reig, C.; Cubells-Beltran, M. D.; Roldan, J. B.; Ramirez, D.; Cardoso, S.; Freitas, P. P.
    Source: SOLID-STATE ELECTRONICS 54 12 1606 1612 2010
  • An analytical model for square GAA MOSFETs including quantum effects
    Author-s: Moreno, E.; Roldan, J. B.; Ruiz, F. G.; Barrera, D.; Godoy, A.; Gamiz, F.
    Source: SOLID-STATE ELECTRONICS 54 11 1463 1469 2010
  • An Analytical I-V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
    Author-s: Roldan, J. B.; Gamiz, Francisco; Jimenez-Molinos, F.; Sampedro, Carlos; Godoy, Andres; Garcia Ruiz, Francisco J.; Rodriguez, Noel
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 57 11 2925 2933 2010
  • An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETs
    Author-s: Jimenez-Molinos, F.; Roldan, J. B.; Balaguer, M.; Gamiz, F.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 25 5 -1 -1 2010
  • Hole transport in DGSOI devices: Orientation and silicon thickness effects
    Author-s: Donetti, L.; Gamiz, F.; Rodriguez, N.; Jimenez-Molinos, F.; Roldan, J. B.
    Source: SOLID-STATE ELECTRONICS 54 2 191 195 5th Workshop of the Thematic-Network-on-Silicon-on JAN 19-21, 2009 Chalmers Univ Technol, Chalmers Univ Technol, Chalmers Univ Technol 2010
  • Monte Carlo simulation of nanoelectronic devices
    Author-s: Gamiz, F.; Godoy, A.; Donetti, L.; Sampedro, C.; Roldan, J. B.; Ruiz, F.; Tienda, I.; Rodriguez, N.; Jimenez-Molinos, F.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 8 3-4 174 191 2009
  • Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
    Author-s: Roldan, J. B.; Godoy, Andres; Gamiz, Francisco; Balaguer, M.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 55 1 411 416 2008
  • Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide MOSFET behavior: The influence of crystallographic orientation
    Author-s: Rodriguez, Noel; Gamiz, Francisco; Roldan, Juan B.
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 4 723 732 2007
  • An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms
    Author-s: Rodriguez, N.; Roldan, J. B.; Gamiz, F.
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 22 4 348 353 2007
  • Confined acoustic phonons in ultrathin SOI layers
    Author-s: Donetti, L.; Gamiz, F.; Roldan, J. B.; Godoy, A.
    Source: JOURNAL OF COMPUTATIONAL ELECTRONICS 5 2-3 199 203 2006
  • Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
    Author-s: Donetti, L.; Gamiz, F.; Roldan, J. B.; Godoy, A.
    Source: JOURNAL OF APPLIED PHYSICS 100 1 -1 -1 2006
  • Characterization of electron transport at high fields in silicon-on-insulator devices: a Monte Carlo study
    Author-s: Roldan, JB; Gamiz, I; Roldan, A; Rodriguez, N
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21 1 81 86 2006
  • Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs
    Author-s: Roldan, JB; Gamiz, F
    Source: SOLID-STATE ELECTRONICS 48 8 1347 1355 2004
  • Double gate silicon on insulator transistors. A Monte Carlo study
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Carceller, JE; Cartujo, P
    Source: SOLID-STATE ELECTRONICS 48 6 937 945 2004
  • Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Roldan, JB; Carceller, JE; Cartujo, P
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 18 11 927 937 2003
  • Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Cartujo-Cassinello, P; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 94 9 5732 5741 2003
  • Scattering of electrons in silicon inversion layers by remote surface roughness
    Author-s: Gamiz, F; Roldan, JB
    Source: JOURNAL OF APPLIED PHYSICS 94 1 392 399 2003
  • Strained-Si on Si1-xGex MOSFET mobility model
    Author-s: Roldan, JB; Gamiz, F; Cartujo-Cassinello, R; Cartujo, P; Carceller, JE; Roldan, A
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 50 5 1408 1411 2003
  • Monte Carlo simulation of electron mobility in silicon-on-insulator structures
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Jimenez-Molinos, F
    Source: SOLID-STATE ELECTRONICS 46 11 1715 1721 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2002
  • Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
    Author-s: Gamiz, F; Cartujo-Cassinello, P; Roldan, JB; Jimenez-Molinos, F
    Source: JOURNAL OF APPLIED PHYSICS 92 1 288 295 2002
  • Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility
    Author-s: Gamiz, F; Roldan, JB; Godoy, A
    Source: APPLIED PHYSICS LETTERS 80 22 4160 4162 2002
  • Electron transport in ultrathin double-gate SOI devices
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Jimenez-Molinos, F; Carceller, JE
    Source: MICROELECTRONIC ENGINEERING 59 1-4 423 427 12th Biennial Conference on Insulating Films on Se JUN 20-23, 2001 UDINE, UDINE 2001
  • Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P; Godoy, A
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 48 10 2447 2449 2001
  • Improving strained-Si on Si1-xGex deep submicron MOSFETs performance by means of a stepped doping profile
    Author-s: Gamiz, F; Roldan, JB; Kosina, H; Grasser, T
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 48 9 1878 1884 2001
  • Electron transport in silicon-on-insulator devices
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Carceller, JE; Cartujo, P; Jimenez-Molinos, F
    Source: SOLID-STATE ELECTRONICS 45 4 613 620 European Meeting on Silicon-on-Insulator Devices ( OCT 26-27, 2000 GRANADA, GRANADA 2001
  • Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Cartujo-Cassinello, P; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF APPLIED PHYSICS 89 3 1764 1770 2001
  • Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo-Cassinello, P
    Source: IEEE ELECTRON DEVICE LETTERS 21 5 239 241 2000
  • Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Cartujo-Cassinello, P; Carceller, JE; Lopez-Villanueva, JA; Rodriguez, S
    Source: JOURNAL OF APPLIED PHYSICS 86 11 6269 6275 1999
  • A model for the drain current of deep submicrometer MOSFET!s including electron-velocity overshoot
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 10 2249 2251 1998
  • I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 8 P3 21 24 3rd European Workshop on Low Temperature Electroni JUN 24-26, 1998 SAN MINIATO, SAN MINIATO 1998
  • Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 8 P3 57 60 3rd European Workshop on Low Temperature Electroni JUN 24-26, 1998 SAN MINIATO, SAN MINIATO 1998
  • Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET!s
    Author-s: Gamiz, F; Lopez-Villanueva, JA; Roldan, JB; Carceller, JE; Cartujo, P
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 5 1122 1126 1998
  • Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 83 9 4802 4806 1998
  • An analytical model for the electron velocity overshoot effects in strained-Si on SixGe1-x MOSFET!s
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 45 4 993 995 1998
  • Understanding the improved performance of strained Si/Si1-xGex channel MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 12 1603 1608 1997
  • Study of the effects of a stepped doping profile in short-channel MOSFET!s
    Author-s: LopezVillanueva, JA; Gamiz, F; Roldan, JB; Ghailan, Y; Carceller, JE; Cartujo, P
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 9 1425 1431 1997
  • A closed-loop evaluation and validation of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFET!s
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 9 1447 1453 1997
  • A detailed simulation study of the performance of beta-silicon carbide MOSFETs and a comparison with their silicon counterparts
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 6 655 661 1997
  • Modeling effects of electron-velocity overshoot in a MOSFET
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 44 5 841 846 1997
  • The dependence of the electron mobility on the longitudinal electric field in MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE; Cartujo, P
    Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 12 3 321 330 1997
  • Electron transport properties of quantized silicon carbide inversion layers
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Cartujo, P
    Source: JOURNAL OF ELECTRONIC MATERIALS 26 3 203 207 38th Electronic Materials Conference (EMC) JUN 26-28, 1996 UNIV OF CALIF AT SANTA BARBARA, UNIV OF CALIF AT SANTA BARBARA, UNIV OF CALIF AT SANTA BARBARA 1997
  • Influence of the doping profile on electron mobility in a MOSFET
    Author-s: Gamiz, F; LopezVillanueva, JA; Roldan, JB; Carceller, JE
    Source: IEEE TRANSACTIONS ON ELECTRON DEVICES 43 11 2023 2025 1996
  • A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1-xGex channel MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 80 9 5121 5128 1996
  • Electron velocity saturation in quantized silicon carbide inversion layers
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE
    Source: APPLIED PHYSICS LETTERS 69 15 2219 2221 1996
  • Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Cartujo, P
    Source: APPLIED PHYSICS LETTERS 69 6 797 799 1996
  • Low-temperature modelling of electron-velocity-overshoot effects on 70-250 nm gate-length MOSFETs
    Author-s: Roldan, JB; Gamiz, F; LopezVillanueva, JA; Carceller, JE
    Source: JOURNAL DE PHYSIQUE IV 6 C3 13 18 2nd European Workshop on Low Temperature Electroni JUN 26-28, 1996 LOUVAIN, LOUVAIN 1996
  • Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE; Cartujo, P
    Source: JOURNAL DE PHYSIQUE IV 6 C3 87 92 2nd European Workshop on Low Temperature Electroni JUN 26-28, 1996 LOUVAIN, LOUVAIN 1996
  • An in-depth simulation study of thermal reset transitions in resistive switching memories
    Author-s: Villena, M. A.; Jimenez-Molinos, F.; Roldan, J. B.; Sune, J.; Long, S.; Lian, X.; Gamiz, F.; Liu, M.
    Source: JOURNAL OF APPLIED PHYSICS 114 14 -1 -1 2013
  • A comprehensive analysis on progressive reset transitions in RRAMs
    Author-s: Villena, M. A.; Roldan, J. B.; Jimenez-Molinos, F.; Sune, J.; Long, S.; Miranda, E.; Liu, M.
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS 47 20 -1 -1 2014
  • Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Jimenez-Molinos, F; Roldan, JB; Cartujo-Cassinello, P
    Source: APPLIED PHYSICS LETTERS 80 20 3835 3837 2002
  • Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors
    Author-s: Gamiz, F; Roldan, JB; Carceller, JE; Cartujo, P
    Source: APPLIED PHYSICS LETTERS 82 19 3251 3253 2003
  • Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo-Cassinello, P; Carceller, JE
    Source: JOURNAL OF APPLIED PHYSICS 86 12 6854 6863 1999
  • A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA
    Source: JOURNAL OF APPLIED PHYSICS 81 10 6857 6865 1997
  • Effects of the extension of conductive filaments, a simulation approach
    Author-s: Villena, Marco A.; Roldan, Juan B.; Garcia-Fernandez, Pedro; Jimenez-Molinos, Francisco
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 35 1 0 0 2017
  • In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
    Author-s: Gonzalez-Cordero, Gerardo; Jimenez-Molinos, Francisco; Bautista Roldan, Juan; Bargallo Gonzalez, Mireia; Campabadal, Francesca
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 35 1 0 0 2017
  • A computational study of the strained-Si MOSFET: a possible alternative for the next century electronics industry
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE; Cartujo, P
    Source: COMPUTER PHYSICS COMMUNICATIONS 121 547 549 Europhysics Conference on Computational Physics (C SEP 02-05, 1998 GRANADA, GRANADA 1999
  • Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 3 1538 1540 16th North American Conference on Molecular Beam E OCT 05-08, 1997 UNIV MICHIGAN, UNIV MICHIGAN, UNIV MICHIGAN 1998
  • Electron mobility in quantized beta-SiC inversion layers
    Author-s: Gamiz, F; Roldan, JB; Lopez-Villanueva, JA; Cartujo, P
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 3 1631 1633 16th North American Conference on Molecular Beam E OCT 05-08, 1997 UNIV MICHIGAN, UNIV MICHIGAN, UNIV MICHIGAN 1998
  • Monte Carlo simulation of a submicron MOSFET including inversion layer quantization
    Author-s: Roldan, JB; Gamiz, F; Lopez-Villanueva, JA; Carceller, JE
    Source: VLSI DESIGN 6 1-4 287 290 4th International Workshop on Computational Electr OCT 31-NOV 01, 1995 TEMPE, TEMPE 1998

Conferences in ISI CPCI-Science

  • A Physically Based Model to describe Resistive Switching in different RRAM technologies
    Author-s: Gonzalez-Cordero, G.; Gonzalez, M. B.; Garcia, H.; Campabadal, F.; Duenas, S.; Castan, H.; Jimenez-Molinos, F.; Roldan, J. B.
    Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
  • SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes
    Author-s: Jimenez-Molinos, F.; Gonzalez-Cordero, G.; Cartujo-Cassinello, P.; Roldan, J. B.
    Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
  • SPICE simulation of RRAM circuits. A compact modeling perspective
    Author-s: Gonzalez-Cordero, G.; Roldan, J. B.; Jimenez-Molinos, F.
    Source: 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) 0 0 Spanish Conference on Electron Devices (CDE) FEB 08-10, 2017 Barcelona, SPAIN 2017
  • On the simulation of carrier dynamics in terahertz photoconductive antennas
    Author-s: Moreno, E.; Pantoja, M. F.; Garcia, S. G.; Roldan, J. B.; Ruiz, F. G.; Bretones, A. R.; Martin, R. G.
    Source: 2013 7TH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION (EUCAP) 749 750 7th European Conference on Antennas and Propagatio APR 08-12, 2013 Gothenburg, Gothenburg 2013
  • Evidence of the lateral collection significance in small CMOS photodiodes
    Author-s: Blanco-Filgueira, B.; Lopez, P.; Doege, J.; Suarez, M.; Roldan, J. B.
    Source: 2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) -1 -1 IEEE International Symposium on Circuits and Syste MAY 20-23, 2012 Seoul, Seoul 2012
  • Electron transport in silicon inversion slabs of nanometric thickness
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Sampedro, C
    Source: Nanotechnology II 5838 199 207 Conference on Nanotechnology II MAY 09-11, 2005 Seville, Seville 2005
  • Monte Carlo simulation of electron mobility in double gate SOI-MOSFETs.
    Author-s: Gamiz, F; Roldan, JB; LopezVillanueva, JA; Carceller, JE
    Source: PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES 97 23 233 238 8th International Symposium on Silicon-On-Insulato AUG 31-SEP 05, 1997 PARIS, PARIS 1997

Book chapters in ISI

  • A new inversion charge centroid model for surrounding gate transistors with HfO(2) as gate insulator
    Author-s: Balaguer, M.; Roldan, J. B.; Tienda-Luna, I. M.; Ruiz, F. G.; Godoy, A.; Gamiz, F.; Sampedro, C.
    Source: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 104 107 7th Spanish Conference on Electron Devices FEB 11-13, 2009 Univ Santiago de Compostelea, Univ Santiago de Compostelea, Univ Santiago de Compostelea 2009
  • Double Gate Silicon-on-Insulator transistors: n( )-n( ) gate versus n( )-p( ) gate configuration
    Author-s: Gamiz, F; Roldan, JB; Godoy, J; Jimenez-Molinos, F; Cartujo-Cassinello, G
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 353 356 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • SPICE BSIMSOI enhancement to account for velocity overshoot
    Author-s: Roldan, A; Roldan, JB; Gamiz, F
    Source: 2005 Spanish Conference on Electron Devices, Proceedings 401 404 5th Spanish Conference on Electron Devices FEB 02-04, 2005 Tarragona, Tarragona 2005
  • Double gate silicon-on-insulator transistors: n( )-n( ) gate versus n( )-p( ) gate configuration.
    Author-s: Gamiz, F; Roldan, JB; Godoy, A; Jimenez-Molinos, F
    Source: ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 173 176 34th European Solid-State Device Research Conferen SEP 21-23, 2004 Leuven, Leuven 2004
  • A new remote Coulomb scattering model for ultrathin oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Roldan, JB
    Source: 2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 47 50 IEEE International Conference on Simulation of Sem SEP 03-05, 2003 BOSTON, BOSTON 2003
  • Remote surface roughness scattering in ultrathin-oxide MOSFETs
    Author-s: Gamiz, F; Godoy, A; Jimenez-Molinos, F; Cartujo-Cassinello, P; Roldan, JB
    Source: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE 403 406 33rd European Solid-State Device Research Conferen SEP 16-18, 2003 ESTORIL, ESTORIL 2003

Regional Projects

  • Modelado compacto para la caracterización termoeléctrica de dispositivos electrónicos nanométricos de última generación orientado al diseño de circuitos de baja potencia y RF
    Principal Investigator: Juan Bautista Roldán Aranda
    Reference: P08-TIC-03580
    Start date: 2009-01-13
    End date: 2013-12-31
    Research Group: TIC-216
    Amount to UGR: 50750.00
    Funding Agency: Consejería de Economía, Innovación y Ciencia, J.A.
    Program: Proyectos de Excelencia: Promoción general del conocimiento
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Research Contracts through OTRI

  • OTRI-3002
    Principal Investigator: Juan Bautista Roldán Aranda
    Start date: 2011-06-20
    End date: 2011-08-19
    Research Group: TIC-216
    Company: Desarrollos y Proyectos Mafer Electronics, S.L.U. (Mafero Electronics)
  • OTRI-2840
    Principal Investigator: Juan Bautista Roldán Aranda
    Start date: 2010-04-01
    End date: 2010-06-01
    Research Group: TIC-216
    Company: varias
  • OTRI-2629
    Principal Investigator: Juan Bautista Roldán Aranda
    Start date: 2008-09-20
    End date: 2009-02-19
    Research Group: TIC-216
    Company: varias

Doctoral Dissertations supervised

  • Estudio, modelado y simulación de memorias RRAM
    Author: Marco Antonio Villena Sánchez
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2015-07-17
    Supervision: Juan Bautista Roldán Aranda, Francisco Jiménez Molinos
  • Simulación de circuitos basada en la implementación de modelos avanzados de dispositivos y sensores electrónicos en Verilog-A.
    Author: Andrés María Roldán Aranda
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2012-04-26
    Supervision: Juan Bautista Roldán Aranda, Cándid Reig Escrivá
  • Advanced modeling of nanoscale multigate transistors for circuit simulation
    Author: María Balaguer Jiménez
    Institution: Electrónica y Tecnología de Computadores (UGR),
    Dissertation date: 2012-09-06
    Supervision: Juan Bautista Roldán Aranda

Research visits

  • TECHNICAL UNIVERSITY OF WIEN
    Visiting researcher: Roldán Aranda, Juan Bautista
    Research group: TIC-216
    Place: VIENA; AUSTRIA
    Start date: 2000-03-03
    End date: 2000-03-08
    Visiting category: INV
  • TECHNICAL UNIVERSITY OF WIEN
    Visiting researcher: Roldán Aranda, Juan Bautista
    Research group: TIC-216
    Place: VIENA; AUSTRIA
    Start date: 1998-06-10
    End date: 1998-06-16
    Visiting category: INV
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